Abstract:The transient electrothermal (TET) technique was developed and has been widely used for measuring the thermal diffusivity of fiber- and film-like materials at the micro/nanoscale. Upon step-current heating, the measured voltage-time (V V-t) t ) of the sample usually follows a sole increasing or decreasing trend, depending on the temperature coefficient of its electrical resistivity (BT B T = d rho e/dT, e / dT, rho e : electrical resistivity, T : temperature). Past physical mode for the V-t t profile is based on an assumption that BT T is constant during TET measurement, which applies to a large variety of materials. However, for semiconductive materials, BT T depends on the charge carrier density and scattering time, and both vary with temperature. Therefore, BT T has very strong nonlinear change with temperature, sometimes changes sign during TET measurement. This leads to abnormal V-t t profiles that have never been addressed well, thereby making TET measurement not applicable for such scenarios. In this work, a new physical model is developed to consider the strong nonlinear relation between rho e e and T to the third order. Our numerical modeling firmly proves the validity of this new model. Thin films of graphene (GreF) and single- walled carbon nanotube (SWCNTs) mat are measured using the TET technique over a wide temperature range: 84.5-690.9 K for the GreF, and 12-290 K for the SWCNT film. At a specific temperature for each sample, a semiconductive-to-metallic transition comes about and manifests in the resistance-temperature response, hence leading to abnormal TET signals. These TET signals are perfectly fitted using our nonlinear BT T T model to determine alpha . Intriguingly, the determined alpha of the GreF for the transition phase follows the overall alpha T trend, confirming the robustness of the model. The obtained alpha T trend is interpreted well using the thermal reffusivity theory and structure deterioration under temperature change. This work significantly extends the capability of TET to semiconductors for alpha measurement. Also, the new methodology developed for obtaining alpha at zero temperature rise significantly improves the measurement control and accuracy.

ALTP heat flux sensor: the compensation of the ordinary Seebeck effect through a new structure

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

Temperature compensation of optical alternating magnetic field sensor via a novel method for on-line measuring

Temperature Compensation Method for Tunnel Magnetoresistance Micro-Magnetic Sensors Through Reference Magnetic Field

A Thermal Drift Compensation Method for Precision Sensors Considering Historical Temperature State

Simulation and Experimental Study of SAW Temperature Sensor Based on ALN Piezoelectric Layer

Development and Performance Analysis of an Atomic Layer Thermopile Sensor for Composite Heat Flux Testing in an Explosive Environment

The atomic layer thermopile heat flux sensor based on the inclined epitaxial YBa2Cu3O7-δ films

Significant improvement in sensitivity of an anomalous Nernst heat flux sensor by composite structure

Heat flux sensing by anomalous Nernst effect in Fe-Al thin films on a flexible substrate

Design and Fabrication of a Thermopile-Based Thin Film Heat Flux Sensor, Using a Lead—Substrate Integration Method

A transient heat flux sensor for PbTe thin films based on transverse Seebeck effect

Thermal airflow sensor design and temperature compensation research based on the thermostatic method

Ultra-High Sensitivity Thin Film Heat Flux Sensor for Battery Thermal Runaway Monitoring

Precise measurement of absolute Seebeck coefficient from Thomson effect using ac-dc technique

Thermal Diffusivity Characterization of Semiconductive 1D Micro/nanoscale Structures

In Situ Integration of High-Temperature Thin-Film Sensor for Precise Measurement of Heat Flux and Temperature on Superalloy Substrate

Error correction for temperature measurement in insulating material: Application to the aluminum electrolysis cell

Temperature field analysis and compensation improvement of load cell

Single-Ended Eddy Current Micro-Displacement Sensor with High Precision Based on Temperature Compensation