‘HJT 2.0’ PERFORMANCE IMPROVEMENTS AND COST BENEFITS FOR SILICON HETEROJUNTION CELL PRODUCTION

T. Kössler,P. Papet,D. Lachenal,B. Strahm,R. Kramer,L. Andreetta,N. Holm,M. Burger,B. Legradic,D. Bätzner,W. Frammelsberger
Abstract:: Silicon heterojunction technology (HJT) for mass production frequently meets reservations related to the performance and cost constraints the standard TCO on the cell front side namely indium tin oxide (ITO) constitutes. We address and mitigate these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of much thinner ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an improvement in device efficiency of typically 0.2% absolute due to increased cell current and a considerable cost saving of around 0.5ct$/Wp with respect to cost of ownership (CoO) for the module.
Engineering,Materials Science
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