Abstract:GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.

Enhanced Band-Tuning and Quality of Ni-Doped Ga2O3 Films via Low-Power RF Magnetron Sputtering

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Sputtering Power Induced Physical Property Variation of Nickel Oxide Films by Radio Frequency Magnetron Sputtering

Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

High optoelectronic performance of magnetron sputtered ZnO thin films co-doped with F and Ga: Experiment and first-principles calculations

Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

A Low-Cost and Convenient Route of Fabricating GaN Films with P-type Mixed Microcrystalline and Amorphous Structure Deposited Via Ga Target of Magnetron Sputtering

Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

Characterizations of Nickel Oxide Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

Properties of the Highly Textured (200) NiO Thin Film Deposited by RF Magnetron Sputtering

F, Mg and Ga co-doped ZnO transparent conductive thin films by dual-target magnetron sputtering: Fabrication, structure, and characteristics

Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

Modulation of the microstructure, optical properties and electrical properties of zinc-doped nickel oxide films via direct current sputtering power

Dopant Concentration Influence on the Optical Properties of NiO Thin Films Doped by Al and Nb Deposited by DC and RF Magnetron Sputtering

Influence of RF power on the opto-electrical and structural properties of gallium-doped zinc oxide thin films

Structural, electrical and optical properties of transparent conductive titanium–gallium–zinc oxide films by magnetron sputtering

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering

Properties of Ni doped and Ni–Ga co-doped ZnO thin films prepared by pulsed laser deposition

Properties of Li-Doped NiO Thin Films Prepared by RF-Magnetron Sputtering

Effect of Sputtering Power on Structural, Cationic Distribution and Optical Properties of Mn2Zn0.25Ni0.75O4 Thin Films