Abstract:The conventional surface x-ray diffraction method [1] allows us to determine atomic arrangements of crystal surfaces and interfaces.While x-ray diffraction intensities distributed within a reciprocal lattice space are usually measured with a finetooth comb using the method, an overall image of the diffraction intensity profile is difficult to get until after such lengthy and time consuming measurement is completed.We proposed x-ray reciprocal-lattice space imaging method (X-ReSI) for straightforward understanding of 1D nanostructures such as NiO nanowires [2].The X-ReSI is a single-exposure diffraction technique which records the reciprocallattice pattern of a fixed crystalline nanostructure using a 2D detector.The fundamental idea behind the method is that the reciprocal lattice of 1D or 2D structures are an array of sheets or rods, respectively.Thus the reciprocal-lattice space can be recorded for a fixed sample with a 2D x-ray detector fixed.The typical exposure time is a few seconds to a few minutes using the 3rd generation x-ray source.We applied the method to structural evaluation of Bi nanolines being 1/8 monolayers in coverage on average.The results of the application reveal that Bi nanolines embeded in Si was found to have a 2 x n superstructure having Bi dimer bonds [3].On the other hand line structures in samples capped with an amorphous Si layer and having no cap layers still remained with a non-detectable amount of the 2 x n atomic structures.Other applications are structural determination of a Bi4Ti3O12 thinfilm and in-situ observation of a Au electrode in H2SO4.

X-ray photoelectron diffraction as a modern tool for determining surface stacking sequence in layered materials

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+xSe2 films

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Thickness and Stacking Sequence Determination of Exfoliated Dichalcogenides (1T-Tas2, 2H-Mos2) Using Scanning Transmission Electron Microscopy

Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition

High-resolution surface structure determination from bulk X-ray diffraction data

Stacking of charge-density waves in 2H-NbSe$_2$ bilayers

Spectroscopic Analysis on Different Stacking Configurations of Multilayered MoSe2

Probing Complex Stacking in a Layered Material Via Electron-Nuclear Quadrupolar Coupling

Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis

Studies of Fesi2/Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffractions (Bsd)

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

Probing Planar Defects in Nanoparticle Superlattices by 3d Small-Angle Electron Diffraction Tomography and Real Space Imaging

Quasi-kinematic Low-Energy Electron Diffraction and Its Latest Applications

X-ray diffraction analysis to support phase identification in FeSe and Fe$_7$Se$_8$ epitaxial thin films

Imaging and Diffraction Characterisation of 2D Inorganic Nanostructures

Realizing In-Plane Surface Diffraction by X-Ray Multiple-Beam Diffraction with Large Incidence Angle

Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$

Structure Identification of Two-Dimensional Colloidal Semiconductor Nanocrystals with Atomic Flat Basal Planes.

Experimental and Theoretical Electronic Structure and Symmetry Effects in Ultrathin NbSe2 Films

Direct observation of the interplay between stacking polytypes and self-intercalation in epitaxial Nb1+xSe2 films