A Self-Power Method for a Converter-Level on-State Voltage Measurement Concept

Yingzhou Peng,Huai Wang
DOI: https://doi.org/10.1109/tpel.2021.3053202
IF: 5.967
2021-08-01
IEEE Transactions on Power Electronics
Abstract:This article discloses part of an invention on plug-and-play converter-level on-state voltage measurement methods for power semiconductor devices. To exclude the external power supply required in on-state voltage measurement circuits, a self-power solution is proposed to provide the required bidirectional low-voltage power sources. The application of the measurement circuit with the proposed self-power solution is demonstrated for a single-switch, a single-phase inverter, and a three-phase inverter.
engineering, electrical & electronic
What problem does this paper attempt to address?
This paper attempts to address the issue of voltage measurement in the on-state of power semiconductor devices (such as Insulated Gate Bipolar Transistor IGBT, Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET, etc.). Specifically: 1. **Non-intrusive Measurement**: A self-powered method is proposed for plug-in converter-level on-state voltage measurement. This method does not affect the gate driver, has a relatively low frequency, and simplifies the measurement process. 2. **Cost and Complexity Reduction**: Existing measurement methods typically require isolated power supplies, which increase circuit complexity and cost. The method proposed in this paper reduces the need for external power supplies through a self-powered scheme, thereby lowering cost and complexity. 3. **Extension to Three-Phase Inverter Applications**: The application previously targeted at single-phase inverters has been extended to three-phase inverters, covering a broader range of industrial application scenarios. The design principles have also been optimized to improve accuracy and response speed. 4. **Improved Accuracy and Response Speed**: The proposed circuit's performance in dynamic response and DC accuracy calibration has been validated through experiments, demonstrating its effectiveness in extracting on-state voltage signals from both ends of the IGBT. 5. **Monitoring Degradation Process**: The method shows how to monitor the degradation process and temperature changes of power semiconductor devices. In certain critical applications (such as train traction systems), real-time measurement of on-state voltage is crucial for achieving condition monitoring. In summary, this research aims to provide a simpler and more cost-effective solution for on-state voltage measurement of power semiconductor devices through a novel self-powered technology.