University of Birmingham Orientational selective growth of single-atomic-layer gold nano-sheet via van der Waals interlocking and octanethiolate-confined molecular channels

Xin Zhang,Jianzhi Gao,Yitao Wang,Haoxuan Ding,Xuhui Qin,H. Bai,Tiantian Zhao,G. Zhu,Hongbing Lu,Zhibo Yang,Haiping Lin,Qing Li,L. Chi,M. Pan,Q. Guo

2019-01-01

Abstract:.

What problem does this paper attempt to address?

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Xiuju Song,Junfeng Gao,Yufeng Nie,Teng Gao,Jingyu Sun,Donglin Ma,Qiucheng Li,Yubin Chen,Chuanhong Jin,Alicja Bachmatiuk,Mark H. Rümmeli,Feng Ding,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-015-0816-9

IF: 9.9

2015-01-01

Nano Research

Abstract:Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 µm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.
Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Zhepeng Zhang,Xujing Ji,Jianping Shi,Xiebo Zhou,Shuai Zhang,Yue Hou,Yue Qi,Qiyi Fang,Qingqing Ji,Yu Zhang,Min Hong,Pengfei Yang,Xinfeng Liu,Qing Zhang,Lei Liao,Chuanhong Jin,Zhongfan Liu,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.7b01537

IF: 17.1

2017-01-01

ACS Nano

Abstract:Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au ...
Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

jun yin,xiaofei liu,wanglin lu,jidong li,yuanzhi cao,yao li,ying xu,xuemei li,jun zhou,chuanhong jin,wanlin guo

DOI: https://doi.org/10.1002/smll.201501439

IF: 13.3

2015-01-01

Small

Abstract:A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.
Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Zhihong Zhang,Linwei Zhou,Zhaoxi Chen,Antonin Jaros,Miroslav Kolibal,Petr Babor,Quanzhen Zhang,Changlin Yan,Ruixi Qiao,Qing Zhang,Teng Zhang,Wei,Yi Cui,Jingsi Qiao,Liwei Liu,Lihong Bao,Haitao Yang,Zhihai Cheng,Yeliang Wang,Enge Wang,Zhi Liu,Marc Willinger,Hong-Jun Gao,Kaihui Liu,Wei Ji,Zhu-Jun Wang

DOI: https://doi.org/10.1016/j.nantod.2024.102482

IF: 17.4

2024-01-01

Nano Today

Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by proximity catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This proximity catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.
Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions

Ruichun Luo,Wen Wu Xu,Yongzheng Zhang,Ziqian Wang,Xiaodong Wang,Yi Gao,Pan Liu,Mingwei Chen

DOI: https://doi.org/10.1038/s41467-020-14753-8

IF: 16.6

2020-02-21

Nature Communications

Abstract:Abstract The structures and properties of van der Waals (vdW) heterojunctions between semiconducting two-dimensional transition-metal dichalcogenides (2D TMDs) and conductive metals, such as gold, significantly influence the performances of 2D-TMD based electronic devices. Chemical vapor deposition is one of the most promising approaches for large-scale synthesis and fabrication of 2D TMD electronics with naturally formed TMD/metal vdW interfaces. However, the structure and chemistry of the vdW interfaces are less known. Here we report the interfacial reconstruction between TMD monolayers and gold substrates. The participation of sulfur leads to the reconstruction of Au {001} surface with the formation of a metastable Au 4 S 4 interfacial phase which is stabilized by the top MoS 2 and WS 2 monolayers. Moreover, the enhanced vdW interaction between the reconstructed Au 4 S 4 interfacial phase and TMD monolayers results in the transition from n-type TMD-Au Schottky contact to p-type one with reduced energy barrier height.

multidisciplinary sciences
Orientational Epitaxy of Van Der Waals Molecular Heterostructures

Lu'an Guo,Yitao Wang,Dogan Kaya,Richard E. Palmer,Guangde Chen,Quanmin Guo

DOI: https://doi.org/10.1021/acs.nanolett.8b02238

IF: 10.8

2018-01-01

Nano Letters

Abstract:The shape of individual building blocks is an important parameter in bottom-up self-assembly of nanostructured materials. A simple shape change from sphere to spheroid can significantly affect the assembly process due to the modification to the orientational degrees of freedom. When a layer of spheres is placed upon a layer of spheroids, the strain at the interface can be minimized by the spheroid taking a special orientation. C70 fullerenes represent the smallest spheroids, and their interaction with a sphere-like C60 is investigated. We find that the orientation of the C70 within a close-packed C70 layer can be steered by contacting a layer of C60. This orientational steering phenomenon is potentially useful for epitaxial growth of multilayer van der Waals molecular heterostructures.
Atomistic Mechanisms of Orientation and Temperature Dependence in Gold-Catalyzed Silicon Growth

Yanming Wang,Adriano Santana,Wei Cai

DOI: https://doi.org/10.1063/1.4991362

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:Gold-catalyzed vapor-liquid-solid (VLS) growth is widely used in the synthesis of silicon-based low-dimensional nano-structures. However, its growth mechanisms are not fully understood yet. In this paper, we systematically study the orientation and temperature dependences in the VLS process, by means of long molecular dynamics (MD) simulations up to 100 ns using an MEAM potential that well reproduces the binary phase diagram. The crystal growth velocities are extracted from the simulations under various conditions for 〈110〉 and 〈111〉 orientations, respectively. Our data suggest a linear dependence of the growth velocity on the Si supersaturation for 〈110〉 growth, in contrast to a non-linear dependence for 〈111〉 growth. By analyzing the surface morphologies, this difference is linked to the continuous growth mechanism on the {110} substrate and the island nucleation controlled growth on the {111} substrate. Furthermore, we find that the 〈111〉 growth in our MD simulations operates in the regime where the nucleation rate is higher than the island expansion rate. This is traced to the formation of a gold saturated monolayer above the nucleated Si island, impeding its further growth. Also, it is found that the atom activity near the {111} interface is lower, explaining the smaller growth velocity of the {111} surface than that of the {110} surface.
Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Zhihong Zhang,Linwei Zhou,Zhaoxi Chen,Antonín Jaroš,Miroslav Kolíbal,Petr Bábor,Quanzhen Zhang,Changlin Yan,Ruixi Qiao,Qing Zhang,Teng Zhang,Wei Wei,Yi Cui,Jingsi Qiao,Liwei Liu,Lihong Bao,Haitao Yang,Zhihai Cheng,Yeliang Wang,Enge Wang,Zhi Liu,Marc Willinger,Hong-Jun Gao,Kaihui Liu,Zhu-Jun Wang,Wei Ji

DOI: https://doi.org/10.48550/arXiv.2205.01468

2022-05-03

Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

Materials Science,Mesoscale and Nanoscale Physics
Structure and bonding issues at the interface between gold and self-assembled conjugated dithiol monolayers.

Weirong Jiang,Nikolai Zhitenev,Zhenan Bao,Hong Meng,David Abusch-Magder,Don Tennant,Eric Garfunkel

DOI: https://doi.org/10.1021/la0474316

IF: 3.9

2005-01-01

Langmuir

Abstract:Organic thiols have received extensive attention recently because of their relative stability and ease of examination compared to other potential molecular electronic materials. In this work, scanning probe microscopy (SPM) is used to study (i) the structural properties of self-assembled monolayers (SAMs) containing conjugated dithiols and (ii) the formation of the upper molecule-metal interface on dithiol SAMs. The top gold film is deposited either by thermal evaporation or by nano-transfer printing (nTP). Generally, the utility of thermal evaporation is limited because of Au diffusion through the SAMs. However, several dithiol SAMs are identified in this work that bond well to Au overlayers and act as satisfactory diffusion barriers. Coassembly of conjugated dithiols and alkanemonothiols is suggested as a route to obtain dithiols that are denser packed and more vertical (than is obtained from pure dithiol routes). High-yield nTP is demonstrated on coassembled SAMs. Advantages and limitations of different Au deposition and transfer techniques are compared on a variety of length scales.
Precision engineering of nano-assemblies in superfluid helium by the use of van der Waals forces

Gokhan Topcu,Aula M A Al Hindawi,Cheng Feng,Daniel Spence,Berlian Sitorus,Hanqing Liu,Andrew M Ellis,Shengfu Yang

DOI: https://doi.org/10.1038/s42004-024-01203-5

2024-06-04

Abstract:The ability to precisely engineer nanostructures underpins a wide range of applications in areas such as electronics, optics, and biomedical sciences. Here we present a novel approach for the growth of nanoparticle assemblies that leverages the unique properties of superfluid helium. Unlike viscous solvents at or near room temperature, superfluid helium provides an unperturbed and cold environment in which weak van der Waals interactions between molecular templates and metal atoms become significant and can define the spatial arrangement of nanoparticles. To demonstrate this concept, diol and porphyrin-based molecules are employed as templates to grow gold nanoparticle assemblies in superfluid helium droplets. After soft-landing on a solid surface to remove the helium, transmission electron microscopy (TEM) imaging shows the growth of gold nanoparticles at specific binding sites within the molecular templates where the interaction between gold atoms and the molecular template is at its strongest.
Direct growth of single-chiral-angle tungsten disulfide nanotubes using gold nanoparticle catalysts

Qinwei An,Wenqi Xiong,Feng Hu,Yikang Yu,Pengfei Lv,Siqi Hu,Xuetao Gan,Xiaobo He,Jianlin Zhao,Shengjun Yuan

DOI: https://doi.org/10.1038/s41563-023-01590-5

IF: 41.2

2023-07-15

Nature Materials

Abstract:Transition metal dichalcogenide (TMD) nanotubes offer a unique platform to explore the properties of TMD materials at the one-dimensional limit. Despite considerable efforts thus far, the direct growth of TMD nanotubes with controllable chirality remains challenging. Here we demonstrate the direct and facile growth of high-quality WS 2 and WSe 2 nanotubes on Si substrates using catalytic chemical vapour deposition with Au nanoparticles. The Au nanoparticles provide unique accommodation sites for the nucleation of WS 2 or WSe 2 shells on their surfaces and seed the subsequent growth of nanotubes. We find that the growth mode of nanotubes is sensitive to the temperature. With careful temperature control, we realize ~79% WS 2 nanotubes with single chiral angles, with a preference of 30° (~37%) and 0° (~12%). Moreover, we demonstrate how the geometric, electronic and optical properties of the synthesized WS 2 nanotubes can be modulated by the chirality. We anticipate that this approach using Au nanoparticles as catalysts will facilitate the growth of TMD nanotubes with controllable chirality and promote the study of their interesting properties and applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Dynamics of Antimonene–Graphene Van Der Waals Growth

Matthieu Fortin‐Deschênes,Robert M. Jacobberger,Charles‐Antoine Deslauriers,Olga Waller,Étienne Bouthillier,Michael S. Arnold,Oussama Moutanabbir

DOI: https://doi.org/10.1002/adma.201900569

IF: 29.4

2019-04-10

Advanced Materials

Abstract:Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low‐energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self‐limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll‐like islands with thicker, well‐defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large‐scale integration.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Twin-Assisted Growth of Nominally Stable Substrates Underneath Dewetted Au Nanoparticles

Fang Liu,Dong Yue Xie,Tahereh Majdi,Guo-zhen Zhu

DOI: https://doi.org/10.1016/j.matchar.2016.01.005

IF: 4.537

2016-01-01

Materials Characterization

Abstract:By applying a simple and inexpensive thermal treatment, we synthesized supported gold-oxide nanostructures, which have potential applications to plasmonic devices and biosensors. The regrowth of nominally stable substrates under gold nanoparticles is associated with the appearance of preferential orientations of dewetted nanoparticles and the formation of atomically sharp interfacial monolayers. Steps present at the interfacial monolayer usually occur at defects including the intersection points of twin planes at the interface. They were related to the nucleation and immigration of the interfacial monolayers, prompting the substrate regrowth. Accordingly, we proposed the twin-assisted growth mechanism, which provides insight on the synthesis of gold-oxide nanostructures.
In-situ self-assembly growth of controllable gold nanoparticles film

Yanan Liao,Kai Liu,Qingyi Zhang,Chengwei Wang,Rui Wang,Ying Yang,Feng Chen

DOI: https://doi.org/10.1016/j.jcrysgro.2024.127751

IF: 1.8

2024-05-13

Journal of Crystal Growth

Abstract:Because of the strong light absorption and/or scattering, nano scaled gold has many favorable optic and electric properties. With the continuous miniaturization of nano photoelectronic devices and nano electromechanical systems, there is an urgent demand for controllable and tailored gold nanoparticles film with excellent performance. Here, a modified HAuCl 4 -NaOH-CTAB (cetyltrimethylammonium bromide) aqueous solution system was utilized to self-assembly synthesize gold nanofilm on glass substrates. The high concentration NaOH is not only reducing Au 3+ to Au 0 , but facilitating interfacial assembly of gold nanostructure at liquid–solid interface via etching glass surface. Based on this growth kinetic, the gradient, well-designed and in-situ growing gold nanoparticles film can be achieved on any SiO 2 contained substrates by controlling the growth time in the reaction system. Furthermore, the in-situ self-assembled gold nanoparticles film can be act as plasmon substrates for surface-enhanced Raman scattering (SERS) or plasmonic enhanced semiconductor lasing, even gold electrodes.

materials science, multidisciplinary,physics, applied,crystallography
Trace water mediated growth of oriented single-crystalline mesoporous metal-organic frameworks on gold nanorods.

Zehao Zhou,Mengyuan Li,Jian Zhao,Zhenghan Di,Chunzhi Di,Bei Liu,Chao Zhang,Chun-Hua Yan,Lele Li

DOI: https://doi.org/10.1039/c8cc04147d

IF: 4.9

2018-01-01

Chemical Communications

Abstract:Here we report, for the first time, the growth of single-crystalline mesoporous MOFs with well-controlled orientation on the surface of gold nanorods. Importantly, it showed that trace amounts of water could induce the formation of MOFs of different phases and shapes, which was critical for the synthesis of such mesoporous heterostructures.
Oriented attachment interfaces of zeolitic imidazolate framework nanocrystals

Xiaocang Han,Rui Su,Wenqian Chen,Qi Han,Yuan Tian,Jiuhui Han,Xiaodong Wang,Shuangxi Song,Kolan Madhav Reddy,Hexiang Deng,Pan Liu,Mingwei Chen

DOI: https://doi.org/10.1039/d3nr00702b

IF: 6.7

2023-01-01

Nanoscale

Abstract:The molecular-scale interfacial defects and hence the micromechanism of the oriented attachment growth of ZIF crystals were revealed by low-dose Cs-corrected HRTEM.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Growth and In-Plane Undulations of GaAs/Ge Superlattices on [001]-Oriented Ge and GaAs Substrates: Formation of Regular 3D Island-in-network Nanostructures

Hongfei Liu,Yunjiang Jin,Ming Lin,Shifeng Guo,Anna Marie Yong,Surani Bin Dolmanan,S. Tripathy,Xizu Wang

DOI: https://doi.org/10.1039/c8tc04799e

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:Coherently strained pseudo-superlattices (PSLs) of 20-period GaAs/Ge have been epitaxially grown on [001]-oriented Ge and GaAs substrates by metalorganic chemical vapor deposition.
Effect of Interfacial Structure on Gold-assisted Growth of Oxides

Xin Li,Wei Zhou,Fang Liu,Guo-zhen Zhu

DOI: https://doi.org/10.1017/s143192761500940x

IF: 4.0991

2015-01-01

Microscopy and Microanalysis

Abstract:Journal Article Effect of Interfacial Structure on Gold-assisted Growth of Oxides Get access Xin Li, Xin Li State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Wei Zhou, Wei Zhou State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Fang Liu, Fang Liu State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Guo-zhen Zhu Guo-zhen Zhu State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 21, Issue S3, 1 August 2015, Pages 1725–1726, https://doi.org/10.1017/S143192761500940X Published: 23 September 2015
Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

Luca Bignardi,Daniel Lizzit,Harsh Bana,Elisabetta Travaglia,Paolo Lacovig,Charlotte E. Sanders,Maciej Dendzik,Matteo Michiardi,Marco Bianchi,Moritz Ewert,Lars Buß,Jens Falta,Jan Ingo Flege,Alessandro Baraldi,Rosanna Larciprete,Philip Hofmann,Silvano Lizzit

DOI: https://doi.org/10.1103/PhysRevMaterials.3.014003

2018-09-20

Abstract:We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.

Materials Science,Mesoscale and Nanoscale Physics
Gold Nanobelt Reorientation By Molecular Dynamics Simulation

ChunFang Zhang,Helin Wei,Jian Wang,Zuli Liu

DOI: https://doi.org/10.1088/0256-307X/24/8/020

2007-01-01

Chinese Physics Letters

Abstract:The embedded atom method is used to study the structure stability of gold nanobelt. The Au nanobelts have a rectangular cross-section with 100 orientation along x-, y- and z-axes. Free surfaces are used along the different temperatures and cross-section sizes. Our results show that the structure stability of the Au nanobelts depends on the nanobelt size, initial orientation, boundary conditions and temperature exists for Au nanobelts to transform from initial 100 nanobelt to final 110 nanobelt. The mechanism of the reorientation is the slip and spread of dislocation through the nanobelt under compressive stress caused by tensile surface-stress components.

University of Birmingham Orientational selective growth of single-atomic-layer gold nano-sheet via van der Waals interlocking and octanethiolate-confined molecular channels

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions

Orientational Epitaxy of Van Der Waals Molecular Heterostructures

Atomistic Mechanisms of Orientation and Temperature Dependence in Gold-Catalyzed Silicon Growth

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Structure and bonding issues at the interface between gold and self-assembled conjugated dithiol monolayers.

Precision engineering of nano-assemblies in superfluid helium by the use of van der Waals forces

Direct growth of single-chiral-angle tungsten disulfide nanotubes using gold nanoparticle catalysts

Dynamics of Antimonene–Graphene Van Der Waals Growth

Twin-Assisted Growth of Nominally Stable Substrates Underneath Dewetted Au Nanoparticles

In-situ self-assembly growth of controllable gold nanoparticles film

Trace water mediated growth of oriented single-crystalline mesoporous metal-organic frameworks on gold nanorods.

Oriented attachment interfaces of zeolitic imidazolate framework nanocrystals

Growth and In-Plane Undulations of GaAs/Ge Superlattices on [001]-Oriented Ge and GaAs Substrates: Formation of Regular 3D Island-in-network Nanostructures

Effect of Interfacial Structure on Gold-assisted Growth of Oxides

Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

Gold Nanobelt Reorientation By Molecular Dynamics Simulation