Abstract:A novel approach, which we have chosen to name it as near-field enhanced atomic emission spectroscopy (NFE-AES), was proposed by introducing a scanning tunnelling microscope (STM) system into a laser-induced breakdown spectrometry (LIBS). The near-field enhancement of a laser-illuminated tip was utilized to improve the lateral resolution tremendously. Using the hybrid arrangement, pure metal tablets were analyzed to verify the performance of NFE-AES both in atmosphere and in vacuum. Due to localized surface plasmon resonance (LSPR), the incident electromagnetic field is enhanced and confined at the apex of tip, resulting in sub-micron scale ablation and elemental emission signal. We discovered that the signal-to-noise ratio (SNR) and the spectral resolution obtained in vacuum condition are better than those acquired in atmospheric condition. The quantitative capability of NFE-AES was demonstrated by analyzing Al and Pb in Cu matrix, respectively. Submicron-sized ablation craters were achieved by performing NFE-AES on a Si wafer with an Al film, and the spectroscopic information from a crater of ~650nm diameter was successfully obtained. Due to its advantage of high lateral resolution, NFE-AES imaging of micro-patterned Al lines on an integrated circuit of a SIM card was demonstrated with a sub-micron lateral resolution. These results reveal the potential of the NFE-AES technique in sub-microanalysis of solids, opening an opportunity to map chemical composition at sub-micron scale.

Phase Analysis of Thin Film Oxide Systems by AES and EELS

Auger Chemical Shift Analysis and Its Applications to the Identification of Interface Species in Thin Films

In situ Auger electron spectroscopy of complex oxide surfaces grown by pulsed laser deposition

Advancing characterisation with statistics from correlative electron diffraction and X-ray spectroscopy, in the scanning electron microscope

Ellipsometry Study on Nanoparticles Grown by Atomic Layer Deposition

Deciphering phase evolution in complex metal oxide thin films via high-throughput materials synthesis and characterization

Monte Carlo Simulation of Auger Electron Emission from Thin Film on Substrate

Simulation of Electron Solid Interaction and Its Application to Quantitative-Analysis by Auger-Electron Spectroscopy

Analyticity of the Phase Shift and Reflectivity of Electrons at a Metal-Semiconductor Interface

Phase identification of vanadium oxide thin films prepared by atomic layer deposition using X-ray absorption spectroscopy

Identification of local phase of nanoscale BaTiO₃ powders by high-resolution electron energy loss spectroscopy.

XANES Analysis of BCC/FCC Two-Phase Binary Alloys

Real-time, in situ spectroscopic ellipsometry for analysis of the kinetics of ultrathin oxide-film growth on MgAl alloys

Visualising emergent phenomena at oxide interfaces

Identification of Local Phase of Nanoscale BaTiO<sub>3</sub> Powders by High-Resolution Electron Energy Loss Spectroscopy

Advanced Electron Microscopy Characterisation of Al-O Coordination in Catalyst Supports

Analysis of Controlled Mixed-Phase (amorphous+microcrystalline) Silicon Thin Films by Real Time Spectroscopic Ellipsometry

Investigation of plasma electrolytic oxidation coating formed on two Al–Si–Mg alloys via advanced X-ray computed tomography

Sub-microanalysis of Solid Samples with Near-Field Enhanced Atomic Emission Spectroscopy

Phase Relationships in the Al-rich Region of the Al-Y-Zr System

Analysis of Surface and Interface Modifications of Thin Multilayered Films