Nanotubular ZrTiO 4 Prepared on Sputter Deposited Zr−Ti Films by Anodization

Yujie Zhao,Yang Yu,Kun Li,Gan Zhang,Kaiyuan Yu,Yan Li
DOI: https://doi.org/10.1002/celc.202101092
IF: 4
2021-11-02
ChemElectroChem
Abstract:Abstract Highly ordered nanotubular ZrTiO 4 thin films were synthesized by directly anodizing co‐sputtered Zr−Ti films deposited on silicon substrates. The crystals of as‐deposited Zr−Ti films preferred (002) orientation was beneficial to the nanotubular structure formation. The adjusted anodization potential and composition of Zr−Ti films resulted in a controllable nanotube diameter that ranges from approximately 45 nm to 110 nm. The thickness of as‐deposited Zr−Ti films and growth rates determined the length of nanotubular structure (1.7–4.5 μm). The decreased Ti content in the deposited Zr−Ti films lead to a higher nanotube growth rate due to the lower binding energy of Ti and oxygen. The higher Zr content in the Zr−Ti films was responsible for the crystalized nanotubular ZrTiO 4 after anodization.
electrochemistry
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