Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Physical Mechanisms for the Unique Optical Properties of Chalcogen-Hyperdoped Silicon

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Hybrid functional studies on impurity-concentration-controlled band engineering of chalcogen-hyperdoped silicon

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Large Enhancement of Sub-Band-Gap Light Absorption of Sulfur Hyperdoped Silicon by Surface Dome Structures

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy

Study on the Fermi level of microstructured Silicon with impurities introduced by chalcogenides and their affect on solar cell efficiency

Ab Initio Investigation of Amorphous and Crystalline Arsenic Sesqui‐Chalcogenides: Optical Properties Explained by Metavalent Bonding

Valence Band Structure of Chalcogenide Obtained by X‐Ray Photoelectron Spectroscopy and Etching Technique

Optically decomposed near-band-edge structure and excitonic transitions in Ga₂S₃

Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom

Hyperspectral absorption of semiconductor monolayer crystals

Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Helium Incorporation Stabilized Direct-gap Silicides

Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures