Abstract:The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe2 crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T' semimetallic phase at high temperatures. Alloying MoTe2 with WTe2 reduces the energy barrier between these two phases, while also allowing access to the T d Weyl semimetal phase. The Mo1-x WxTe2 alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe2-WTe2 system. We combine polarization-resolved Raman spectroscopy with x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study bulk Mo1-xWxTe2 alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T', and T d structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe2-WTe2 system, including single-phase 2H, 1T', and T d regions, as well as a two-phase 1T' + T d region. Disorder arising from compositional fluctuations in Mo1-xWxTe2 alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T'-MoTe2 mode and the enhancement of a double-resonance Raman process in 2H-Mo1-x WxTe2 alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in Mo1-xWxTe2 alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

Growth and Electrical Properties of Polymorphs of Mo-Te Crystals

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Extremely Large Magnetoresistance in the Type-Ii Weyl Semimetalmote2

High band degeneracy and weak chemical bonds leading to enhanced thermoelectric transport properties in 2H–MoTe2

Bandgap opening in MoTe 2 thin flakes induced by surface oxidation

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The structural phases and vibrational properties of Mo1-xWxTe2 alloys

Hydrothermal controlled growth of MoTe2/MoO3−x materials: Synthesis mechanism, light-matter interaction and its photoelectrochemical activity

Single-layer Mo 5 Te 8 ― A new polymorph of layered transition-metal chalcogenide

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Growth of bilayer MoTe 2 single crystals with strong non-linear Hall effect

Robust temperature–strain coupling in phase and shape evolution of MoTe2 nanosheets

Exploring optical properties of and single crystals by spectroscopic ellipsometry

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect

Photocarrier Dynamics in MoTe<sub>2</sub> Nanofilms with 2<i>H</i> and Distorted 1<i>T</i> Lattice Structures

Thermodynamics and Kinetics Synergetic Phase-Engineering of Chemical Vapor Deposition Grown Single Crystal MoTe2 Nanosheets