Abstract:Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates the scaling potential for future generation devices based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional electronic properties such as anisotropy and high mobility. However, due to its ultrathin body nature, few layer black phosphorus-metal contact behaves differently than conventional Schottky barrier (SB) junctions, and the mechanisms of its carrier transport across such a barrier remain elusive. In this work, we examine the transport characteristic of metal-black phosphorus contact under varying temperature. We elucidated the origin of apparent negative SB heights extracted from classical thermionic emission model and also the phenomenon of metal-insulator transition observed in the current-temperature transistor characteristic. In essence, we found that the SB height can be modulated by the back-gate voltage, which beyond a certain critical point becomes so low that the injected carrier can no longer be described by the conventional thermionic emission theory. The transition from transport dominated by a Maxwell-Boltzmann distribution for the high energy tail states, to that of a Fermi distribution by low energy Fermi sea electrons, is the physical origin of the observed metal-insulator transition. We identified two distinctive tunneling limited transport regimes in the contact: vertical and longitudinal tunneling.

From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Anomalous Size Dependence of Optical Properties in Black Phosphorus Quantum Dots

Pressure-Induced Electronic Transition in Black Phosphorus

Pressure-induced Lifshitz transition in black phosphorus

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus

Anisotropic In-Plane Thermal Conductivity Observed in Few-Layer Black Phosphorus

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

O ct 2 01 8 Thermal transport properties of single-layer black phosphorous from extensive molecular dynamics simulations

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Anomalous doping effect in black phosphorene from first-principles calculations

Terahertz Saturable Absorption from Relativistic High-Temperature Thermodynamics in Black Phosphorus

Anisotropic Ultraviolet-Plasmon Dispersion In Black Phosphorus

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Layer-Dependent Electronic and Optical Properties of 2D Black Phosphorus: Fundamentals and Engineering

Anisotropic In-Plane Thermal Conductivity of Black Phosphorus Nanoribbons at Temperatures Higher Than 100 K.

Large Anisotropic Thermal Transport Properties Observed in Bulk Single Crystal Black Phosphorus

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures