Surface Recombination and Peltier Heat Generation in Kesterite Thin Film Solar Cells due to Defect Increment under Elevated Heat

Ali Hajjiah
DOI: https://doi.org/10.1016/j.ijleo.2024.171633
IF: 3.1
2024-01-21
Optik
Abstract:Thermal instability is the major barrier against the commercialization and upscaling of thin film solar cells. Heat generation in thin film solar cells occurs both at normal operation conditions and under stress conditions. In this paper, we developed a simulation model to investigate the heat generation in CZTSSe Kesterite thin film solar cells by coupling the optical, electrical, and thermal modules in the COMSOL simulation package. This strongly coupled model allows investigation of the two main heat generation factors in solar cell structure: Surface recombination heat and Peltier heat. These factors have been rarely analyzed in literature but can be significantly detrimental to the solar cell structure especially when the temperature of the cell rises over time under operation conditions. We extended our simulation to insert the defect growth at the Surface and bulk of the CZTSSe layer of the cell for elevated temperatures (400 o C. for 1000 hours) and calculate the heat generation at CZTSSe/Mo(S,Se) 2 and CZTSSe/CdS interfaces and at the deletion width of the junction where Surface recombination heat and Peltier heat generated from electrons and holes are generated. The simulation shows that Peltier heat generation from electrons is more dominant than Peltier heat from holes while the surface recombination heat is significantly more dominant compared to Peltier heat generation.
optics
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