Integration of Self-Assembled Monolayers for Cobalt/Porous Low-k Interconnects

Yi-Lung Cheng,Joe Kao,Hao-Wei Zhang,Bo-Jie Liao,Giin-Shan Chen,Jau-Shiung Fang
DOI: https://doi.org/10.3390/coatings14091162
IF: 3.236
2024-09-10
Coatings
Abstract:The integration of self-assembled monolayers (SAM) into cobalt (Co)/porous low-dielectric-constant (low-k) dielectric interconnects is studied in terms of electrical characteristics and reliability in this work. Experimental results indicated that SAM derived from 3-aminopropyltrimethoxysilane (APTMS) improved breakdown field, time-dependent dielectric breakdown, and adhesion for Co/porous low-k integrated interconnects. However, the improvement magnitude was not large as compared to SAM in the Cu/porous low-k integration. Therefore, the integration of SAM into Co/porous low-k interconnects has a positive effect; however, in order to further promote the efficiency of SAM for Co/porous low-k interconnects, the option of precursors for the growth of SAM is required.
materials science, multidisciplinary,physics, applied, coatings & films
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