Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

A 3kw GaN HEMT Based Three-phase Converter Achieving a Switching Frequency of 300khz and an Efficiency of 97.06%

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A GaN-based MHz Active Clamp Flyback Converter with Adaptive Dual Edge Dead Time Modulation for AC-DC Adapters.

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC

Ultra-Low Inductance Design for A Gan Hemt Based 3L-Anpc Inverter

10 Kw High Efficiency Compact GaN-Based DC/DC Converter Design

Comparison of the performance of Si, SiC, and GaN based switching elements in high gain DC-DC boost converter

FoM Based Optimal Frequency and Voltage Level Design for High Efficiency High Density Multilevel PFC with GaN Device

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

Review of GaN HEMT Applications in Power Converters over 500 W

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

A 10-Mhz Isolated Class DE Resonant DC/DC Converter Based on GaN HEMT

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

Design and Optimization of a Current-Driven Phase-Shift Full-Bridge Converter with GaN Devices and Large Conversion Ratio

Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation

Accurate Evaluation of Commutations of 650 V GaN Power Switches Assisted by Electromagnetic Simulations in a 7 kW Dual Active Bridge Converter for Automotive Battery Charging Applications

Design and Implementation of A 5kw 99.2% Efficient High-Density GaN-based Totem Pole Interleaved Bridgeless Bidirectional PFC

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter