Abstract:This paper presents a 10.56-GHz transceiver with ultracompact transformer-based transmit/receive (T/R) switching via matching network reuse. The reused transformer can operate as T/R switch and impedance matching networks for a power amplifier (PA) and a low-noise amplifier (LNA) simultaneously. The T/R switch, PA, and LNA are fully codesigned, and the interstage matching networks of the PA and LNA are comatched with the T/R switch to improve the performance of the front end (FE). A three-coil transformer is introduced in the PA to improve the linearity and bandwidth of the FE in the transmit (TX) mode. A mode selection unit (MSU) is also utilized in LNA to improve the TX/RX isolation and the linearity of the FE in the TX mode. Utilizing the fully codesign technique in the FE, the bandwidth of the FE is extended to over 4.2 GHz in both the TX and RX modes. A novel “gm-cell-based” broadband programmable gain amplifier (PGA) and a third-order transconductance-capacitor (gm-c) low-pass filter (LPF) are used in analog baseband to provide over 24-dB gain and 1.8-GHz bandwidth adjustment range with ultralow dc power consumption. To prove the concept, the new architecture is implemented in 28-nm CMOS technology. Measurement results prove that the insertion loss of the proposed T/R switch introduced in both the TX and RX modes is ~0.5 dB, and benefiting from this, the RX obtained a 4.2-dB noise figure, and TX obtained 9.9- and 14.1-dBm OP1dB and Psat. The measured single sideband bandwidth of the transceiver is wider than 2.1 GHz in both the TX and RX modes.

A Balanced T/R Switch for Wideband NMR Front-End

A Broadband NMR Magnetometer System with Field Searching and Automatic Tuning Function

Two-section branch-line hybrid couplers based broadband transmit/receive switch

Non‐Hermitian Loss‐driven Broadband Low‐Loss On‐chip Terahertz Photonic SPDT Switch

1 x N (N=2, 8) Silicon Selector Switch for Prospective Technologies at the 2 m Waveband

A MMW T/R front-end for TDD radio systems

A 0.5–30ghz Wideband Differential CMOS T/R Switch with Independent Bias and Leakage Cancellation Techniques

Co-Design of 60-Ghz Wideband Front-End IC with On-Chip T/R Switch Based on Passive Macro-Modeling

High-Isolation CMOS T/R Switch Design Using a Two-Stage Equivalent Transmission Line Structure

Low-Profile FSS-Based Polarization-Insensitive Rasorber with Switchable Transmission Band

A 10.56-Ghz Broadband Transceiver with Integrated T/R Switching Via Matching Network Re-use in 28-Nm CMOS Technology

The Design of a 57-65Ghz SPDT Switch with LC Resonant Techniques in 40 Nm CMOS Process

High isolation wideband CMOS T/R switch with leakage cancellation technique for software-defined radio transceiver

A Non-Reflective T/R Switch with Leakage Cancellation Technique for 5G Mmwave Application

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

A 10.56-Ghz Broadband Transceiver with Integrated T/R Switching Via Matching Network Reuse and 0.3–2.1-Ghz Baseband in 28-Nm CMOS Technology

A CMOS SPDT RF Switch with 68 Db Isolation and 1.0 Db Loss Feathering Switched Resonance Network for MIMO Applications

A Bidirectional 56-72 GHz to 10.56 GHz Tranceiver Front-End with Integrated T/R Switches in 28-nm CMOS Technology

A DC-10GHz SPDT RF Switch with Bulk Self-Biasing Technique in 0.25µm BiCMOS Process

A 24.25-27.5 GHz Front-End Module with Transformer-Based T/R Switch for 5-G Communications

Differential Low‐loss T/R Switch for Phase Array Application in 0.18‐μm CMOS Technology