Abstract:Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between $Au$ and chalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield. On the other hand, it may affect significantly the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L $MoS_{2}$ exfoliated on ultra-flat $Au$ films ($0.16-0.21 nm$ roughness) and finally transferred to an insulating $Al_{2}O_{3}$ substrate. Raman mapping and correlative analysis of the $E'$ and $A1'$ peaks positions revealed a moderate tensile strain ($0.2\%$) and p-type doping ($n=-0.25 \times 10^{13} cm^{-2}$) of 1L $MoS_{2}$ in contact with $Au$. Nanoscale resolution current mapping and current-voltage (I-V) measurements by conductive atomic force microscopy (C-AFM) showed direct tunnelling across the 1L $MoS_{2}$ on $Au$, with a broad distribution of tunnelling barrier values (from 0.7 to 1.7 eV) consistent with the p-type doping of $MoS_{2}$. After the final transfer of $1L-MoS_{2}$ on $Al_{2}O_{3}/Si$, the strain was converted to compressive ($-0.25\%$). Furthermore, an n-type doping ($n=0.5 \times 10^{13} cm^{-2}$) was deduced by Raman mapping and confirmed by electrical measurements of an $Al_{2}O_{3}/Si$ back-gated 1L $MoS_{2}$ transistor. These results provide a deeper understanding of the $Au$-assisted exfoliation mechanisms and can contribute to its widespread applications for the realization of novel devices and artificial vdW heterostructures

Improved Strain Transfer Efficiency in Large-Area Two-Dimensional MoS 2 Obtained by Gold-Assisted Exfoliation

Effective Strain Engineering of 2D Materials via Metal Deposition

Strain-Enhanced Mobility of Monolayer MoS2

Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

Improving the Strain Control Performance of MoS2 Monolayer to Develop Flexible Electronics

Strain Engineering 2D MoS$_{2}$ with Thin Film Stress Capping Layers

Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution

Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate

Giant Thermal Conductivity Enhancement in Multilayer MoS2 under Highly Compressive Strain

Large‐Area Mechanically‐Exfoliated Two‐Dimensional Materials on Arbitrary Substrates

Monolayer MoS$_2$ Strained to 1.3\% with a Microelectromechanical System

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Influences of Contact Metals on the Performances of MoS2 Devices under Strains

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Strain and defect-engineering on the basal plane of ultra-large MoS 2 monolayers attached onto stretchable gold electrodes

Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition

Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors

Probing Evolution Of Local Strain At Mos2-Metal Boundaries By Surface-Enhanced Raman Scattering

Controlling Gold-Assisted Exfoliation of Large-Area MoS2 Monolayers with External Pressure