High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing
Zijian Wang,Zeyu Guan,Haoyang Sun,Zhen Luo,Haoyu Zhao,He Wang,Yuewei Yin,Xiaoguang Li
DOI: https://doi.org/10.1021/acsami.2c04441
IF: 9.5
2022-05-23
ACS Applied Materials & Interfaces
Abstract:Ferroelectric tunnel junction (FTJ) is one promising candidate for next-generation nonvolatile data storage and neural network computing systems. In this work, the high-performance 50 nm-diameter Au/Ti/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (∼3 nm, (111)-oriented)/Nb:SrTiO<sub>3</sub> (Nb: 0.7 wt %) FTJs are achieved to demonstrate the scaling down capability of FTJ. As a nonvolatile memory, the FTJ shows eight distinct resistance states (3 bits) with a large ON/OFF ratio (>10<sup>3</sup>), and these states can be switched at a fast speed of 10 ns. Intriguingly, the long-term potentiation/depression and spike timing-dependent plasticity, that is, fundamental functions of biological synapses, can be emulated in the nanoscale FTJ-based artificial synapse. A convolutional neural network (CNN) simulation is then carried out based on the experimental results, and a high recognition accuracy of ∼93.8% on fashion product images is obtained, which is very close to the result of ∼94.4% by a floating-point-based CNN software. In particular, the FTJ-based CNN simulation also exhibits robustness to input image noises. These results indicate the great potential of FTJ for high-density information storage and neural network computing.
materials science, multidisciplinary,nanoscience & nanotechnology