Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

GaN based DC-DC converters for high energy physics applications

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A GaN-based MHz Active Clamp Flyback Converter with Adaptive Dual Edge Dead Time Modulation for AC-DC Adapters.

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

A High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

Analysis of MHz 380V-12V DCX with Low FoM Device

FoM Based Optimal Frequency and Voltage Level Design for High Efficiency High Density Multilevel PFC with GaN Device

High frequency and high power density bipolar DC–DC converter with GaN HEMT

A GaN HEMT Integrated Power Module with Silver Sintering Processes

A 10-Mhz Isolated Class DE Resonant DC/DC Converter Based on GaN HEMT

A 3kw GaN HEMT Based Three-phase Converter Achieving a Switching Frequency of 300khz and an Efficiency of 97.06%

A 98.3% Efficient GaN Isolated Bidirectional DC–DC Converter for DC Microgrid Energy Storage System Applications

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

A GaN-based Single-switch Forward Resonant DCX With ZVZCS Winding-clamping

MHz Level Two-Stage ZVS DC-DC Converter with Wide Input and Output Voltage Ranges

Accurate Evaluation of Commutations of 650 V GaN Power Switches Assisted by Electromagnetic Simulations in a 7 kW Dual Active Bridge Converter for Automotive Battery Charging Applications