Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

Highly efficient DFB laser-assisted grating As 2 S 3 chalcogenide for integrated photonics

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Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

High-power, High-Spectral-purity GaSb-based Laterally Coupled Distributed Feedback Lasers with Metal Gratings Emitting at 2 Μ M

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Planar Chalcogenide Glass Mid-Infrared Photonics

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Chalcogenide glass based integrated photonics

Low-loss compact chalcogenide microresonators for efficient stimulated Brillouin lasers

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

Power Threshold Reduction and Laser Efficiency Improvement of Brillouin Fiber Laser Based on an As2S3 Chalcogenide Fiber Via a Mode Field Adaptor

Low-Threshold and Sub-kHz-Linewidth Brillouin Laser Based on Chalcogenide Fiber at 2 $\mu$m

Direct femtosecond laser writing fiber Bragg gratings in double-D cladding chalcogenide glass infrared fibers

Supercontinuum generation in As2S3 chalcogenide waveguide pumped by all-fiber structured dual-femtosecond solitons

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser under High Current Via a Grating Reflector

Chalcogenide Photonic Integration at 2 Micron with Improved Wavelength and Fabrication Dependency

High-efficiency Brillouin Lasing in a Planar GeSbS Spiral-Ring Resonator

Multifunctional chalcogenide (As2S3, As2Se3) dual-core PCF design for mid-IR optical communications

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Design and numerical modeling of chalcogenide parabolic‐core waveguide for on‐chip supercontinuum generation extending from near‐IR region to mid‐IR region

Mid-infrared Supercontinuum Generation in Chalcogenide Fibers with High Laser Damage Threshold.