High-performance broadband phototransistor array of PdSe2/SOI Schottky junction
Yexin Chen,Qinghai Zhu,Jiabao Sun,Yijun Sun,Nobutaka Hanagata,Mingsheng Xu
DOI: https://doi.org/10.1039/d3nr06643f
IF: 6.7
2024-02-21
Nanoscale
Abstract:There are great interests in the incorporation of novel two-dimensional materials into Si-based technologies to realize multifunctional optoelectronic devices via heterogeneous integration. Here, we demonstrate a gate-tunable, self-driven, high-performance broadband phototransistor array based on PdSe2/Si Schottky junction, which is fabricated by pre-depositing semi-metallic PdSe2 film on SOI substrate. In addition, thanks to the zero bandgap of the PdSe2 material and PdSe2/Si vertical heterostructure, the prepared phototransistor exhibits pronounced photovoltaic properties in a wide spectral range from ultraviolet to near-infrared. The responsivity, specific detectivity and response time of the device at the incident light wavelength of 808 nm are 1.15 A/W, 9.39×1010 Jones, and 27.1/40.3 μs, respectively, which is better than previously reported PdSe2-based photodetectors. The photoelectric performance can be further improved by applying appropriate gate voltage to the phototransistor, and the responsivity of the device increases to 1.61 A/W at VG = 5 V. We demonstrate excellent imaging capabilities under 375 nm, 532 nm, and 808 nm laser sources by a 4 × 4 array image sensor using PdSe2/SOI phototransistors.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry