Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Negative capacitance and related instabilities in theoretical models of the electric double layer and membrane capacitors

Why Do Ferroelectrics Exhibit Negative Capacitance?

Capacitance and Structure of Electric Double Layers: Comparing Brownian Dynamics and Classical Density Functional Theory

On the negative capacitance in ferroelectric heterostructures

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

A Carrier-Based Analytic Theory For Electrical Simulation Of Negative Capacitance Surrounding Gate Ferroelectric Capacitor

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Non-Hysteretic Condition in Negative Capacitance Junctionless FETs

A possible mechanism for the negative capacitance observed in organic devices

Spatially resolved steady-state negative capacitance

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

Curvature effects on electric-double-layer capacitance

Revisiting the theory of ferroelectric negative capacitance

Differential capacitance of the electric double layer: The interplay between ion finite size and dielectric decrement

Poisson-Nernst-Planck charging dynamics of an electric double layer capacitor: symmetric and asymmetric binary electrolytes

Negative Capacitance in BaTiO3/BiFeO3 Bilayer Capacitors.

Understanding the Effects of Electrode Meso-Macropore Structure and Solvent Polarity on Electric Double Layer Capacitors Based on a Continuum Model

Nanoscale Capacitance: A Quantum Tight-Binding Model

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Comments on "Negative capacitance effect in semiconductor devices" [by M. Ershov et al., with reply]

Systematic Interpretation of Time Effect on Negative Capacitance of Ferroelectrics Based on Electrostatics and Charge Dynamics