Abstract:An extended surface band‐enabled lasing emission has been realized from sulfur quantum dots. The reconfigurable perturbation to surface gain of sulfur quantum dots allows for the demonstration of lasing wavelength switching using a single inorganic gain material. The development of a lasing wavelength switch, particularly from a single inorganic gain material, is challenging but highly demanded for advanced photonics. Nonetheless, all current lasing emission of inorganic gain materials arises from band‐edge states, and the inherent fixed bandgap limitation of the band‐edge system leads to the inaccessibility of lasing wavelength switching from a single inorganic gain material. Here the realization of a single inorganic gain material‐based lasing wavelength switch is reported by proposing an alternative lasing emission strategy, that is, lasing emission from surface gain. Previous efforts to achieve surface‐gain‐enabled lasing emission have been hindered by the limited gain volume provided by surface states due to the broad emission bandwidth and/or low emission efficiency. This challenge is overcome by introducing extended surface bands onto the surface of sulfur quantum dots. The extended surface bands contribute to a high photoluminescence quantum yield and narrow emission bandwidth, thereby providing sufficient gain volume and facilitating stimulated emission. When combined with whispering gallery mode microcavity, surface gain enabled lasing emission manifests an ultralow threshold of 8.3 μJ cm−2. Remarkably, the reconfigurable perturbation to surface gain, facilitated by molecular affinity, allows for the realization of the lasing wavelength switch from a single inorganic gain material.

Large Enhancement of Sub-Band-Gap Light Absorption of Sulfur Hyperdoped Silicon by Surface Dome Structures

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Pulsed rapid thermal process for tailoring the surface sulfurization of CIGSe thin film at low temperature

Sulfur-Doped Silicon Photodiode by Ion Implantation and Femtosecond Laser Annealing

Defect engineering for improved thermal stability of sulfur hyperdoped silicon

Near-Unity Below-Band-Gap Absorption by Microstructured Silicon

Hyperdoped silicon: Processing, properties, and devices

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Enhanced Performance of Close-Spaced Sublimation Processed Antimony Sulfide Solar Cells via Seed-Mediated Growth

Research on Mechanism for High Light Absorption of Micro-Structured Silicon

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Extended Surface Bands Enabled Lasing Emission and Wavelength Switch from Sulfur Quantum Dots

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Remarkable Quality Improvement of As-Grown Monolayer MoS2 by Sulfur Vapor Pretreatment of SiO2/Si Substrates

Large-Scale Black Silicon Induced by Femtosecond Laser Assisted With Laser Cleaning

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

Physical Mechanisms for the Unique Optical Properties of Chalcogen-Hyperdoped Silicon

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Surface Engineering Enables Efficient AgBiS2 Quantum Dot Solar Cells.