Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

The Tunable Electrical Properties of Graphene Nano-Bridges

Electrically Tunable Polarizer Based on Graphene-Loaded Plasmonic Cross Antenna

Tunable Nanoantenna Based On Graphene

Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics

Electrical Tuning of Surface Plasmon Polariton Propagation in Graphene-Nanowire Hybrid Structure.

Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation

Graphene Dirac Point Tuned by Ferroelectric Polarization Field

Optimizing the fabrication process for high performance graphene field effect transistors.

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Tunable Electronic Properties of Graphene Through Controlling Bonding Configurations of Doped Nitrogen Atoms

High-Performance Photoresponsive Organic Nanotransistors with Single-Layer Graphenes as Two-Dimensional Electrodes

Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

Connections to the Electrodes Control the Transport Mechanism in Single‐Molecule Transistors

Manipulating graphene mobility and charge neutral point with ligand-bound nanoparticles as charge reservoir.

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Gate Tunable Nonlinear Rectification Effects in Three-Terminal Graphene Nanojunctions

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Application of Graphene within Optoelectronic Devices and Transistors

Graphene transistor based on tunable Dirac fermion optics

Direct Writing of Electronic Devices on Graphene Oxide by Catalytic Scanning Probe Lithography

Electric-Field Control of Giant On/Off Current Ratio in Graphene Through Reversible Hydrogenation