Graphene edge interference improves single-molecule transistors

Héctor Vázquez

DOI: https://doi.org/10.1038/s41565-024-01634-0

IF: 38.3

2024-03-26

Nature Nanotechnology

Abstract:The performance of three-terminal molecular transistors is enhanced through the harnessing of quantum interference in the edges of graphene electrodes.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Quantum Interference Enhances the Performance of Single-Molecule Transistors

Zhixin Chen,Iain M. Grace,Steffen L. Woltering,Lina Chen,Alex Gee,Jonathan Baugh,G. Andrew D. Briggs,Lapo Bogani,Jan A. Mol,Colin J. Lambert,Harry L. Anderson,James O. Thomas

2023-04-18

Abstract:An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics.

Chemical Physics,Mesoscale and Nanoscale Physics
Impact of edge shape on the functionalities of graphene-based single-molecule electronics devices

D. Carrascal,V. M. García-Suárez,J. Ferrer

DOI: https://doi.org/10.1103/PhysRevB.85.195434

2012-02-13

Abstract:We present an ab-initio analysis of the impact of edge shape and graphene-molecule anchor coupling on the electronic and transport functionalities of graphene-based molecular electronics devices. We analyze how Fano-like resonances, spin filtering and negative differential resistance effects may or may not arise by modifying suitably the edge shapes and the terminating groups of simple organic molecules. We show that the spin filtering effect is a consequence of the magnetic behavior of zigzag-terminated edges, which is enhanced by furnishing these with a wedge shape. The negative differential resistance effect is originated by the presence of two degenerate electronic states localized at each of the atoms coupling the molecule to graphene which are strongly affected by a bias voltage. The effect could thus be tailored by a suitable choice of the molecule and contact atoms if edge shape could be controlled with atomic precision.

Mesoscale and Nanoscale Physics
Quantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped-molecule connected to graphene nanoribbon electrodes

Kamal K. Saha,Branislav K. Nikolic,Vincent Meunier,Wenchang Lu,J. Bernholc

DOI: https://doi.org/10.1103/PhysRevLett.105.236803

2010-12-02

Abstract:We study all-carbon-hydrogen molecular transistors where zigzag graphene nanoribbons play the role of three metallic electrodes connected to a ring-shaped 18-annulene molecule. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show that the proposed nanostructures exhibit exponentially small transmission when the source and drain electrodes are attached in a configuration that ensures destructive interference of electron paths around the ring. The third electrode, functioning either as an attached infinite-impedance voltage probe or as an "air-bridge" top gate covering half of molecular ring, introduces dephasing that brings the transistor into the "on" state with its transmission in the latter case approaching the maximum limit for a single conducting channel device. The current through the latter device can also be controlled in the far-from-equilibrium regime by applying a gate voltage.

Mesoscale and Nanoscale Physics
Quantum Electron Transport in Ohmic Edge Contacts between Two-Dimensional Materials

Wushi Dong,Peter B. Littlewood

DOI: https://doi.org/10.1021/acsaelm.9b00095

IF: 4.494

2019-06-04

ACS Applied Electronic Materials

Abstract:In-plane edge contacts can achieve both minimal volume and low contact resistance to further shrink transistor dimensions and increase device performance. However, a quantitative understanding of their electron transport properties is still lacking. Here we present atomistic full-band self-consistent quantum transport simulations of the graphene/MoS2 edge contact using a Wannier-function basis. We find efficient tunneling of electrons resulting in ohmic behavior in its I–V characteristics, which agrees with experiments. Our results also demonstrate the role played by trapped charges in the formation of a Schottky barrier. Our framework can be extended conveniently to incorporate more general nanostructure geometries.

materials science, multidisciplinary,engineering, electrical & electronic
Field-Effect Tunneling between Quantum Valley Hall Edge States and Topological Transistors Based on Bilayer Graphene

Jiajun Feng,Hui Tan,Jun-Feng Liu,and Jun Wang

DOI: https://doi.org/10.1103/physrevapplied.19.024072

IF: 4.6

2023-02-28

Physical Review Applied

Abstract:We study the tunneling effect between quantum valley Hall edge states under an applied electric field in bilayer graphene containing gaps. A topological transistor based on this tunneling effect is proposed. In the on state of the transistor, the quantum valley Hall edge state along one bilayer-graphene zigzag edge can tunnel to the other edge under an electric field. In the off state without the electric field, the edge state cannot tunnel to the other edge and should be reflected by the top armchair edge and retrace the route along the same zigzag edge. The performance of the transistor is shown to be robust against long-range impurities. Compared with the previous transistor based on quantum spin Hall edge states [Xu et al . Phys. Rev. Lett. 123, 206801 (2019)], this transistor based on quantum valley Hall edge states has the advantages that it does not need a ferromagnetic gate to bridge the gap in the edge states and the conductance is robust against both nonmagnetic and magnetic impurities. https://doi.org/10.1103/PhysRevApplied.19.024072 © 2023 American Physical Society

physics, applied
Quantum Interference Mediated Vertical Molecular Tunneling Transistors

Chuancheng Jia,Marjan Famili,Marco Carlotti,Yuan Liu,Peiqi Wang,Iain M. Grace,Ziying Feng,Yiliu Wang,Zipeng Zhao,Mengning Ding,Xiang Xu,Chen Wang,Sung-Joon Lee,Yu Huang,Ryan C. Chiechi,Colin J. Lambert,Xiangfeng Duan

DOI: https://doi.org/10.1126/sciadv.aat8237

IF: 13.6

2018-01-01

Science Advances

Abstract:Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. However, due to their complex fabrication processes and poor stability, traditional molecular transistors can only operate stably at cryogenic temperatures. Here, through a combined experimental and theoretical investigation, we demonstrate a new design of vertical molecular tunneling transistors, with stable switching operations up to room temperature, formed from cross-plane graphene/self-assembled monolayer (SAM)/gold heterostructures. We show that vertical molecular junctions formed from pseudo- p -bis((4-(acetylthio)phenyl)ethynyl)- p -[2,2]cyclophane (PCP) SAMs exhibit destructive quantum interference (QI) effects, which are absent in 1,4-bis(((4-acetylthio)phenyl)ethynyl)benzene (OPE3) SAMs. Consequently, the zero-bias differential conductance of the former is only about 2% of the latter, resulting in an enhanced on-off current ratio for (PCP) SAMs. Field-effect control is achieved using an ionic liquid gate, whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting on-off current ratio achieved in PCP SAMs can reach up to ~330, about one order of magnitude higher than that of OPE3 SAMs. The demonstration of molecular junctions with combined QI effect and gate tunability represents a critical step toward functional devices in future molecular-scale electronics.
Exceptionally clean single-electron transistors from solutions of molecular graphene nanoribbons

Wenhui Niu,Simen Sopp,Alessandro Lodi,Alex Gee,Fanmiao Kong,Tian Pei,Pascal Gehring,Jonathan Nägele,Chit Siong Lau,Ji Ma,Junzhi Liu,Akimitsu Narita,Jan Mol,Marko Burghard,Klaus Müllen,Yiyong Mai,Xinliang Feng,Lapo Bogani

DOI: https://doi.org/10.1038/s41563-022-01460-6

IF: 41.2

2023-02-03

Nature Materials

Abstract:Only single-electron transistors with a certain level of cleanliness, where all states can be properly accessed, can be used for quantum experiments. To reveal their exceptional properties, carbon nanomaterials need to be stripped down to a single element: graphene has been exfoliated into a single sheet, and carbon nanotubes can reveal their vibrational, spin and quantum coherence properties only after being suspended across trenches 1,2,3 . Molecular graphene nanoribbons 4,5,6 now provide carbon nanostructures with single-atom precision but suffer from poor solubility, similar to carbon nanotubes. Here we demonstrate the massive enhancement of the solubility of graphene nanoribbons by edge functionalization, to yield ultra-clean transport devices with sharp single-electron features. Strong electron–vibron coupling leads to a prominent Franck–Condon blockade, and the atomic definition of the edges allows identifying the associated transverse bending mode. These results demonstrate how molecular graphene can yield exceptionally clean electronic devices directly from solution. The sharpness of the electronic features opens a path to the exploitation of spin and vibrational properties in atomically precise graphene nanostructures.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Graphene Quantum Strain Transistors

A.C. McRae,G. Wei,A.R. Champagne,and A.R. Champagne G. Wei A.C. McRae

DOI: https://doi.org/10.1103/PhysRevApplied.11.054019

IF: 4.6

2019-10-07

Physical Review Applied

Abstract:Making transistors with high on-off ratio out of pristine graphene (without a band gap) would be a major development in quantum electronics and flexible electronics. The authors show theoretically how to achieve ballistic graphene transistors by combining uniaxial strain and device engineering. Substantial quantitative improvements to prior idealized models result from including realistic contact effects and strain fields. A design to independently control strain and charge density in quantum transport strain engineering (QTSE) experiments is also offered. These results can guide and accelerate the experimental realization of recent proposals for the QTSE of two-dimensional materials. [Phys. Rev. Applied 11, 054019] Published Tue May 07, 2019

physics, applied
Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Hantao Sun,Xunshan Liu,Yanjie Su,Bing Deng,Hailin Peng,Silvio Decurtins,Stefano Sanvito,Shi-Xia Liu,Shimin Hou,Jianhui Liao

DOI: https://doi.org/10.1039/c9nr01551e

IF: 6.7

2019-01-01

Nanoscale

Abstract:Using graphene as electrodes provides an opportunity for fabricating stable single-molecule field-effect transistors (FETs) operating at room temperature. However, the role of the unique graphene band structure in charge transport of single-molecule devices is still not clear. Here we report the Dirac-cone induced electrostatic gating effects in single-molecule FETs with graphene electrodes and a solid-state local bottom gate. With the highest occupied molecular orbital (HOMO) as the dominating conduction channel and the graphene leads remaining intrinsic at zero gate voltage, electrostatic gating on the HOMO and the density of states of graphene at the negative gate polarity reinforces each other, resulting in an enhanced conductance modulation. In contrast, gating effects on the HOMO and the graphene states at the positive gate polarity are opposite. Depending on the gating efficiencies, the conductance can decrease, increase or remain almost unchanged when a more positive gate voltage is applied. Our observations can be well understood by a modified single-level model taking into account the linear dispersion of graphene near the Dirac point. Single-molecule FETs with Dirac-cone enhanced gating have shown high performances, with the modulation of a wide range of current over one order of magnitude. Our studies highlight the advantages of using graphene as an electrode material for molecular devices and pave the way for single-molecule FETs toward circuitry applications.
Quantum Interference-Controlled Conductance Enhancement in Stacked Graphene-like Dimers.

Peihui Li,Songjun Hou,Bader Alharbi,Qingqing Wu,Yijian Chen,Li Zhou,Tengyang Gao,Ruihao Li,Lan Yang,Xinyue Chang,Gang Dong,Xunshan Liu,Silvio Decurtins,Shi-Xia Liu,Wenjing Hong,Colin J. Lambert,Chuancheng Jia,Xuefeng Guo

DOI: https://doi.org/10.1021/jacs.2c05909

IF: 15

2022-01-01

Journal of the American Chemical Society

Abstract:Stacking interactions are of significant importance in the fields of chemistry, biology, and material optoelectronics because they determine the efficiency of charge transfer between molecules and their quantum states. Previous studies have proven that when two monomers are π-stacked in series to form a dimer, the electrical conductance of the dimer is significantly lower than that of the monomer. Here, we present a strong opposite case that when two anthanthrene monomers are π-stacked to form a dimer in a scanning tunneling microscopic break junction, the conductance increases by as much as 25 in comparison with a monomer, which originates from a room-temperature quantum interference. Remarkably, both theory and experiment consistently reveal that this effect can be reversed by changing the connectivity of external electrodes to the monomer core. These results demonstrate that synthetic control of connectivity to molecular cores can be combined with stacking interactions between their π systems to modify and optimize charge transfer between molecules, opening up a wide variety of potential applications ranging from organic optoelectronics and photovoltaics to nanoelectronics and single-molecule electronics.
Mechanically controlled quantum interference in graphene break junctions

Sabina Caneva,Pascal Gehring,Víctor M García-Suárez,Amador García-Fuente,Davide Stefani,Ignacio J Olavarria-Contreras,Jaime Ferrer,Cees Dekker,Herre S J van der Zant

DOI: https://doi.org/10.1038/s41565-018-0258-0

Abstract:The ability to detect and distinguish quantum interference signatures is important for both fundamental research and for the realization of devices such as electron resonators1, interferometers2 and interference-based spin filters3. Consistent with the principles of subwavelength optics, the wave nature of electrons can give rise to various types of interference effects4, such as Fabry-Pérot resonances5, Fano resonances6 and the Aharonov-Bohm effect7. Quantum interference conductance oscillations8 have, indeed, been predicted for multiwall carbon nanotube shuttles and telescopes, and arise from atomic-scale displacements between the inner and outer tubes9,10. Previous theoretical work on graphene bilayers indicates that these systems may display similar interference features as a function of the relative position of the two sheets11,12. Experimental verification is, however, still lacking. Graphene nanoconstrictions represent an ideal model system to study quantum transport phenomena13-15 due to the electronic coherence16 and the transverse confinement of the carriers17. Here, we demonstrate the fabrication of bowtie-shaped nanoconstrictions with mechanically controlled break junctions made from a single layer of graphene. Their electrical conductance displays pronounced oscillations at room temperature, with amplitudes that modulate over an order of magnitude as a function of subnanometre displacements. Surprisingly, the oscillations exhibit a period larger than the graphene lattice constant. Charge-transport calculations show that the periodicity originates from a combination of the quantum interference and lattice commensuration effects of two graphene layers that slide across each other. Our results provide direct experimental observation of a Fabry-Pérot-like interference of electron waves that are partially reflected and/or transmitted at the edges of the graphene bilayer overlap region.
Quantum behavior of graphene transistors near the scaling limit.

Yanqing Wu,Vasili Perebeinos,Yu-ming Lin,Tony Low,Fengnian Xia,Phaedon Avouris

DOI: https://doi.org/10.1021/nl204088b

IF: 10.8

2012-01-01

Nano Letters

Abstract:The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity, and of the on/off current ratio are investigated.
Dual-gated Single-Molecule Field-Effect Transistors Beyond Moore’s Law

Linan Meng,Na Xin,Chen Hu,Hassan Al Sabea,Miao Zhang,Hongyu Jiang,Yiru Ji,Chuancheng Jia,Zhuang Yan,Qinghua Zhang,Lin Gu,Xiaoyan He,Pramila Selvanathan,Lucie Norel,Stéphane Rigaut,Hong Guo,Sheng Meng,Xuefeng Guo

DOI: https://doi.org/10.1038/s41467-022-28999-x

IF: 16.6

2022-01-01

Nature Communications

Abstract:As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high- k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore’s law.
Connections to the Electrodes Control the Transport Mechanism in Single‐Molecule Transistors

Zhixin Chen,Steffen Woltering,Bart Limburg,Ming-Yee Tsang,Jonathan Baugh,Andrew Briggs,Jan Mol,Harry Anderson,James Thomas

DOI: https://doi.org/10.1002/anie.202401323

2024-02-28

Angewandte Chemie International Edition

Abstract:When designing a molecular electronic device for a specific function, it is necessary to control whether the charge-transport mechanism is phase-coherent transmission or particle-like hopping. Here we report a systematic study of charge transport through single zinc-porphyrin molecules embedded in graphene nanogaps to form transistors, and show that the transport mechanism depends on the chemistry of the molecule–electrode interfaces. We show that van der Waals interactions between molecular anchoring groups and graphene yield transport characteristic of Coulomb blockade with incoherent sequential hopping, whereas covalent molecule–electrode amide bonds give intermediately or strongly coupled single-molecule devices that display coherent transmission. These findings demonstrate the importance of interfacial engineering in molecular electronic circuits.

chemistry, multidisciplinary
The Tunable Electrical Properties of Graphene Nano-Bridges

Peng Zhou,Hongqiang Wei,Qingqing Sun,Pengfei Wang,Shijin Ding,Anquan Jiang,David Wei Zhang

DOI: https://doi.org/10.1039/c3tc30145a

IF: 6.4

2013-01-01

Journal of Materials Chemistry C

Abstract:Reduced graphene oxide nano-bridges and tunable electrical transport properties of reduced graphene oxide based transistors are achieved by using tip-based nanolithography. The polarity dependence of the reduction is revealed with a threshold reduction bias of -6 V on the nano-scale tip. The best carrier mobilities up to now for holes and for electrons in reduced-graphene-oxide-based nano-scale transistors are about 5.6 cm(2) V-1 s(-1) and 3.2 cm(2) V-1 s(-1) at room temperature. Moreover, the tunable output and transport properties have been realized for the first time by the controlled nano-tip electrochemical reaction with different reduction nano-tip biases. These tunable electrical properties of graphene based transistors will be extended to develop various novel optoelectronic and microelectronic applications. It opens a possible way to mass production of a graphene oxide based device, representing a significant step forward for electrical applications.
Tunable Graphene Dc Superconducting Quantum Interference Device.

Caglar Girit,Vincent Bouchiat,Ofer Naaman,Yuanbo Zhang,M. F. Crommie,A. Zettl,Irfan Siddiqi

DOI: https://doi.org/10.1021/nl802765x

2009-01-01

physica status solidi (b)

Abstract:Graphene exhibits unique electrical properties on account of its reduced dimensionality and "relativistic" band structure. When contacted with two superconducting electrodes, graphene can support Cooper pair transport, resulting in the well-known Josephson effect. We report here the fabrication and operation of a two junction dc superconducting quantum interference device (SQUID) formed by a single graphene sheet contacted with aluminum/palladium electrodes in the geometry of a loop. The supercurrent in this device can be modulated not only via an electrostatic gate but also by an applied magnetic fielda potentially powerful probe of electronic transport in graphene and an ultrasensitive platform for nanomagnetometry.
Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Thanasis Georgiou,Rashid Jalil,Branson D. Belle,Liam Britnell,Roman V. Gorbachev,Sergey V. Morozov,Yong-Jin Kim,Ali Gholinia,Sarah J. Haigh,Oleg Makarovsky,Laurence Eaves,Leonid A. Ponomarenko,Andre K. Geim,Kostya S. Novoselov,Artem Mishchenko

DOI: https://doi.org/10.1038/nnano.2012.224

2012-11-22

Abstract:The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.

Mesoscale and Nanoscale Physics,Materials Science
Electric imaging and dynamics of photo-charged graphene edge

Zhe Ding,Zhousheng Chen,Xiaodong Fan,Weihui Zhang,Jun Fu,Yumeng Sun,Zhi Cheng,Zhiwei Yu,Kai Yang,Yuxin Li,Xing Liu,Pengfei Wang,Ya Wang,Jianhua Jiang,Hualing Zeng,Changgan Zeng,Guosheng Shi,Fazhan Shi,Jiangfeng Du

2024-09-23

Abstract:The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric field distribution near the edge provides the physical limit of the effective channel length, however, its imaging under ambient conditions still lacks, which is a critical aspect for the practical deployment of semiconductor devices. Here, we used scanning nitrogen-vacancy microscopy to investigate the electric field distribution near edges of a single-layer-graphene. Real-space scanning maps of photo-charged floating graphene flakes were acquired with a spatial resolution of $\sim$ 10 nm, and the electric edge effect was quantitatively studied by analyzing the NV spin energy level shifts due to the electric Stark effect. Since the graphene flakes are isolated from external electric sources, we brought out a theory based on photo-thermionic effect to explain the charge transfer from graphene to oxygen-terminated diamond probe with a disordered distribution of charge traps. Real-time tracing of electric fields detected the photo-thermionic emission process and the recombination process of the emitted electrons. This study provides a new perspective for graphene-based one-dimensional gates and opto-electronics with nanoscale real-space imaging, and moreover, offers a novel method to tune the chemical environment of diamond surfaces based on optical charge transfer.

Mesoscale and Nanoscale Physics,Quantum Physics
Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Gaia Ciampalini,Filippo Fabbri,Guido Menichetti,Luca Buoni,Simona Pace,Vaidotas Mišeikis,Alessandro Pitanti,Dario Pisignano,Camilla Coletti,Alessandro Tredicucci,Stefano Roddaro

DOI: https://doi.org/10.1021/acsnano.1c09131

2022-01-19

Abstract:We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel.

Mesoscale and Nanoscale Physics,Materials Science

Graphene edge interference improves single-molecule transistors

Quantum Interference Enhances the Performance of Single-Molecule Transistors

Impact of edge shape on the functionalities of graphene-based single-molecule electronics devices

Quantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped-molecule connected to graphene nanoribbon electrodes

Quantum Electron Transport in Ohmic Edge Contacts between Two-Dimensional Materials

Field-Effect Tunneling between Quantum Valley Hall Edge States and Topological Transistors Based on Bilayer Graphene

Quantum Interference Mediated Vertical Molecular Tunneling Transistors

Exceptionally clean single-electron transistors from solutions of molecular graphene nanoribbons

Graphene Quantum Strain Transistors

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Quantum Interference-Controlled Conductance Enhancement in Stacked Graphene-like Dimers.

Mechanically controlled quantum interference in graphene break junctions

Quantum behavior of graphene transistors near the scaling limit.

Dual-gated Single-Molecule Field-Effect Transistors Beyond Moore’s Law

Connections to the Electrodes Control the Transport Mechanism in Single‐Molecule Transistors

The Tunable Electrical Properties of Graphene Nano-Bridges

Tunable Graphene Dc Superconducting Quantum Interference Device.

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Electric imaging and dynamics of photo-charged graphene edge

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture