Abstract:A new sulfurization configuration is elaborated, and suitable parameters are explored for the preparation of Cu2CdSnS4 thin films. Appropriate copper content can reduce the fluctuations of bandgap and electrostatic potential in Cu2CdSnS4 thin film. The best efficiency of Cu2CdSnS4 thin film solar cell can be found over 10% efficient under the ratio of 0.83 and 590 °C sulfurization temperature. At present, Kesterite‐based thin‐film solar cells, such as Cu2ZnSnS4 solar cells, involve serious band‐tailed states, which leads to low open‐circuit voltage, thereby hindering the further improvement of device performance. In stannite‐based materials, such as Cu2CdSnS4, the substitution of Zn with Cd can effectively suppress CuCd‐related point defects and defect clusters; thus, the band‐tailing state is few, which has attracted considerable research attention. In this work, on the basis of using optimized sulfurization and optimizing ratios (Cu/Cd+Sn) and temperatures, Cu2CdSnS4 thin films can be obtained with good quality and single‐phase composition, in which the device prepared at a ratio of 0.83 and 590 °C has the highest efficiency. Defect analysis shows that the substitution of Zn with Cd can effectively reduce CuCd‐related defects and defect clusters (such as 2CuCd+SnCd) and also decrease Urbach energy, fluctuations of bandgap, and electrostatic potential compared with kesterite‐based devices. In particular, Cu2CdSnS4 thin‐film solar cell prepared under optimized conditions (the ratio of 0.83 and 590 °C) has the minimum reverse saturation current, red shift, and the maximum minority carrier diffusion length. Therefore, an efficiency over 10% Cu2CdSnS4 thin‐film solar cell is reported, which shows the highest efficiency among stannite‐based solar cells to date.

Optimization of preparation conditions and design of device configurations for Cu3AsS4 solar cells: a combined study of first-principles calculations and SCAPS-1D device simulations

Theoretical Optimization of an Earth-Abundant and Environmentally Friendly Photovoltaic Absorber Cu3PSe4 from First-Principles Study to Device Simulation

Enhanced Crystallization and Optimized Morphology of Perovskite through Doping Indium-Based Metal-Organic Assembly: Achieving Significant Solar Cell Efficiency Enhancements

Electronic structure, defect properties, and optimization of band gap of the earth-abundant and low-toxicity photovoltaic absorber Cu3SbS4

Towards High Performance: Solution-Processed Perovskite Solar Cells with Cu-Doped CH3NH3PbI3

Numerical Investigation of CuSbS2Thin Film Solar Cell using SCAPS-1D: Enhancement of Efficiency on Experimental Films by Defect Studies

Electronic Structure, Defect Properties, and Optimization of the Band Gap of the Earth-Abundant and Low-Toxicity Photovoltaic Absorber Cu3SbS4.

Theoretical Optimization of an Earth-Abundant and Environmentally Friendly Photovoltaic Absorber Cu 3 PSe 4 from First-Principles Study to Device Simulation

CuSbS2 As a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

Towards high-efficiency planar heterojunction antimony sulfide solar cells

Design and performance exploration of Pb-free low-cost all-inorganic perovskite-inspired CuAgBi2I8 solar cells: Theoretical approach

Simulation and Optimization of Hole Transport Layer Performance of Lead‐Free Perovskite Solar Cells

Performance analysis of all-inorganic Cs 3 Sb 2 I 9 perovskite solar cells with micro-offset energy level structure by SCAPS-1D simulation and First-principles calculation

Numerical investigation of structural optimization and defect suppression for high-performance perovskite solar cells via SCAPS-1D

Modeling and optimization of numerical studies on CuSbS 2 thin film solar cell with ∼ 15% efficiency

Over 10% Efficient Cu2CdSnS4 Solar Cells Fabricated from Optimized Sulfurization

Oxygen‐Assisted Tailoring of Evaporated PbS Hole Transport Layer for Highly Efficient Antimony Sulfide Solar Cells

Performance Enhancement of an all-inorganic perovskite solar cell by using SCAPS and DFT extracted parameters of CuX (X = I, Cl, Br)

Numerical simulations of novel multi- chalcogenide CuAgBeSnSe4 based thin film solar cell with over 24% efficiency using SCAPS-1D

Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment

Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D