Valley splitting in the antiferromagnetic heterostructure MnPSe 3 /WSe 2

Bing-Jie Wang,Yu-Yun Sun,Ju Chen,Weiwei Ju,Yi-Peng An,Shi-Jing Gong

DOI: https://doi.org/10.1039/d0tc03065a

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The structure and valley splitting of antiferromagnetic heterostructure MnPSe 3 /WSe 2 .

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Superior Electronic Structure in Two-Dimensional MnPSe 3 /mos2 Van Der Waals Heterostructures

Qi Pei,Yan Song,Xiaocha Wang,Jijun Zou,Wenbo Mi

DOI: https://doi.org/10.1038/s41598-017-10145-z

IF: 4.6

2017-01-01

Scientific Reports

Abstract:We explore the electronic structure of two-dimensional (2D) MnPSe 3 /MoS 2 van der Waals (vdW) heterostructures based on density functional theory. A novel spin splitting at the valance band maximum of MnPSe 3 appears in some specific stacking models due to Mn d orbital hybridization. The simultaneous spin and valley splitting can be achieved by interfacial coupling, which is attractive for manipulation of the valley and spin degrees of freedom. More importantly, due to the antiferromagnetic ordering of manganese, the opposite spin moments at K and K′ valleys can be observed by transforming configurations, which realizes the tunable spin splitting states. Our theoretical work opens up the opportunities of valley and spin related applications of MnPSe 3 /MoS 2 vdW heterostructures and offers a practical avenue for exploring novel devices based on the spin and valley degrees of freedom.
Enhanced Valley Splitting in Monolayer WSe2 Due to Magnetic Exchange Field

Chuan Zhao,Tenzin Norden,Peiyao Zhang,Puqin Zhao,Yingchun Cheng,Fan Sun,James P. Parry,Payam Taheri,Jieqiong Wang,Yihang Yang,Thomas Scrace,Kaifei Kang,Sen Yang,Guo-xing Miao,Renat Sabirianov,George Kioseoglou,Wei Huang,Athos Petrou,Hao Zeng

DOI: https://doi.org/10.1038/nnano.2017.68

IF: 38.3

2017-01-01

Nature Nanotechnology

Abstract:Magnetic exchange field from an EuS substrate breaks the valley degeneracy for monolayer WSe 2 , leading to enhanced valley splitting.
Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Xikui Ma,Xiaofei Shao,Yingcai Fan,Jian Liu,Xukun Feng,Lei Sun,Mingwen Zhao

DOI: https://doi.org/10.1039/d0tc03712e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:The modulation of valley splitting is not only of fundamental interest but is also crucial to valleytronics. Generally, valley splitting stems from spin-orbit coupling and the absence of time-reversal symmetry, which are irreversible. In this work, we proposed another approach to achieve static and reversible valley splitting via an antiferromagnetic/ferroelectric heterostructure. The heterostructure is composed of an antiferromagnetic VTe2 bilayer deposited on a ferroelectric substrate (Ga2S3). The electric field of the ferroelectric substrate lifts the valley degeneracy, leading to valley splitting, which is dependent on the intensity of the electric field. With the increase of substrate thickness, the valley splitting of the VTe2 bilayer can attain 132 meV. More interestingly, both the Berry curvature and the carrier spin are reversed by switching the ferroelectric direction of the substrate, resulting in tunable anomalous valley Hall effect. Our computational results offer a promising strategy for all-electrical reading and writing memory devices.
A type-II MnPSe 3 /GeC heterostructure with tunable spin and valley splitting

Tongwei Li,Jing Chen,Kai Tian,Xin Jiang,Xinyao Wu,Haisheng Li,Weiwei Ju

DOI: https://doi.org/10.1016/j.rinp.2023.106455

IF: 4.565

2023-04-17

Results in Physics

Abstract:The ternary chalcogenide MnPSe 3 monolayer recently gets a lot of attention because of its two nonequivalent energy valleys. The existence of spin-orbit coupling (SOC) effect can cause the valley splitting of around 24 meV. However, the spin degeneracy is still kept in MnPSe 3 monolayer owing to the antiferromagnetic coupling between Mn 2+ ions. The interlayer coupling effect in the van der Waals (vdW) heterostructures can break the symmetry of MnPSe 3 and induce the spin splitting. Here, we simulate the MnPSe 3 /GeC vdW heterostructure and investigate the effects of the stacking and interlayer coupling effect on both spin and valley splitting. The excitation mode of valley excitons is greatly related to the stacking of heterostructures. The interlayer excitons can only be formed in one of the configurations with C3 symmetry according to optical selection transition rule. The interlayer coupling effect is modulated by changing interlayer distance. With vertical compressive strain (-20%), the spin and valley splitting higher than 50 meV and 30 meV can be obtained in MnPSe 3 /GeC vdW heterostructures, respectively. This study suggests that the stacking and vertical strain are both efficient approaches to modulate the spin and valley splitting through the interlayer coupling effect in the vdW heterostructures.

physics, multidisciplinary,materials science
Spin–valley splitting and spontaneous valley polarization in antiferromagnetic Mn2P2X3Y3 monolayers

Yushuo Xu,Hongling Liu,Ying Dai,Baibiao Huang,Wei Wei

DOI: https://doi.org/10.1063/5.0146469

IF: 4

2023-06-12

Applied Physics Letters

Abstract:In the current stage, valley-contrasting physics is mainly rooted in nonmagnetic and/or ferromagnetic hexagonal lattices and is rarely used to observe the simultaneous spin and valley polarization in antiferromagnetic materials. In this work, we propose a general scheme that can be achieved easily in experiments to break the PT joint symmetry of antiferromagnetic structures, that is, introducing an out-of-plane potential gradient to realize spin–valley splitting and spontaneous valley polarization. In combination of the model analysis and first-principles calculations, we translate the concept into Mn2P2X3Y3 monolayers and clarify the valley-related physics. It is obvious that our finding significantly extends the scope of valleytronics in both theory and experiments.

physics, applied
Tunable valley splitting and anomalous valley Hall effect in VTe2/Ga2S3 heterostructures

Xikui Ma,Xiaofei Shao,Yingcai Fan,Jian Liu,Xukun Feng,Lei Sun,Mingwen Zhao

DOI: https://doi.org/10.1039/d0tc03712e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:The modulation of valley splitting is not only of fundamental interest but is also crucial to valleytronics.
Valley Splitting in the Van Der Waals Heterostructure WSe2/CrI3 : the Role of Atom Superposition

Zhiya Zhang,Xiaojuan Ni,Huaqing Huang,Lin Hu,Feng Liu

DOI: https://doi.org/10.1103/physrevb.99.115441

2019-01-01

Abstract:A recent experiment shows that the K ′K valley degeneracy can be lifted in monolayer WSe2 deposited on a layered ferromagnetic substrate of CrI3. In this work, we take a van der Waals heterostructure WSe2/CrI3 to model the monolayer WSe2 on the CrI3 substrate and investigate the effects underpinning the K ′K valley splitting based on first-principles calculations. We demonstrate that the interfacial atom superposition plays an important role and a W-Cr superposition is essential for a relatively large valley splitting. The results indicate inevitable sample-to-sample variations in the K ′K valley splitting in the WSe2/CrI3. Furthermore, we show that the K ′K valley splitting can be tuned in the trilayer CrI3/WSe2/CrI3 from nearly zero to more than two times of that in the bilayer WSe2/CrI3 by manipulating the layer alignment.
Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Xudong Zhu,Yuqian Chen,Zheng Liu,Yulei Han,Zhenhua Qiao

DOI: https://doi.org/10.1007/s11467-022-1228-4

2022-12-14

Frontiers of Physics

Abstract:We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt 2 AX 3 ( A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt 2 AX 3 and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt 2 HgS 3 /NiBr 2 , Pt 2 HgSe 3 /CoBr 2 , Pt 2 HgSe 3 /NiBr 2 , and Pt 2 ZnS 3 /CoBr 2 , with a maximum valley splitting of 134.2 meV in Pt 2 HgSe 3 /NiBr 2 and sizable global band gap of 58.8 meV in Pt 2 HgS 3 /NiBr 2 . Our findings demonstrate an ideal platform to implement applications on topological valleytronics.

physics, multidisciplinary
Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Xuejun Long,Xue Deng,Fulong Hu,Jing Xie,Bing Lv,Yangfang Liao,Wenzhong Wang

DOI: https://doi.org/10.1016/j.apsusc.2023.157111

IF: 6.7

2023-07-01

Applied Surface Science

Abstract:Information technology can be improved by using the magnetic proximity effect to control two-dimensional valleytronics. Ferrovalley materials attract wide attention because of spontaneous valley polarization and magnetism. Here, the first-principles density functional theory has been used to examine the valley characteristics of monolayer WSe2 caused by the ferrovalley VSe2 substrate. The results demonstrate that monolayer WSe2 experiences the largest spin and absolute valley splitting at energies of 466 and 8.223 meV, respectively. With the k•p model, the effective Zeeman magnetic field of 73.36 T was found for the most stable configuration. More intriguingly, due to the ferrovalley nature of VSe2 substrates, just one valley state at the K' point exhibits a single valley-dependent optical transition in WSe2/VSe2 heterostructure. Additionally, the strain is applied to modify the spin-valley splitting. With the in-plane strain effect, the sign-reversible with the reversed spin state is obtained in biaxial strain, and a fascinating type-I to type-III band alignment transition occurs in the WSe2/VSe2, which intensifies the valley splitting. In vertical strain, the pure spin-valley polarization of the WSe2/VSe2 heterostructure can be observed. Ferrovalley substrates provide new opportunities for valleytronics applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN 2 /MnPSe 3 Heterostructure

Xiao-jing Dong,Kang Jia,Wei-xiao Ji,Sheng-shi Li,Chang-Wen Zhang

DOI: https://doi.org/10.1021/acsaelm.3c01032

IF: 4.494

2024-01-17

ACS Applied Electronic Materials

Abstract:The absence of an anomalous valley Hall (AVH) effect in HfN2 can be attributed to its protection by the time-inversion (T) symmetry, resulting in a valley degeneracy in K +/K – valleys. On the other hand, MnPSe3 is protected by T and spatial inversion (P) symmetries, which prohibits spin splitting and consequently hinders the achievement of the AVH. Here, by combining model analysis and first-principles calculation, we construct a HfN2/MnPSe3 van der Waals (vdW) heterostructure (HTS). In HfN2/MnPSe3 HTS, MnPSe3 generates a magnetic exchange field that breaks the T symmetry of HfN2, resulting in the generation of an intrinsic spin valley Hall current. The introduction of the HfN2 layer disrupts the PT symmetry of MnPSe3, leading to valley spin splitting in K +/K – valleys. Without PT symmetry protection, the AVH effect is observed in the MnPSe3 layer of HfN2/MnPSe3 HTS. The valley splitting of the HfN2 layer and MnPSe3 layer in HfN2/MnPSe3 HTS gives rise to two distinct valleys in K +/K – points at the valence band maximum, respectively. Additionally, valley polarization in HfN2/MnPSe3 HTS can be flipped simultaneously by reversing the magnetization of the Mn atom. Moreover, HfN2/MnPSe3/Sc2CO2 ferroelectric HTS has been constructed to achieve precise control of valley-to-nonvalley-electron conversion and semiconductor-to-metal conversion. Our work offers not only an alternative and controllable approach for realizing the spontaneous AVH effect in antiferromagnetic HTS, but also a platform for designing energy-efficient valleytronic devices.

materials science, multidisciplinary,engineering, electrical & electronic
Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Huisheng Zhang,Wenjia Yang,Yaohui Ning,Xiaohong Xu

DOI: https://doi.org/10.1103/physrevb.101.205404

2020-01-01

Abstract:Manipulating the valley degree of freedom provides a novel paradigm for future valleytronics. Here we use first-principles approaches and the kp model analyses to carry out a comparative study of ten van der Waals (vdW) heterostructures constructed by transition-metal dichalcogenides and recently discovered twodimensional (2D) ferromagnetic (FM) insulators. Our calculations show that the MoTe2/CrBr3 heterostructure hosts a large valley splitting of similar to 28.7meV, which is much larger than that observed in the WSe2/CrI3 heterostructure (similar to 3.5meV). Specifically, the spin-orbital coupling can induce band inversions in WSe2/CrBr3 andMoTe(2)/CrBr3 heterostructures due to strong charge transfer across the interfaces of these two systems. Most strikingly, WSe2/CrBr3 is characterized as a valley-polarized quantum anomalous Hall effect system with Chern number C = -1 at the K point while C = 0 at the K' point. All those findings together with recent progress in 2D FM insulators point out an experimentally achievable scheme for exploration of abundant valley-polarized states in 2D FM vdW heterostructures.
The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

Yifeng Lin,Changcheng Zhang,Lixiu Guan,Zhipeng Sun,Junguang Tao

DOI: https://doi.org/10.3390/nano10091642

IF: 5.3

2020-08-21

Nanomaterials

Abstract:The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe dxy and dx2−y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures

Mei Ge,Han Wang,Jizheng Wu,Chen Si,Junfeng Zhang,Shengbai Zhang

DOI: https://doi.org/10.1038/s41524-022-00715-9

IF: 12.256

2022-02-15

npj Computational Materials

Abstract:Abstract Van der Waals (vdW) heterostructures composed of different two-dimensional (2D) materials offer an easily accessible way to combine properties of individual materials for applications. Owing to the discovery of a set of unanticipated physical phenomena, the twisted 2D vdW heterostructures have gained considerable attention recently. Here, we report enhanced valley splitting in twisted 2D vdW WSe 2 /CrI 3 heterostructures. In particular, the splitting can be 1200% (or 5.18 meV) of the value for a non-twisted heterostructure. According to the k · p model, this value is equivalent to a ~20 T external magnetic field applied perpendicular to the 2D sheet. The thermodynamic stability of 2D vdW WSe 2 /CrI 3 heterostructures, on the other hand, depends linearly on the interlayer twisting angle.

materials science, multidisciplinary,chemistry, physical
Mechanisms of Manipulating Valley Splitting in MoTe2/MnS2 Van Der Waals Heterostructure by Electric Field and Strains

Xiao Liang,Yiqun Liu,Tianjun Zhong,Ting Yang,Jie Li,Li Luo,Gao Dong,Yanhong Chen,Xuelian Luo,Tingting Tang,Lei Bi

DOI: https://doi.org/10.1039/d4ra01013b

IF: 4.036

2024-01-01

RSC Advances

Abstract:In this study, we discuss the tunability of valley splitting using first-principles calculations with a monolayer MoTe2 and layered ferromagnetic MnS2 heterostructure as an example. We observe that, due to the magnetic proximity effect (MPE) at the interface, a monolayer of MoTe2 can exhibit a significant valley splitting of 55.2 meV. The production of the interlayer dipoles with spin-adapted configuration could be the origin of MPE at the interface. Furthermore, the valley splitting can be regulated continuously by the perpendicular electric field and biaxial strain. Interestingly, the valley splitting increases with the increasing induced magnetic moments in MoTe2 by applying an electric field while the inverse laws are presented by applying biaxial strains, which indicates that the mechanisms of valley splitting manipulating in these two ways are quite different. The calculation results suggest that the electric field influences the electric dipole distributions at the interface, which determines the induced magnetic moments in monolayer MoTe2, and results in valley splitting variations. However, biaxial strains not only affect MPE at the interface but also the intrinsic spin splitting caused by spin-orbital coupling (SOC) effects of monolayer MoTe2 itself and the latter is even the dominating mechanism of valley splitting variations.
Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Yiding Wang,Hanbo Sun,Chao Wu,Weixi Zhang,San-Dong Guo,Yanchao She,Ping Li

2024-11-11

Abstract:Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT) symmetry are rarely reported that achieve the anomalous valley Hall effect. Here, we predict that the antiferromagnetic monolayer MnBr possesses spontaneous valley polarization. The valley splitting of valence band maximum is 21.55 meV at K and K' points, which is originated from Mn-dx2-y2 orbital by analyzing the effective Hamiltonian. Importantly, monolayer MnBr has zero Berry curvature in the entire momentum space but non-zero spin-layer locked Berry curvature, which offers the condition for the anomalous valley Hall effect. In addition, the magnitude of valley splitting can be signally tuned by the onsite correlation, strain, magnetization rotation, electric field, and built-in electric field. The electric field and built-in electric field induce spin splitting due to breaking the P symmetry. Therefore, the spin-layer locked anomalous valley Hall effect can be observed in MnBr. More remarkably, the ferroelectric substrate Sc2CO2 can tune monolayer MnBr to realize the transition from metal to valley polarization semiconductor. Our findings not only extend the implementation of the anomalous valley Hall effect, but also provides a platform for designing low-power and non-volatile valleytronics devices.

Materials Science,Mesoscale and Nanoscale Physics
Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Haihong Zheng,Biao Wu,Chang-Tian Wang,Shaofei Li,Jun He,Zongwen Liu,Jian-Tao Wang,Guoqiang Yu,Ji-An Duan,Yanping Liu

DOI: https://doi.org/10.1007/s12274-023-5865-x

IF: 9.9

2023-07-01

Nano Research

Abstract:Exploiting the valley degrees of freedom as information carriers provides new opportunities for the development of valleytronics. Monolayer transition metal dichalcogenides (TMDs) with broken space-inversion symmetry exhibit emerging valley pseudospins, making them ideal platforms for studying valley electronics. However, intervalley scattering of different energy valleys limits the achievable degree of valley polarization. Here, we constructed WSe 2 /yttrium iron garnet (YIG) heterostructures and demonstrated that the interfacial magnetic exchange effect on the YIG magnetic substrate can enhance valley polarization by up to 63%, significantly higher than that of a monolayer WSe 2 on SiO 2 /Si (11%). Additionally, multiple sharp exciton peaks appear in the WSe 2 /YIG heterostructures due to the strong magnetic proximity effect at the magnetic–substrate interface that enhances exciton emission efficiency. Moreover, under the effect of external magnetic field, the magnetic direction of the magnetic substrate enhances valley polarization, further demonstrating that the magnetic proximity effect regulates valley polarization. Our results provide a new way to regulate valley polarization and demonstrate the promising application of magnetic heterojunctions in magneto-optoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Probing Magnetic-Proximity-effect Enlarged Valley Splitting in Monolayer WSe 2 by Photoluminescence

Chenji Zou,Chunxiao Cong,Jingzhi Shang,Chuan Zhao,Mustafa Eginligil,Lishu Wu,Yu Chen,Hongbo Zhang,Shun Feng,Jing Zhang,Hao Zeng,Wei Huang,Ting Yu

DOI: https://doi.org/10.1007/s12274-018-2148-z

IF: 9.9

2018-01-01

Nano Research

Abstract:Possessing a valley degree of freedom and potential in information processing by manipulating valley features (such as valley splitting), group-VI monolayer transition metal dichalcogenides have attracted enormous interest. This valley splitting can be measured based on the difference between the peak energies of σ+ and σ− polarized emissions for excitons or trions in direct band gap monolayer transition metal dichalcogenides under perpendicular magnetic fields. In this work, a well-prepared heterostructure is formed by transferring exfoliated WSe2 onto a EuS substrate. Circular-polarization-resolved photoluminescence spectroscopy, one of the most facile and intuitive methods, is used to probe the difference of the gap energy in two valleys under an applied out-of-plane external magnetic field. Our results indicate that valley splitting can be enhanced when using a EuS substrate, as compared to a SiO2/Si substrate. The enhanced valley splitting of the WSe2/EuS heterostructure can be understood as a result of an interfacial magnetic exchange field originating from the magnetic proximity effect. The value of this magnetic exchange field, based on our estimation, is approximately 9 T. Our findings will stimulate further studies on the magnetic exchange field at the interface of similar heterostructures.
Valley contrasting bulk photovoltaic effect in antiferromagnetic MnPSe$_3$ monolayer

Qianqian Xue,Xingchi Mu,Yan Sun,Jian Zhou

DOI: https://doi.org/10.1103/PhysRevB.107.245404

2023-01-07

Abstract:Valleytronics that uses the inequivalent electronic states at the band extrema in semiconductors have been considered to play a vital role in the future information read/write technology. In the current work, we theoretically show that sizable valley contrasting bulk photovoltaic (BPV) effect could emerge, even when the total photocurrent is symmetrically forbidden. We illustrate our theory by using a prototypical two-dimensional antiferromagnetic semiconductor, MnPSe3 monolayer, that is PT-symmetric (P and T refer to spatially inversion and time-reversal operators, respectively). We show that the Neel vector well controls the magnetic point group at the $\Gamma$ point, and the BPV current direction. In addition, $\mathbf{k}$-dependent photocurrent generally arises due to the reduction of little group constraints at the valley. This leads to hidden valley-polarized photoconductivity which could reach a magnitude of 1350 $\mu$A/V&^2&, observable experimentally. We further predict that the MnPSe$_3$ monolayer could be two-dimensional ferrotoroidic, again depending on its Neel vector direction, which can be determined via magnetoelectric response measurements. Our work provides an exemplary platform for paving the route to future opto-spintronic and opto-valleytronic devices in a single antiferromagnetic nanomaterial.

Materials Science
First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Mei Ge,Leiting Chu,Fanmin Zeng,Zhongyin Cao,Junfeng Zhang

DOI: https://doi.org/10.1039/d4cp02486a

IF: 3.3

2024-08-18

Physical Chemistry Chemical Physics

Abstract:The rapid development of valleytronics makes the application of two-dimensional (2D) transition-metal dichalcogenides (TMDs) in valley electronics important. As a new degree of freedom, valley splitting of TMDs has been achieved and tuned by many methods. Among them, using the magnetic proximity effect (MPE) generated from the interface of 2D van der Waals (vdW) heterostructures stacking with TMDs and one magnetic substrate, valley splitting can be obtained through band edges' lifting at adjacent K/K' valley. However, the comprehensive mechanism and strategy of valley splitting in 2D TMDs heterostructures need to be explored ulteriorly. Here, we systematically investigated valley splitting of MX2 in MX2/CrI3 (M=W, Mo; X=S, Se, Te) vdW heterostructures using first-principles approaches. We demonstrated that, twist is an effective method to enhance valley splitting in MX2/CrI3 vdW heterostructures. Furthermore, we also showed a ~10 times enhancement of valley splitting by changing stacking patterns between WTe2 and CrI3 layers. We attribute this to the interlayer magnetic and electronic coupling between the two layers of vdW heterostructure. The present results provide a theoretical basis and effective methods for tuning valley splitting 2D TMDs heterostructures.

chemistry, physical,physics, atomic, molecular & chemical
Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

Ding Zhong,Kyle L. Seyler,Xiayu Linpeng,Ran Cheng,Nikhil Sivadas,Bevin Huang,Emma Schmidgall,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,Wang Yao,Di Xiao,Kai-Mei C. Fu,Xiaodong Xu

DOI: https://doi.org/10.1126/sciadv.1603113

IF: 13.6

2017-05-05

Science Advances

Abstract:A van der Waals heterostructure of monolayer WSe 2 and ferromagnetic CrI 3 enables exceptional control of valley pseudospin.

multidisciplinary sciences

Valley splitting in the antiferromagnetic heterostructure MnPSe 3 /WSe 2

Superior Electronic Structure in Two-Dimensional MnPSe 3 /mos2 Van Der Waals Heterostructures

Enhanced Valley Splitting in Monolayer WSe2 Due to Magnetic Exchange Field

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

A type-II MnPSe 3 /GeC heterostructure with tunable spin and valley splitting

Spin–valley splitting and spontaneous valley polarization in antiferromagnetic Mn2P2X3Y3 monolayers

Tunable valley splitting and anomalous valley Hall effect in VTe<sub>2</sub>/Ga<sub>2</sub>S<sub>3</sub> heterostructures

Valley Splitting in the Van Der Waals Heterostructure WSe2/CrI3 : the Role of Atom Superposition

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN 2 /MnPSe 3 Heterostructure

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures

Mechanisms of Manipulating Valley Splitting in MoTe2/MnS2 Van Der Waals Heterostructure by Electric Field and Strains

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Probing Magnetic-Proximity-effect Enlarged Valley Splitting in Monolayer WSe 2 by Photoluminescence

Valley contrasting bulk photovoltaic effect in antiferromagnetic MnPSe$_3$ monolayer

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics