Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Quantum Electron Transport in Ohmic Edge Contacts between Two-Dimensional Materials

Quantum behavior of graphene transistors near the scaling limit.

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals.

Approaching the quantum limit in two-dimensional semiconductor contacts

Electronic Transport Across Metal-Graphene Edge Contact

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors

Two Dimensional Quantum Mechanical Modeling of Nanotransistors

First Principles Studies on Electronic and Transport Properties of Edge Contact Graphene-Mos2 Heterostructure

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Conductance Quantization in 2D Semi-Metallic Transition Metal Dichalcogenides

Edge-state transport in circular quantum point contact quantum piezotronic transistors

Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation

Quantized conductance in hybrid split-gate arrays of superconducting quantum point contacts with semiconducting two-dimensional electron systems

Tunable Contacts in Graphene/InSe Van Der Waals Heterostructures

Single-electron Transport in Graphene-like Nanostructures