Model of Electron Population and Energy Band Diagram of Multiple-Channel GaN Heterostructures

Xing Chen,Dandan Lv,Jinfeng Zhang,Hong Zhou,Zeyang Ren,Chong Wang,Yong Wu,Dong Wang,Hong Zhang,Yingyi Lei,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.1109/ted.2021.3061965

IF: 3.1

2021-04-01

IEEE Transactions on Electron Devices

Abstract:Multiple-channel GaN heterostructures have been used to improve the device performance of high electron mobility transistors (HEMTs). The object is to achieve highly linear transconductance, low ON-resistance, and large output current. However, the complicated situation of the multiple channels made it difficult to model multiple-channel HEMTs. We report an analytical model of the electron population and the energy band diagram of multiple-channel GaN heterostructures. It is established based on the continuity of electric displacement vector at various interfaces and the electric neutrality of the whole heterostructure. The double-channel, triple-channel, four-channel, and ten-channel heterostructures have been investigated, and the calculation results are compared with the numerical self-consistent Schrödinger–Poisson solution to show the feasibility of the model.

engineering, electrical & electronic,physics, applied

What problem does this paper attempt to address?

The problem this paper attempts to address is the establishment of an analytical model for the electron distribution and band diagram in multi-channel Gallium Nitride (GaN) heterostructures. Specifically, the research objectives include: 1. **Achieving high linear transconductance**: Improving the device's performance in high-frequency and high-power applications. 2. **Reducing on-resistance**: Decreasing the power consumption during device operation. 3. **Increasing output current**: Enhancing the overall performance of the device. However, due to the complexity of multi-channel structures, existing modeling methods find it difficult to accurately describe the electron distribution and band diagram in these structures. Therefore, this paper proposes an analytical model based on the continuity of the displacement vector and the overall electrical neutrality of the heterostructure to address this issue. Through this model, the two-dimensional electron gas (2DEG) density in different types of channels can be calculated and compared with the numerical self-consistent Schrödinger-Poisson solution to verify the model's validity.

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