High critical current density and vortex pinning of epitaxialMgB2thin films

S. Xu,Qi Li,E. Wertz,Y. Hu,A. Pogrebnyakov,X. Zeng,X. Xi,J. Redwing

DOI: https://doi.org/10.1103/PHYSREVB.68.224501

2003-12-05

Abstract:We have studied transport properties of a number of in situ epitaxial ${\mathrm{MgB}}_{2}$ thin films grown by hybrid physical-chemical vapor deposition. The films show single-crystal-like structure with a high ${T}_{c},$ a narrow $\ensuremath{\Delta}{T}_{c}$ and a high zero-field ${j}_{c}.$ The best ${j}_{c}(H=0)$ of the films at 5 K is comparable to the estimated depairing current density ${j}_{0}$ of ${\mathrm{MgB}}_{2}.$ The zero-field ${j}_{c}(T)$ data of different films can be scaled to $j(t)=(1\ensuremath{-}{t}^{2}{)}^{\ensuremath{\alpha}}{(1+t}^{2}{)}^{1/2},$ where ${j(t)=j}_{c}{(t)/j}_{c}(0)$ and ${t=T/T}_{c}.$ We have found that $\ensuremath{\alpha}=1.7\ifmmode\pm\else\textpm\fi{}0.1$ fits the data measured with the 4-probe method and $\ensuremath{\alpha}\ensuremath{\sim}2$ fits the data derived from the magnetization hysteresis M-H measurements. At low temperature the ${j}_{c}(H)$ of the films show a common feature that ${j}_{c}(H)$ first appears as a plateau when the external field is lower than ${H}^{*},$ where ${\ensuremath{\mu}}_{0}{H}^{*}\ensuremath{\sim}{10}^{\ensuremath{-}2}\mathrm{T},$ and then ${j}_{c}(H)\ensuremath{\propto}{H}^{\ensuremath{-}\ensuremath{\beta}}$ when the field is lower than a crossover value ${\ensuremath{\mu}}_{0}{H}_{m}\ensuremath{\sim}1\mathrm{T},$ where $\ensuremath{\beta}\ensuremath{\sim}0.7\char21{}1.0$ resembling that of epitaxial high-${T}_{c}$ cuprate films. Above ${H}_{m},$ ${j}_{c}(H)$ decreases steeply. These results may be associated with the columnar growth mode of the films, where strong pinning centers are mainly located at the column boundaries or twin boundaries, and within a single-crystal-like column the pinning is weak. At low temperature, nearly temperature independent small peaks and flip-over in M-H loops are observed in the films, consistent with the high thermal activation energy ${U}_{0}(H,T)$ values calculated from the resistivity measurement of the films.

Physics