Phase identification of vanadium oxide thin films prepared by atomic layer deposition using X-ray absorption spectroscopy

Yejin Kim,Gwang Yeom Song,Raju Nandi,Jae Yu Cho,Jaeyeong Heo,Deok-Yong Cho

DOI: https://doi.org/10.1039/d0ra04384b

IF: 4.036

2020-01-01

RSC Advances

Abstract:X-ray absorption spectroscopy reveals the local structures of atomic-layer-deposited vanadium oxide films subject to heat treatments.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Study of the Phase Evolution, Metal-Insulator Transition, and Optical Properties of Vanadium Oxide Thin Films

Taixing Huang,Lin Yang,Jun Qin,Fei Huang,Xupeng Zhu,Peiheng Zhou,Bo Peng,Huigao Duan,Longjiang Deng,Lei Bi

DOI: https://doi.org/10.1364/ome.6.003609

2016-01-01

Optical Materials Express

Abstract:VO2 thin films featuring a metal-insulator transition (MIT) at 68 °C with a large reversible tunability of the optical property have attracted great interest recently. Due to the complex phase and valence states of the vanadium oxides, understanding the microstructure and optical properties of this material with different oxygen stoichiometries has been challenging. In this study, we show that confocal Raman microscopy mapping can resolve the phase distribution in a large vanadium oxide thin film sample area, therefore providing a useful tool for a structure-property relationship study of this material. A new Raman peak at 166 cm−1 is observed in oxygen rich VO2 films, which forms micron size islands in the films, and is attributed to the characteristic peak of V4+/V5+ mixed valence states. The mixed valence state structure exists in a large oxygen partial pressure window during thin film fabrication. By joining the structural analysis and optical constants fitted by the Drude-Lorentz model using effective medium theory, the influence of different phases and valence states to the optical constants of the vanadium oxide thin films is clearly observed. These results provide in-depth understanding of the structure-optical property relationship of vanadium oxide thin films.
Growth and Physical Properties of Vanadium Oxide Thin Films with Controllable Phases

Ji Yanda,Zhang Yin,Gao Min,Yuan Zhen,Jin Changqing,Lin Yuan

DOI: https://doi.org/10.1557/opl.2013.507

2013-01-01

Abstract:Vanadium oxides thin films with variable oxidation states have attracted great attention due to their unique electrical, optical properties and many important applications in microelectronics, infrared optical devices, and energy harvest systems. However, to fabricate vanadium oxide thin films with controllable phases and desired transport properties is still a challenge by using a chemical solution deposition (CSD) technique. In this paper, we report that vanadium oxide thin films with well controlled phases such as rhombohedral V 2 O 3 and monoclinic VO 2 could be synthesized on Al 2 O 3 (0001) substrates using a CSD technique ---- polymer assisted deposition (PAD). Both V 2 O 3 and VO 2 thin films can be well controlled with good epitaxial quality by optimizing the fabrication parameters. The electrical resistivity changes 3∼4 orders of magnitude at metal insulator transition for both epitaxial V 2 O 3 and VO 2 thin films. The correlation between the physical properties and the microstructures of the films will be discussed.
Phase evolution and thermochromism of vanadium oxide thin films grown at low substrate temperatures during magnetron sputtering

Maodong Zhu,Dongping Zhang,Shuyun Jiang,Shuguang Liu,Hongji Qi,Yu Yang

DOI: https://doi.org/10.1016/j.ceramint.2021.02.115

IF: 5.532

2021-06-01

Ceramics International

Abstract:Vanadium oxides (VOx) have been studied extensively for applications in thermochromic materials, electrochomics, and infrared detectors due to their unique phase transition characteristics. However, various vanadium oxide phases usually occur under different deposition conditions due to their particularly complex vanadium-oxygen system. In this research, V3O7, VO2(B), VO2(M), and V2O5 thin films were obtained as pure or mixed phases by controlling the substrate temperatures between 250 °C and 400 °C during magnetron sputtering. The microstructure and phase composition of vanadium oxide thin films were characterized and analyzed using X-ray diffraction and Raman spectroscopy. The phase evolution was dependent on the substrate temperature and could be clarified. Metastable V3O7 and VO2(B) phases were obtained at substrate temperatures of 250–300 °C, while stable VO2 and V2O5 phases were obtained at 350–400 °C. The surface morphology and optical properties of vanadium oxide thin films with different substrate temperatures were investigated in detail. Our results provide methods for transforming vanadium oxide phases under well controlled substrate temperatures.

materials science, ceramics
Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

S. S. Majid,D. K. Shukla,F. Rahman,R. J. Choudhary,D. M. Phase

DOI: https://doi.org/10.1063/1.4917609

2015-01-01

AIP Conference Proceedings

Abstract:We present here the structural and electrical properties of the thin films of V2O3 (Vanadium sesquioxide) and V5O9. Both these oxide phases, V2O3 and V5O9, have beenachieved on (001) orientedSi substrate using the V2O5 target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V2O3 and V5O9 phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V2O3 and V5O9.
Raman spectroscopy of Wadsley phases of vanadium oxide

Petr Shvets,Alexander Krylov,Ksenia Maksimova,Goikhman

DOI: https://doi.org/10.1002/jrs.6644

IF: 2.727

2024-01-16

Journal of Raman Spectroscopy

Abstract:Analysis of the available literature concerning Wadsley phases of vanadium oxides (VnO2n + 1) revealed that Raman studies of these materials are full of contradictions, misinterpretations, and low‐quality data. We produced all Wadsley phases by annealing amorphous oxide films in controllable atmosphere and carefully measured Raman spectra of the produced samples. Our investigations included temperature‐dependent measurements to study low‐temperature phase transitions in VO2 (B) and V6O13. We summarize the current knowledge on crystal structures, synthesis, applications, and Raman spectroscopy of Wadsley phases of vanadium oxide, including VO2 (B), V6O13, V4O9, V3O7, and V2O5. While these oxides have garnered significant attention for potential energy storage applications and have been studied for decades, there remains inconsistency in data regarding their characteristic Raman spectra. To address this, we synthesized a series of Wadsley phases by physical vapor deposition of amorphous vanadium oxide films and subsequent annealing in a controlled environment. X‐ray diffraction studies confirmed the formation of VO2 (B), V6O13, V4O9, and V3O7. We meticulously measured the room‐temperature Raman spectra of these phases, offering robust reference data for the easy identification of vanadium oxides in unknown samples. Finally, we studied low‐temperature phase transitions in VO2 (B) and V6O13.

spectroscopy
Raman spectra analysis of vanadium dioxide thin film deposited by polymer-assisted deposition method

Chang Lu,Taisong Pan,Min Gao,Yuan Lin

DOI: https://doi.org/10.1109/eltech.2018.8401429

2018-01-01

Abstract:Raman microscopy was widely utilized to study the temperature dependent evolution of vibration modes of vanadium dioxide thin films in the vicinity of phase transition. In this study, the temperature dependent Raman spectra characterization was performed on epitaxial growth vanadium dioxide (VO 2 ) thin film, which was fabricated on m-sapphire substrate using polymer-assisted deposition method with a thickness of 50 nm. The results show that the characteristic phonon modes of VO2 monoclinic phase got weakened with the increase of temperature and finally disappeared well above the phase transition. Then, by comparing the Raman spectra in heating and cooling cycles under dependent temperatures, a phase diagram across the metal-insulator transition was proposed identifying monoclinic, intermediate, and rutile regimes. The intermediate region was attributed to the co-existence of monoclinic and rutile phase, which might be caused by strains and defects within the grains of the film. Moreover, MIT of epitaxial growth VO2 film observed in this study is much sharper than that of polycrystalline film reported by other workers, indicating the MIT property is closely related to the crystal quality of VO 2 thin film.
PHASE TRANSFORMATION AND R–T CHARACTERISTICS OF VACUUM ANNEALED VANADIUM OXIDE THIN FILMS

Y. L. Wang,M. C. Li,L. C. Zhao

DOI: https://doi.org/10.1142/s0218625x08010956

2008-01-01

Surface Review and Letters

Abstract:Polycrystalline vanadium oxide ( VO x) thin films with mixed phases of V 6 O 13 + VO 2 (M) are deposited onto p-doped Si (100) substrates at 430°C using magnetron sputtering. By vacuum annealing on as-deposited VO x thin films at 450°C, at different annealing times we obtained nanoscale polycrystalline VO x thin films with two or more mixed phases. With the annealing time increasing, the phases of the films underwent the following transformation: V 6 O 13 + VO 2 ( M ) → VO 2 ( M ) + VO 2 ( B ) → VO 2 ( B ) + VO 2 ( M ) + V 5 O 9 → V 4 O 7 + V 5 O 9. The surface of VO x thin films prepared in different conditions is of high quality with mean grain size ranging from 80 to 300 nm and the R a being about 20nm. The lowest temperature coefficient of resistance at ambient temperature (20°C) of -2% K-1 is found in the VO x thin film annealed at 450°C for 8 h with mixed phases of VO 2 ( M ) + VO 2 ( B ), which can meet the needs of microbolometer materials.
A review of Raman spectroscopy of vanadium oxides

Petr Shvets,Olga Dikaya,Ksenia Maksimova,Alexander Goikhman

DOI: https://doi.org/10.1002/jrs.5616

IF: 2.727

2019-05-15

Journal of Raman Spectroscopy

Abstract:This review summarizes Raman scattering data for different stable and metastable phases of vanadium oxides. We analyze literature data on crystal structures existing in the binary vanadium‐oxygen system. If available, we combine these data with experimental Raman spectra and relations of vibrational modes with the atomic arrangements and motions in crystals. Further, we employ arc sputtering to produce vanadium oxide films, including α and β‐vanadium, V14O6, VO, V2O3, V3O5, several phases of VO2, V6O13, V3O7, and V2O5, as confirmed by X‐ray diffraction analysis. All the films are studied using Raman spectroscopy: low‐ and high‐temperature V3O5 and VOx (1.67 3O5 spectrum takes place along the phase transition occurring at approximately 140 °C. Moreover, we describe differences between the spectra of VO2 polymorphs produced without doping impurities, VO2 (M1), VO2 (M2), and VO2 (T). Finally, we analyze conflicting data on V7O16 and V3O7 and provide an explanation of the observed spectra. Overall, 21 spectra are identified for 53 known phases. Our work is aimed at laying the groundwork for easy identification of vanadium oxide phases in thin films, using Raman spectroscopy.

spectroscopy
Photoinduced Strain Release and Phase Transition Dynamics of Solid-Supported Ultrathin Vanadium Dioxide

Xing He,Napat Punpongjareorn,Weizheng Liang,Yuan Lin,Chonglin Chen,Allan J. Jacobson,Ding-Shyue Yang

DOI: https://doi.org/10.1038/s41598-017-10217-0

IF: 4.6

2017-01-01

Scientific Reports

Abstract:The complex phase transitions of vanadium dioxide (VO 2 ) have drawn continual attention for more than five decades. Dynamically, ultrafast electron diffraction (UED) with atomic-scale spatiotemporal resolution has been employed to study the reaction pathway in the photoinduced transition of VO 2 , using bulk and strain-free specimens. Here, we report the UED results from 10-nm-thick crystalline VO 2 supported on Al 2 O 3 (0001) and examine the influence of surface stress on the photoinduced structural transformation. An ultrafast release of the compressive strain along the surface-normal direction is observed at early times following the photoexcitation, accompanied by faster motions of vanadium dimers that are more complex than simple dilation or bond tilting. Diffraction simulations indicate that the reaction intermediate involved on picosecond times may not be a single state, which implies non-concerted atomic motions on a multidimensional energy landscape. At longer times, a laser fluence multiple times higher than the thermodynamic enthalpy threshold is required for complete conversion from the initial monoclinic structure to the tetragonal lattice. For certain crystalline domains, the structural transformation is not seen even on nanosecond times following an intense photoexcitation. These results signify a time-dependent energy distribution among various degrees of freedom and reveal the nature of and the impact of strain on the photoinduced transition of VO 2 .
Deep-scan Analysis of Composition and Valence of Vanadium Oxide Thin Film

魏雄邦,蒋亚东,吴志明,廖家轩,贾宇明,田忠

DOI: https://doi.org/10.3321/j.issn:1005-023X.2009.22.001

2009-01-01

Abstract:Vanadium oxide thin film with the thickness of 500nm is prepared. Deep-scan analysis of composition and valence of the film is made. The deep-scan analysis reveal that with scan depth increasing,the O/V ratio and the vanadium valence of the film changes gradiently,especially within scan depth of 80nm. It is believed that the phenomena above are correlated with the stability of the vanadium oxides and the preparing technology.
Effect of porous morphology on phase transition in vanadium dioxide thin films

hui yan xu,yu hong huang,jin ping li,fei ma,k w xu

DOI: https://doi.org/10.1116/1.4929541

2015-01-01

Abstract:Vanadium oxide (VO2) thin films were prepared on Si (100) substrates by direct current magnetron sputtering at room temperature, and then, postannealing was conducted at 450 degrees C for 2 h in vacuum. Structural characterizations demonstrated that the thin films exhibited porous morphology upon thermal annealing and the porosity and pore size depended on the oxygen flow rate in the process of film fabrication. Raman spectra were measured in the temperature range of 303-343 K, and resistance measurement was conducted in the temperature range of 293-363 K, to study the influence of porous morphology on the phase transition in VO2 thin films. It was illustrated that the porous morphology could provide a free space to release the stress induced in the monoclinic-to-tetragonal phase transition of VO2, and lower the transition temperature to a certain degree. (C) 2015 American Vacuum Society.
Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film

Peng-Fei Wang,Qianqian Hu,Tan Zheng,Yu Liu,Xiaofeng Xu,Jia-Lin Sun

DOI: https://doi.org/10.3390/cryst10090764

IF: 2.7

2020-01-01

Crystals

Abstract:Vanadium dioxide (VO2), due to its electrically induced metal-to-insulator transition with dramatic changes in electrical and optical properties, is considered to be a powerful material for electro-optical devices. However, there are still some controversies about phase transition mechanism under voltage. Here, based on optical characterizations on VO2 crystal nanofilm during the whole process of phase transition, temporal evolution and spatial distribution of changes in electricity, optic and temperature are investigated simultaneously, to explore the mechanism. The variations of Raman spectrum and reflected spectrum, and changes in current and temperature are evidences for occurrence of phase transition, which exhibit different changing behaviors with time and space. These results offer a better understanding of the phase transition mechanism, implying that lattice structure of VO2 changes gradually after applying voltage until the structure is completely converted to metallic structure, which causes a rapid increase in carrier density, resulting in a rapid change in current, reflected spectrum and temperature. Temperature rise before phase transition and applied electric field alone are not enough for triggering metal-insulator transition, but these two factors can act synergistically on structural transformation to induce phase transition.
Stabilization of the VO2(M2) Phase and Change in Lattice Parameters at the Phase Transition Temperature of WXV1- XO2 Thin Films

Artitsupa Boontan,Eric Kumi Barimah,Paul Steenson,Gin Jose

DOI: https://doi.org/10.1021/acsami.3c11484

2023-11-08

Abstract:Various methods have been used to fabricate vanadium dioxide (VO2) thin films exhibiting polymorph phases and an identical chemical formula suited to different applications. Most fabrication techniques require post-annealing to convert the amorphous VO2 thin film into the VO2 (M1) phase. In this study, we provide a temperature-dependent XRD analysis that confirms the change in lattice parameters responsible for the metal-to-insulator transition as the structure undergoes a monoclinic to the tetragonal phase transition. In our study, we deposited VO2 and W-doped VO2 thin films onto silica substrates using a high repetition rate (10 kHz) fs-PLD deposition without post-annealing. The XRD patterns measured at room temperature revealed stabilization of the monoclinic M2 phase by W6+ doping VO2. We developed an alternative approach to determine the phase transition temperatures using temperature-dependent X-ray diffraction measurements to evaluate the a and b lattice parameters for the monoclinic and rutile phases. The a and b lattice parameters versus temperature revealed phase transition temperature reduction from ∼66 to 38 °C when the W6+ concentration increases. This study provides a novel unorthodox technique to characterize and evaluate the structural phase transitions seen on VO2 thin films.
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert Rampelberg,Marc Schaekers,Koen Martens,Qi Xie,Davy Deduytsche,Bob De Schutter,Nicolas Blasco,Jorge Kittl,Christophe Detavernier

DOI: https://doi.org/10.1063/1.3579195

IF: 4

2011-04-18

Applied Physics Letters

Abstract:Thin films of vanadium dioxide (VO2) have been grown by a low temperature atomic layer deposition process at 150 °C using tetrakis[ethylmethylamino]vanadium as a vanadium source and ozone as reactant gas. Films deposited on SiO2 were amorphous, but during a thermal treatment at 450 °C tetragonal VO2(R) was formed. During in situ x-ray diffraction measurements, the semiconductor–metal transition was observed as a reversible transition between VO2(M1) and VO2(R) near 67 °C. Correlated with this phase change, a reversible change in resistivity was observed of more than two orders of magnitude for a film of 42 nm thickness.

physics, applied
Study on Optical and Electrical Switching Properties and Phase Transition Mechanism of Mo6+-doped Vanadium Dioxide Thin Films

Shiqing Xu,Hongping Ma,Shixun Dai,Zhonghong Jiang

DOI: https://doi.org/10.1023/b:jmsc.0000011503.22893.f4

2003-01-01

Abstract:In the present work using V2O5 and MoO3 powders as precursors, a novel method, the inorganic sol-gel method, was developed to synthesize Mo6+ doped vanadium dioxide (VO2) thin films. The structure, valence state, phase transition temperature, magnitude of resistivity change and change in optical transmittance below and above the phase transition of these films are determined by XRD, XPS, four-point probe equipment and spectrophotometer. The results showed that the main chemical composition of the films was VO2, the structure of MoO3 in the films didn't change, and the phase transition temperature of the VO2 was obviously lowered with increasing MoO3 doped concentration. The magnitude of resistivity change and change in optical transmittance below and above phase transition were also decreased, of which the magnitude of resistivity change was more distinct. However, when the MoO3 concentration was 5 wt%, the magnitude of resistivity change of doped thin films still reached more than 2 orders, and the change in optical transmittance below and above phase transition was maintained. Analysis showed that the VO2 doped films formed local energy level, and then reduced the forbidden band gap of VO2 as the donor defect changing its optical and electrical properties and lowering the phase transition temperature.
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Marc Currie,Michael A Mastro,Virginia D Wheeler

DOI: https://doi.org/10.3791/57103

2018-05-23

Abstract:Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 °C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (≤150 °C) growth of ultrathin films (100-1000 Å) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10-4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films' optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.
Role of Microstructures on the M1-M2 Phase Transition in Epitaxial VO2 Thin Films

Yanda Ji,Yin Zhang,Min Gao,Zhen Yuan,Yudong Xia,Changqing Jin,Bowan Tao,Chonglin Chen,Quanxi Jia,Yuan Lin

DOI: https://doi.org/10.1038/srep04854

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications.
Thermochromatic vanadium dioxide (VO2) thin films synthesized by atomic layer deposition and post-treatments

Jianguo Li,Zhongwei An,Wangle Zhang,Longfei Hui,Zhao Qin,Hao Feng

DOI: https://doi.org/10.1016/j.apsusc.2020.147108

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:As a thermochromatic material showing metal-insulator transition behavior below 70 degrees C, crystalline films of vanadium dioxide (VO2) have potential applications in many fields. In this work, amorphous vanadium oxide (VxOy) films were deposited on glass substrates by atomic layer deposition (ALD). The film growth mechanism and growth rate were studied by quartz crystal micro balance, and a constant growth rate of about 0.5 angstrom/cycle was obtained. X-ray diffraction and X-ray photoelectron spectroscopy characterizations demonstrated that the as-deposited ALD VxOy film was amorphous with mostly V4+ oxidation state. Crystalline VO2O5 films were prepared by annealing the as-deposited ALD VxOy films at 300 degrees C under O-2 flow. Subsequently, different annealing methods and conditions were tested for transforming V2O5 films to VO2 films. It turned out that high purity crystalline VO2 films could be obtained by heating the V2O5 films in an oxidizing environment at a reduced pressure. Results of transmittance measurements revealed that these crystalline VO2 films had excellent thermochromatic properties with a reversible change in transmittance at about 65 degrees C.
Epitaxial Growth and Metal-Insulator Transition of Vanadium Oxide Thin Films with Controllable Phases

Y. D. Ji,T. S. Pan,Z. Bi,W. Z. Liang,Y. Zhang,H. Z. Zeng,Q. Y. Wen,H. W. Zhang,C. L. Chen,Q. X. Jia,Y. Lin

DOI: https://doi.org/10.1063/1.4745843

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Vanadium oxide thin films with well controlled phases such as rhombohedra V2O3 and monoclinic VO2 were synthesized on Al2O3 (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V2O3 and VO2 films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V2O3 and VO2 films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745843]
Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation

P Ashok,Yogesh Singh Chauhan,Amit Verma

DOI: https://doi.org/10.48550/arXiv.2105.10264

2021-05-21

Applied Physics

Abstract:Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation method to oxidize RF-sputtered Vanadium films. Structural, surface-morphology and phase-transition properties of the oxidized films as a function of oxidation duration are presented. Phase-pure VO2 films are obtained by oxidizing ~130 nm Vanadium films in short oxidation duration of ~30 seconds. Compared to previous reports on VO2 synthesis using atmospheric oxidation of Vanadium films of similar thickness, we obtain a reduction in oxidation duration by more than one order. Synthesized VO2 thin film shows resistance switching of ~3 orders of magnitude. We demonstrate optical reflectance switching in long-wave infrared wavelengths in VO2 films synthesized using atmospheric oxidation of Vanadium. The extracted refractive index of VO2 in the insulating and in the metallic phase is in good agreement with VO2 synthesized using other methods. The considerable reduction in oxidation time of VO2 synthesis while retaining good resistance and optical switching properties will help in integration of VO2 in limited thermal budget processes, enabling further applications of this phase-transition material.

Phase identification of vanadium oxide thin films prepared by atomic layer deposition using X-ray absorption spectroscopy

Study of the Phase Evolution, Metal-Insulator Transition, and Optical Properties of Vanadium Oxide Thin Films

Growth and Physical Properties of Vanadium Oxide Thin Films with Controllable Phases

Phase evolution and thermochromism of vanadium oxide thin films grown at low substrate temperatures during magnetron sputtering

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

Raman spectroscopy of Wadsley phases of vanadium oxide

Raman spectra analysis of vanadium dioxide thin film deposited by polymer-assisted deposition method

PHASE TRANSFORMATION AND R–T CHARACTERISTICS OF VACUUM ANNEALED VANADIUM OXIDE THIN FILMS

A review of Raman spectroscopy of vanadium oxides

Photoinduced Strain Release and Phase Transition Dynamics of Solid-Supported Ultrathin Vanadium Dioxide

Deep-scan Analysis of Composition and Valence of Vanadium Oxide Thin Film

Effect of porous morphology on phase transition in vanadium dioxide thin films

Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film

Stabilization of the VO2(M2) Phase and Change in Lattice Parameters at the Phase Transition Temperature of WXV1- XO2 Thin Films

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Study on Optical and Electrical Switching Properties and Phase Transition Mechanism of Mo6+-doped Vanadium Dioxide Thin Films

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Role of Microstructures on the M1-M2 Phase Transition in Epitaxial VO2 Thin Films

Thermochromatic vanadium dioxide (VO2) thin films synthesized by atomic layer deposition and post-treatments

Epitaxial Growth and Metal-Insulator Transition of Vanadium Oxide Thin Films with Controllable Phases

Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation