Unraveling the Effect of Oxygen Vacancy on WO 3 Surface for Efficient NO 2 Detection at Low Temperature

Ruixia Li,Qiao Wang,Yanrong Wang,Beixi An,Yifan Yang,Zhengkun Wu,Peizhe Wang,Tingyu Zhang,Ruiqi Han,Erqing Xie
DOI: https://doi.org/10.1021/acsami.4c11801
IF: 9.5
2024-09-13
ACS Applied Materials & Interfaces
Abstract:Oxygen vacancies (V(O)) in metal oxide semiconductors play an important role in improving gas-sensing performance of chemiresistive gas sensors. Nonetheless, there is still a lack of clear understanding of the inherent mechanism of the influence of oxygen vacancies on gas sensing due to generally focusing on the concentration of V(O). Herein, oxygen vacancies were rationally modulated in WO(3) nanoflower structures via an annealing process, resulting in a transformation of V(O) from neutral...
materials science, multidisciplinary,nanoscience & nanotechnology
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