Abstract:Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Phi(M1)/Phi(M2) have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Construction of Logic Gate Based on Multi-channel Carbon Nanotube Field-Effect Transistors

Multichannel Carbon-Nanotube FETs and Complementary Logic Gates With Nanowelded Contacts

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Fabrication and Characterization of the Performance of Multi-Channel Carbon-Nanotube Field-Effect Transistors

Complementary Logic Gate Arrays Based on Carbon Nanotube Network Transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Floating Gate Carbon Nanotube Dual-Gate Field-Effect Transistor for Reconfigurable AND/OR Logic Gates

Carbon Nanotube Multi-Channeled Field-Effect Transistors.

Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.

Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)

Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Multichannel Carbon Nanotube Field-Effect Transistors with Compound Channel Layer

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

CMOS-based carbon nanotube pass-transistor logic integrated circuits

Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Field-effect Transistors with Multiple Channels Constructed by Carbon Nanotubes