Amorphous ZrO 2 Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400

Fenning Liu,Yue Peng,Yan Liu,Genquan Han,Wenwu Xiao,Bobo Tian,Ni Zhong,Hui Peng,Chungang Duan,Yue Hao

DOI: https://doi.org/10.1109/led.2021.3069837

IF: 4.8157

2021-05-01

IEEE Electron Device Letters

Abstract:An amorphous ZrO₂ based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies ( $V_{O}^{+}$ ) and negative charges near the ZrO₂/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of $V_{O}^{+}$ and negative charges in ZrO₂ are characterized by a polarization-voltage test. The ZrO₂ TJM achieves a TER ratio above 400 under 2.5/–1.5 V at 100 ns write/erase pulse condition, over 10⁴ cycles program/erase endurance, and >10⁴ s data retention.

engineering, electrical & electronic