A Fast IGBT Junction Temperature Estimation Approach Based on ON-State Voltage Drop
Yanyong Yang,Qinghao Zhang,Pinjia Zhang
DOI: https://doi.org/10.1109/tia.2020.3030753
IF: 4.079
2021-01-01
IEEE Transactions on Industry Applications
Abstract:Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures. Health management of converters based on accurate IGBT junction temperature is of great importance to reliable operation. However, the existing monitoring methods have some drawbacks, including low feasibility of online implementation, intrusiveness, and slow response. IGBT junction temperature has a strong influence on IGBT on-state voltage drop. A novel online IGBT junction temperature measurement method based on the on-state voltage drop is proposed in this article. This technique can monitor the on-state voltage drop of IGBT and extract IGBT junction temperature online. Besides, the influences of the measurement circuit temperature variations and IGBT load current variations are considered and compensated based on the off-state stage of the IGBT. Simulation and experimental results validate the feasibility of the proposed technique. The proposed method has advantages of fast response, low cost, and simple circuit structure for noninvasive online IGBT junction temperature monitoring.
engineering, electrical & electronic, multidisciplinary