Design high performance field-effect, strain/gas sensors of novel 2D penta-like Pd 2 P 2 SeX (X= O, S, Te) pin-junction nanodevices: A study of transport properties

Xiansheng Dong,Tong Chen,Guanghui Zhou
DOI: https://doi.org/10.1016/j.jallcom.2024.173417
IF: 6.2
2024-01-11
Journal of Alloys and Compounds
Abstract:In the realm of modern nanodevices, attaining high-switching performance and fulfilling sensing detection functions in high-precision environments are of paramount importance. Two-dimensional (2D) Pd 2 P 2 SeX (X = O, S, Te) have excellent geometric, physical, and chemical characteristics, and can crystallize into orthogonal structures with indirect band gaps. Based on these fundamental properties, 2D Pd 2 P 2 SeX pin-junction devices were modeled via first principles to simulate field-effect transistors, strain sensors with high-switching ratios, and chemisorption-based gas sensors. The Pd 2 P 2 SeX pin-junction device exhibited significant gate-voltage control over current, with current changes over nearly three orders of magnitude for Pd 2 P 2 SeO. Moreover, the application of a biaxial strain could close the band gap of Pd 2 P 2 SeX and significantly enhance transport characteristics, leading to substantial switching effects in devices, such as a 1.44 × 10 8 switching ratio for Pd 2 P 2 SeS. The chemisorption of NO and NO 2 produced interfacial electronic coupling that generated an impurity band crossing the Fermi level, thereby inducing a semiconducting to metallic transition. Pd 2 P 2 SeO- and Pd 2 P 2 SeS-based pin-junction devices exhibited 49.01 and 23.80 s recovery times, respectively, when detecting NO and NO 2 . Hence, they could be used as high-sensitivity and -selectivity gas sensors. Overall, 2D Pd 2 P 2 SeX materials have a vast potential for the development of low-dimensional electronic devices.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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