Impacts of defects on mechanical and thermal properties of SiC and GeC monolayers

Kai Ren,Lei Huang,Huabing Shu,Guoqiang Zhang,Weihua Mu,Huanping Zhang,Huasong Qin,Gang Zhang
DOI: https://doi.org/10.1039/d3cp04538b
IF: 3.3
2023-11-16
Physical Chemistry Chemical Physics
Abstract:Defect engineering has been considered as an effective way for controlling the heat transport properties of two-dimensional materials. In this work, the effects of point vacancy and grain boundary on the mechanical and thermal performances of SiC and GeC monolayers are investigated systematically by molecular dynamics calculations. The failure strength in the SiC and GeC is decreased by introducing vacancy at room temperature, and the stress–strain relationship can be tuned significantly by different kinds of vacancy. When the grain boundary of 21.78° is applied, the maximal fracture strengths can be as large as 27.56% for the SiC and 23.56% for the GeC. Also, the thermal properties of the two monolayers show a remarkable dependence on the vacancy and grain boundary. The high vacancy density in the SiC and GeC can induce the disordered heat flow and the C/Ge point defect is crucial for thermal conductivity regulation for the Si/GeC monolayer. More importantly, the SiC and GeC monolayers with grain boundary of 5.09° show excellent interfacial thermal conductance. Our findings are of great importance in understanding SiC and GeC monolayers and seeking their potential applications.
chemistry, physical,physics, atomic, molecular & chemical
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