Abstract:(a) The film was annealed 10min and shown bipolar switching. (c and e) The model for bipolar property during SET and RESET process. (b) The bipolar property for the device annealed 1h and the negative unipolar obtained. (d and f) The model for unipolar property during SET and RESET process.Display Omitted The device displayed a bipolar switching after annealing for 10min.A unipolar switching was observed when the annealed time increased to 1h.Based on the microstructural analysis, the reason was attributed to the stress.A physical model was established and well explained the experimental phenomena. Resistive random access memory (RRAM) devices are considered as one of the most promising candidates for the next generation of high-density non-volatile memories (NVMs). In this work, NiO RRAM devices were fabricated by DC magnetron sputtering. With the changing of the annealing time, different switching properties of RRAM were observed. When the sample annealed for 10min, the device displayed a bipolar switching. On the other hand, a unipolar character behavior of the device was observed when the annealed time increased to 1h. Based on the microstructural analysis, the reason was attributed to the stress. When the annealed time is short, a relative large residual stress remained in the device. It increases the diffusion barrier and traps the ion migration, correlated with a bipolar character behavior of the device. On the contrary, the stress was released when the annealed time increased up to 1h. Then, the device displayed a unipolar switching due to the high diffusion coefficient. This discovery has the potential to reveal the mechanism of switching between unipolar and bipolar of the device and open up new avenues on the research of RRAM.

Resistive Switching Characteristics of NiO Thin Films Influenced by Changes in the Diameter of Nanometer-Scale Top Electrodes

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films

Effects of Electrode Materials on Bipolar and Unipolar Switching in NiO Resistive Switching Device

Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films

Effects of Anode Materials on Resistive Characteristics of NiO Thin Films

Effects of stress on resistive switching property of the NiO RRAM device

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Size Dependent Bipolar Resistance Switching of NiO Nanodots for Low-Power and Multi-State Operation.

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Effect of Ni3+ Concentration on the Resistive Switching Behaviors of Nio Memory Devices

Magnetron Sputtered Ni-Rich Nickel Oxide Nano-Films For Resistive Switching Memory Applications

Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

Effect of Nio Growth Conditions on the Bipolar Resistance Memory Switching of Pt/Nio/Sro Structure

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Electromigration Effect of Ni Electrodes on the Resistive Switching Characteristics of Nio Thin Films

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Abnormal Resistance Switching Behaviours of NiO Thin Films: Possible Occurrence of Both Formation and Rupturing of Conducting Channels

Flexible Nanoscale Memory Device Based on Resistive Switching in Nickel Oxide Thin Film