Influence of in-plane and bridging oxygen vacancies of SnO_2 nanostructures on CH_4 sensing at low operating temperatures

Venkataramana Bonu,A. Das,Arun K Prasad,Nanda Gopala Krishna,Sandip Dhara,A. K. Tyagi,A. K.Tyagi
DOI: https://doi.org/10.48550/arXiv.1508.07436
IF: 2.552
2015-08-29
Chemical Physics
Abstract:Role of 'O' defects in sensing pollutant with nanostructured SnO_2 is not well understood, especially at low temperatures. SnO_2 nanoparticles were grown by soft chemistry route followed by subsequent annealing treatment under specific conditions. Nanowires were grown by chemical vapor deposition technique. A systematic photoluminescence (PL) investigation of 'O' defects in SnO_2 nanostructures revealed a strong correlation between shallow donors created by the in-plane and the bridging 'O' vacancies and gas sensing at low temperatures. These SnO_2 nanostructures detected methane (CH_4), a reducing and green house gas at a low temperature of 50 ^oC. Response of CH_4 was found to be strongly dependent on surface defect in comparison to surface to volume ratio. Control over 'O' vacancies during the synthesis of SnO2 nanomaterials, as supported by X-ray photoelectron spectroscopy and subsequent elucidation for low temperature sensing are demonstrated.
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