Abstract:Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical spin--momentum locking of the surface states arises from intrinsic spin--orbit coupling (SOC) and provides topological protection to the surface states against scattering from external perturbations, like defects and non-magnetic impurities. Breaking the topological protection of surface states of topological insulators is an essential prerequisite for exploring their applications. Rare-earth ions typically exhibit larger magnetic moments than transition-metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Bi$_2$Se$_3$ is an interesting material; on the one hand, it has semiconducting properties when it is thin sheets; on the other hand, it's a topological insulator when the structure has a minimum of six quintuple layers (QLs), with diverse applications in photothermal, thermoelectric, and optical properties. Here, we have developed a controlled colloidal synthesis with low temperature and a cost-effective process for the synthesis of undoped and Eu-doped 2D layered Bi$_2$Se$_3$ nanosheets. Scanning tunneling spectroscopy measurements demonstrated a correlation between the shift of Dirac point position and the dopant content, which has been theoretically established by the band structure calculation. At low temperatures below 10K, for the 10\% Eu-doped sample, magnetic data suggests an antiferromagnetic ordering in the sample, which may be the contribution of the mixed valence state of Europium. Our results support that antiferromagnetic exchange interaction can exist in topological surface states in rare-earth Eu-doped Bi$_2$Se$_3$, which can open a new window to novel quantum phenomena.

Pyridine intercalated Bi$_2$Se$_3$ heterostructures: controlling the topologically protected states

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Manipulating Topological Properties in Bi$_2$Se$_3$/BiSe/TMDC Heterostructures with Interface Charge Transfer

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

Pressure Induced Topological Phase Transition in Layered Bi2S3

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Pb_{5}Bi_{24}Se_{41}: A New Member of the Homologous Series Forming Topological Insulator Heterostructures

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

Monolayer superconductivity and tunable topological electronic structure at the Fe(Te,Se)/Bi2Te3 interface

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$

Bi$_{2}$Se$_{3}$ thin films heteroepitaxially grown on $α$-RuCl$_{3}$