Crystal growth and optical properties of Ce-doped (La,Y)$_2$Si$_2$O$_7$ single crystal
Takahiko Horiai,Juraj Paterek,Jan Pejchal,Marketa Jarosova,Jan Rohlicek,Shunsuke Kurosawa,Takashi Hanada,Masao Yoshino,Akihiro Yamaji,Satoshi Toyoda,Hiroki Sato,Yuji Ohashi,Kei Kamada,Yuui Yokota,Akira Yoshikawa,Martin Nikl
DOI: https://doi.org/10.1016/j.jcrysgro.2021.126252
2021-04-20
Abstract:We have grown Ce-doped (La,Y)$_2$Si$_2$O$_7$ single crystal by micro-pulling-down method and investigated its optical and scintillation properties. We have successfully prepared the single crystal with (Ce$_{0.015}$La$_{0.600}$Y$_{0.385}$)$_2$Si$_2$O$_7$ composition. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. Further considering the thermal quenching factors, it was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively. These results indicate that (Ce$_{0.015}$La$_{0.600}$Y$_{0.385}$)$_2$Si$_2$O$_7$ has a great potential for application in scintillation materials.
Optics,Materials Science