High-Performance N79 Band AlScN BAW Resonator and Filter with the Consideration of Area Effect
Rui Ding,Weipeng Xuan,Feng Gao,Tengbo Cao,Hao Jin,Jikui Luo,Fei Ma,Shurong Dong
DOI: https://doi.org/10.1109/ted.2023.3311773
IF: 3.1
2023-01-01
IEEE Transactions on Electron Devices
Abstract:With the increase of operating frequency above 4 GHz, the required resonator size is reduced to hundreds of $\mu \text{m}^{{2}}$ , which is proportional to 1/ ${f}^{\,{2}}$ . In traditional, the size reduction of the resonator will induce its parallel resonant frequency decrease, thus resulting in the decrease of its effective coupling coefficient ( ${k}_{\,{t}}^{\,{2}}$ ). Besides the parallel resonant frequency, we found that the serial resonant frequency of resonators working above 3 GHz also varies with its area size. However, this effect is not taken into account in conventional circuit models, leading to the failure of high-performance filter design. To address this issue, a modified Mason model of bulk acoustic wave (BAW) resonators was proposed in this work. Using the modified model, a high-performance N79 band (4.8–4.96 GHz) filter based on Al0.904Sc $_{{0.096}}\text{N}$ piezoelectric film was designed and fabricated, which achieved a minimum insertion loss of −0.93 dB and a bandwidth of 240 MHz. The power capacity and wire-bond package of BAW filters were further studied. The whole process of the Mason model modification, filter design, and fabrication pave the road for high-frequency filter applications.