Abstract:With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information. In this paper, a novel Magnetic Tunnel Junction (MTJ) based Spin-Orbital Torque Magnetic Random Access Memory (SOT-MRAM) composed of Fe3GeTe2 (FGT) is employed as a storage medium in the computer architecture. On the basis of the analysis of the fundamentals, model configuration, characteristics and performance advantages of the FGT based SOT device, a hybrid storage (L1, L2, Last Level Cache) is constructed, with FGT-SOT-MRAM, conventional SOT-MRAM and STT-MRAM replacing the original static random access memory (SRAM) in the novel triple-level CPU cache architecture. This can override the increasing leakage problem of SRAM, while opening up the application of two-dimensional van der Waals ferromagnets in computer systems at the L1 cache level. Meanwhile, an innovative cache optimization scheme is put forward for magnetic memory to better match the performance of FGT-SOT-MRAM to CPU. The simulation results demonstrate that the FGT-based MRAM can achieve up to 38.03% IPC optimization and 53.41% power optimization in the CPU cache system in contrast to the conventional ones.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that in computer architecture, with the development of technologies such as artificial intelligence, higher requirements are imposed on information processing and storage. In particular, the application of static random - access memory (SRAM) in CPU caches is facing increasingly serious leakage problems, which limit its performance and energy efficiency. Therefore, the paper proposes a new type of magnetic tunnel junction (MTJ) spin - orbit - torque magnetic random - access memory (SOT - MRAM) based on the two - dimensional magnetic material Fe3GeTe2 (FGT) to replace the traditional SRAM and construct a new three - level CPU cache architecture (L1, L2, and the last - level cache). Specifically, the paper solves the problem through the following points: 1. **Application of new materials**: Utilize the FGT material with excellent electromagnetic physical properties to construct MRAM based on the SOT mechanism. The FGT material exhibits characteristics such as high magnetic anisotropy, high - quality surface, large coercive force, and high Curie temperature. These characteristics make the MTJ devices based on FGT have a large tunnel magnetoresistance (TMR) value, which helps to reduce read - write interference and improve the sensing margin. 2. **Design of a new cache architecture**: A hybrid storage system is constructed, where the L1 cache uses FGT - SOT - MRAM, the L2 cache uses traditional SOT - MRAM, and the last - level cache uses STT - MRAM. This design not only overcomes the leakage problem of SRAM but also opens up new possibilities for the application of two - dimensional van der Waals ferromagnetic materials in computer systems. 3. **Proposal of an optimization scheme**: In view of the characteristics of magnetic memories, an innovative cache optimization scheme is proposed to better match the performance of FGT - SOT - MRAM with the requirements of the CPU. By optimizing the MESI protocol, the number of write operations in the L1 cache is reduced, local overheating is avoided, and the life of the FGT storage layer is extended. 4. **Performance evaluation**: The performance advantages of the new system are verified through simulation experiments. The results show that the MRAM based on FGT can achieve up to 38.03% instructions per cycle (IPC) optimization and 53.41% dynamic power consumption optimization in the CPU cache system, showing significant advantages compared to traditional SRAM and SOT - MRAM. In summary, this paper aims to solve the performance and energy efficiency problems in the existing CPU cache system by introducing advanced materials and technologies and provide new solutions for future computer architecture design.

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