Temperature assistance of electric field-controlled spin–orbit torque-based magnetization switching in PMN–PT/FePt heterostructures

Qi Guo,Zhicheng Wang

DOI: https://doi.org/10.1039/d1ra00919b

IF: 4.036

2021-01-01

RSC Advances

Abstract:E-field has an improved regulating effect on PMA and SOT-based current induced magnetization switching of PMN–PT/FePt heterostructures.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Modulation of spin dynamics in Ni/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Hang Xu,Bo Wang,Ji Qi,Mei Liu,Fei Teng,Linglong Hu,Yuan Zhang,Chaoqun Qu,Ming Feng

DOI: https://doi.org/10.1007/s40145-021-0548-0

IF: 11.534

2022-01-06

Journal of Advanced Ceramics

Abstract:Abstract Motivated by the fast-developing spin dynamics in ferromagnetic/piezoelectric structures, this study attempts to manipulate magnons (spin-wave excitations) by the converse magnetoelectric (ME) coupling. Herein, electric field ( E -field) tuning magnetism, especially the surface spin wave, is accomplished in Ni/0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 (PMN-PT) multiferroic heterostructures. The Kerr signal (directly proportional to magnetization) changes of Ni film are observed when direct current (DC) or alternative current (AC) voltage is applied to PMN-PT substrate, where the signal can be modulated breezily even without extra magnetic field ( H -field) in AC-mode measurement. Deserved to be mentioned, a surface spin wave switch of “1” (i.e., “on”) and “0” (i.e., “off”) has been created at room temperature upon applying an E -field. In addition, the magnetic anisotropy of heterostructures has been investigated by E -field-induced ferromagnetic resonance (FMR) shift, and a large 490 Oe shift of FMR is determined at the angle of 45° between H -field and heterostructure plane.

materials science, ceramics
Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Mengxi Wang,Qi Guo,Xiaoguang Xu,Zeyu Zhang,Zengyao Ren,Libai Zhu,Kangkang Meng,Jikun Chen,Yong Wu,Jun Miao,Yong Jiang

DOI: https://doi.org/10.1002/aelm.202000229

IF: 6.2

2020-05-25

Advanced Electronic Materials

Abstract:A strain‐mediated perpendicular magnetic anisotropy (PMA) and current‐induced magnetization switching via spin–orbit torque (SOT) in PbMg1/3Nb2/3O3‐PbTiO3 (PMN‐PT)/Ta/Pt/Co/Pt ferromagnetic heterostructures are reported. It is found that the PMA changes regularly with the preloaded lateral electric field. The SOT‐based current‐induced magnetization switching also shows a reversible trend via applying a lateral electric field. Domain wall propagation driven by electric field is observed directly under a fixed perpendicular magnetic field by magnetic optical Kerr (MOKE) microscope. These behaviors can be attributed to the strain from the PMN‐PT substrates induced by the piezoelectric effect under electric field. Basing on the domain wall motion mechanism, repeatable resistance states of the Hall bar can be controlled by external electric field under a small auxiliary magnetic field, which enables the information recorded in the device can be programmed by voltage. This study provides a potential method to design the electric field controlled spintronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/pt)(3)/pb(mg1/3nb2/3)o-3-pbtio3 Multiferroic Heterostructures

Bin Peng,Ziyao Zhou,Tianxiang Nan,Guohua Dong,Mengmeng Feng,Qu Yang,Xinjun Wang,Shishun Zhao,Dan Xian,Zhuang-De Jiang,Wei Ren,Zuo-Guang Ye,Nian X. Sung,Ming Liu

DOI: https://doi.org/10.1021/acsnano.7b01547

IF: 17.1

2017-01-01

ACS Nano

Abstract:One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)3/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (ΔHeff) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a ΔHeff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin-orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a ΔHeff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.
Efficient Tuning of the Spin–Orbit Torque Via the Magnetic Phase Transition of FeRh

Cuimei Cao,Shiwei Chen,Baoshan Cui,Guoqiang Yu,Changhuan Jiang,Zhenzhong Yang,Xuepeng Qiu,Tian Shang,Yang Xu,Qingfeng Zhan

DOI: https://doi.org/10.1021/acsnano.2c04488

IF: 17.1

2022-01-01

ACS Nano

Abstract:The understanding and control of the spin-orbit torque (SOT) are central to antiferromagnetic spintronics. Despite the fact that a giant SOT efficiency has been achieved in numerous materials, its efficient tuning in a given material has not been established. Materials with magnetic phase transitions (MPTs) offer a new perspective, as the SOT efficiency may vary significantly for the different magnetic orderings across the transition, and the transition itself can be readily tuned by various control parameters. This work reports that the SOT efficiency of a FeRh-based perpendicular magnetized heterostructure can be significantly tuned by varying the temperature across the MPT. The SOT efficiency exhibits a temperature hysteresis associated with the first-order nature of the MPT, and its value in the ferromagnetic phase is seen to be enhanced by ∼450%, simply by a lowering of temperature to drive FeRh into the antiferromagnetic phase. Furthermore, current-induced magnetization switching can be achieved without an assistant magnetic field for both ferromagnetic and antiferromagnetic FeRh, with a low critical switching current density for the latter. These results not only directly establish FeRh as an efficient spin generator but also present a strategy to dynamically tune SOT via varying the temperature across MPTs.
Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Kaiming Cai,Meiyin Yang,Hailang Ju,Kevin William Edmonds,Baohe Li,Yu Sheng,Bao Zhang,Nan Zhang,Shuai Liu,Yang Ji,Houzhi Zheng,Kaiyou Wang

DOI: https://doi.org/10.1038/nmat4886

2016-04-19

Abstract:All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and recently are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations.

Materials Science
Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents

Ruiyue Chu,Bin Cui,Liang Liu,Weikang Liu,Tingting Miao,Xue Ren,Bin Cheng,Xiangxiang Zhao,Xinyi Wu,Shuyun Wu,Jifan Hu

DOI: https://doi.org/10.1021/acsami.3c02079

IF: 9.5

2023-06-10

ACS Applied Materials & Interfaces

Abstract:Reversal of magnetization via current-induced spin-orbit torque (SOT) is one of the core issues in spintronics. However, an in-plane assistant field is usually required for the deterministic switching of a perpendicularly magnetized system. Additionally, the efficiency of SOT is low, which is detrimental to device applications. This study achieved a reversible and non-volatile control of the critical current for magnetization switching and spin Hall efficiency in the TaN/W/Pt/Co/Pt/TaN...

materials science, multidisciplinary,nanoscience & nanotechnology
Electric-Field-Assisted Magnetization Switching in Fepd/Pb(Mg1/3nb2/3)O-3-Pbtio3 Heterostructure at Room Temperature

Y. T. Yang,D. H. Wang,Y. Q. Song,J. L. Gao,L. Y. Lv,Q. Q. Cao,Y. W. Du

DOI: https://doi.org/10.1063/1.4824542

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:We demonstrate an electric-field-assisted magnetization switching in FePd/PMN-PT heterostructure at room temperature. Not only the remanent magnetization but also the coercivity exhibits an obvious response with the electric field. Without the aid of magnetic bias field, the remanent magnetization of the FePd film shows an analogous on-off behavior with the electric field switching on and off alternatively. The magnetization switching can be electrically controlled in this heterostructure due to the variation of coercivity caused by electric field.
Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Meixia Chang,Jijun Yun,Yongbo Zhai,Baoshan Cui,Yalu Zuo,Guoqiang Yu,Li Xi

DOI: https://doi.org/10.1063/5.0025132

IF: 4

2020-10-05

Applied Physics Letters

Abstract:Spin orbit torque-driven magnetization switching in perpendicularly magnetized thin film relies on an extra in-plane magnetic field to break the in-plane magnetic symmetry, which is an obstacle for the integration of spin–orbit torque-based spintronic devices. Here, we propose a simple method to realize the field-free spin–orbit torque-driven magnetization switching by exploiting a tilted magnetic anisotropy, which is caused by the direct coupling of two ferromagnetic layers in the Pt/Co/FeNi/Ta structure. When preparing the sample, a 1000 Oe in-plane magnetic field was applied to ensure the magnetic moment deviating a small angle from the out-of-plane direction to this in-plane field direction. We experimentally demonstrate the deterministic field-free magnetization switching in Pt/Co/FeNi/Ta by the field-like spin–orbit torques when the electric current is applied perpendicular to this in-plane field direction. The switching performance is slightly degraded with the critical switching current density and thermal stability factor, respectively, reaching 6.4 × 106 A/cm2 and 25 due to the slightly decreased spin–orbit torque efficiency and perpendicular magnetic anisotropy with introducing the FeNi layers. Our work paves the way for realizing the field-free magnetization switching by spin–orbit torques.

physics, applied
Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt) 3 /PMN-PT Heterostructure.

Ying Sun,You Ba,Aitian Chen,Wei He,Wenbo Wang,Xiaoli Zheng,Lvkuan Zou,Yijun Zhang,Qu Yang,Lingjia Yan,Ce Feng,Qinghua Zhang,Jianwang Cai,Weida Wu,Ming Liu,Lin Gu,Zhaohua Cheng,Ce-Wen Nan,Ziqiang Qiu,Yizheng Wu,Jia Li,Yonggang Zhao

DOI: https://doi.org/10.1021/acsami.7b00284

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:We report electric-field control of magnetism of (Co/Pt) multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O-PbTiO (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively. We also demonstrate the role of competition between the applied magnetic field and the electric field in determining the magnetization of the sample with the coexistence phase. Our results demonstrate electric-field control of magnetism by harnessing the strain-mediated coupling in multiferroic heterostructures with perpendicular magnetic anisotropy and are helpful for electric-field modulations of Dzyaloshinskii-Moriya interaction and Rashba effect at interfaces to engineer new functionalities.
Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Fengmao Wang,Xiangli Zhang,Zongzhi Zhang,Yaowen Liu

DOI: https://doi.org/10.1016/j.jmmm.2021.167757

IF: 3.097

2021-01-01

Journal of Magnetism and Magnetic Materials

Abstract:Field-free magnetization switching by in-plane current injection via spin-orbit interactions in heavy-metal/ ferromagnet bilayer systems is of great interest for applications of spin-orbit torque (SOT). Here, we demonstrate theoretically how to deterministically switch the magnetization of CoFeB with a tilted perpendicular magnetic anisotropy (PMA) by using the SOT effect from the viewpoint of energy landscape. It is found that magnetization switching is dependent both on the polar angle theta and the azimuthal angle phi of the tilted PMA. A tiny remnant magnetization component that deviates away from the film plane during the spin current pulse impulsion period is a key point for the subsequent switching. The underlying mechanism is attributed to the shift of PMA energy barrier with the magnetization angle, which dominates the state of the tiny magnetization component and thereafter the bipolar deterministic switching. Based on the simulation results, a phase diagram of deterministic switching regarding theta and phi is established. Moreover, the positive and negative critical switching current densities are demonstrated to exhibit an astroid-like characteristic as a function of theta. This study provides a fundamental insight into the nature of SOT-induced deterministic switching with the tilted PMA method.
Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Jiaqiang Liu,Xi Zha,Qi Lu,Liwen Liang,Wenli Wang,Zhongqiang Hu,Zhixin Guo,Zhiguang Wang,Ming Liu

DOI: https://doi.org/10.1021/acsami.4c10495

2024-09-05

Abstract:The realization of the all-electrical manipulation of perpendicular magnetization switching is essential for next-generation information storage technologies and spintronic devices. Current-induced spin-orbit torque (SOT) has attracted tremendous research interest. However, this approach usually relies on external magnetic field to achieve deterministic switching, which greatly limits SOT devices moving toward practical applications. Here, we report the measurement of SOT from the [Pt/Au] multilayer with composition gradient along the thickness direction. The multilayer exhibits a much larger SOT efficiency than pure Pt, and current-induced field-free magnetization switching has been realized in Co/[Pt/Au] heterostructures. Anomalous Hall resistance loop shift measurements indicate that the [Pt/Au] multilayer can produce spin current with z-direction polarization. Moreover, the results of the control experiments show that the Pt/Au interface is the primary cause of the z-direction polarized spin current for triggering field-free switching, whereas the compositional gradient effect is peripheral. We speculate that the field-free switching originates from the synergetic interface effect and Dzyaloshinskii-Moriya interaction. Our work not only paves the way for SOT devices toward practical application but also provides novel insights into the mechanisms governing current-induced deterministic perpendicular magnetization switching.
In-Plane Current-Driven Spin-Orbit Torque Switching in Perpendicularly Magnetized Films with Enhanced Thermal Tolerance

Di Wu,Guoqiang Yu,Qiming Shao,Xiang Li,Hao Wu,Kin L. Wong,Zongzhi Zhang,Xiufeng Han,Pedram Khalili Amiri,Kang L. Wang

DOI: https://doi.org/10.1063/1.4952771

IF: 4

2016-01-01

Applied Physics Letters

Abstract:We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co40Fe40B20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.
Electric field control of spin-orbit torque in annealed Ta/CoFeB/HfOx heterostructures via interfacial oxidation modulation

SHUO WU,Tianli Jin,Calvin Ching Ian Ang,Gerard Joseph Lim,Bryan Wei Hao Cheng,Ze Chen,Wen Siang Lew

DOI: https://doi.org/10.1088/1361-6528/ad5691

IF: 3.5

2024-06-13

Nanotechnology

Abstract:Electric field control of spin-orbit torque (SOT) exhibits promising potential in advanced spintronic devices through interfacial modulation. In this work, we investigate the influence of electric field and interfacial oxidation on SOT efficiency in annealed Ta/CoFeB/HfOx heterostructures. By varying annealing temperatures, the damping-like SOT efficiency reaches its peak at the annealing temperature of 320°C, with an 80% field-free magnetization switching ratio induced by SOT having been demonstrated. This enhancement is ascribed to the annealing-induced modulation of oxygen ion migration at the CoFeB/HfOx interface. By applying voltages across the Ta/CoFeB/HfOx heterostructures, which drives the O2‒ migration across the interface, a reversible, bipolar, and non-volatile modulation of SOT efficiency was observed. The collective influence of annealing temperature and electric field effects on SOT carried out in this work provides an effective approach into facilitating the optimization and control of SOT in spintronic devices.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
Electric field control of magnetism through modulating phase separation in (011)-Nd 0.5 Sr 0.5 MnO 3 /PMN-PT heterostructures

Yao Liu,Zhitong Xu,Kaiming Qiao,Feiran Shen,Andong Xiao,Jing Wang,Tianyu Ma,Fengxia Hu,Baogen Shen

DOI: https://doi.org/10.1039/d1nr00242b

IF: 6.7

2021-01-01

Nanoscale

Abstract:Large and non-volatile electric field control of magnetization has been realized through strain mediation of both ferromagnetic and antiferromagnetic phases in Nd 0.5 Sr 0.5 MnO 3 /PMN-PT multiferroic heterostructures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Field-free magnetization switching with full scale in Pt/Tm 3 Fe 5 O 12 bilayer on vicinal substrate

Tianhui Li,Weikai Luo,Jinxiang Wu,Xinjun Li,Hui Yang,Xiaotian Zhao,Hongyu An

DOI: https://doi.org/10.35848/1882-0786/ad2d74

IF: 2.819

2024-02-29

Applied Physics Express

Abstract:The spin-orbit torques (SOTs) within Pt/Tm3Fe5O12 (TmIG) bilayer offer an expedient method for manipulating the magnetization of TmIG. However, the practical application of TmIG is hindered by the presence of external field during switching. Here, we demonstrate field-free magnetization switching in Pt/TmIG bilayer on vicinal substrate with minimal sacrifice to perpendicular magnetic anisotropy (PMA) of TmIG. With the assistance of tilt PMA, reversible perpendicular magnetization switching is realized in the absence of an external field. Our results offer an alternative solution for achieving field-free perpendicular magnetization switching in Pt/TmIG bilayer, thereby fostering the advancement of emerging SOT-based devices.

physics, applied
Temperature Dependence of Spin-Orbit Torque-Driven Magnetization Switching in in Situ Grown Bi2Te3/MnTe Heterostructures

Xiaoyang Liu,Di Wu,Liyang Liao,Peng Chen,Yong Zhang,Fenghua Xue,Qi Yao,Cheng Song,Kang L. Wang,Xufeng Kou

DOI: https://doi.org/10.1063/5.0041062

IF: 4

2021-01-01

Applied Physics Letters

Abstract:We report the temperature dependence of the spin–orbit torque (SOT) in the in situ grown Bi2Te3/MnTe heterostructures by molecular beam epitaxy. By appropriately designing the film stack, robust ferromagnetic order with high Curie temperature and strong perpendicular magnetic anisotropy is established in the MnTe layer. Meanwhile, the sharp hetero-interface warrants highly efficient spin current injection from the conductive topological insulator (TI) channel. Accordingly, SOT-driven magnetization switching is observed up to 90 K with the critical current density within the 106 A⋅cm−2 range. More importantly, the temperature-dependent harmonic measurement data can be divided into two categories, namely, the spin Hall effect of the TI bulk states gives rise to a relatively small spin Hall angle in the high-temperature region, whereas the spin-momentum locking nature of the interfacial Dirac fermions leads to the enhancement of the SOT strength once the topological surface states become the dominant conduction channel at deep cryogenic temperatures. Our results offer direct evidence of the underlying mechanism that determines the SOT efficiency and may set up a suitable platform to realize TI-based spin–orbit applications toward room temperature.
Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Qin Du,Wenli Wang,Fan Tang,Wei Su,Jingen Wu,Zhongqiang Hu,Zhiguang Wang,Ming Liu

DOI: https://doi.org/10.1021/acsami.3c17325

2024-02-14

Abstract:Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo2O4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagnetic-to-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 104 A/cm2, which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo2O4. Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.
The Central Role of Tilted Anisotropy for Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization

Chen-Yu Hu,Wei-De Chen,Yan-Ting Liu,Chao-Chun Huang,Chi-Feng Pai

2023-06-10

Abstract:The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with perpendicular magnetic anisotropy (PMA), the use of SOT is still hampered by the necessity of a longitudinal magnetic field to break the magnetic symmetry to achieve deterministic switching. In this work, we first demonstrate that a robust and tunable field-free current-driven SOT switching of perpendicular magnetization can be controlled by the growth protocol in Pt-based magnetic heterostructures. It is further elucidated that such growth-dependent symmetry breaking is originated from the laterally tilted magnetic anisotropy of the ferromagnetic layer with PMA, which has been largely neglected in previous studies and its critical role should be re-focused. We show by both experiments and simulations that in a PMA system with tilted anisotropy, the deterministic field-free switching possesses a conventional SHE-induced damping-like torque feature and the resulting current-induced effective field has a non-linear dependence on the applied current density, which could be potentially misattributed to an unconventional SOT origin.

Mesoscale and Nanoscale Physics,Materials Science
Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

Kaifeng Dong,Chao Sun,Laizhe Zhu,Yiyi Jiao,Ying Tao,Xin Hu,Ruofan Li,Shuai Zhang,Zhe Guo,Shijiang Luo,Xiaofei Yang,Shaoping Li,Long You

DOI: https://doi.org/10.1016/j.eng.2021.09.018

IF: 12.834

2022-01-01

Engineering

Abstract:In this study, current-induced partial magnetization-based switching was realized through the spin–orbit torque (SOT) in single-layer L10 FePt with a perpendicular anisotropy (K u⊥) of 1.19 × 107 erg·cm−3 (1 erg·cm−3 = 0.1 J·m−3), and its corresponding SOT efficiency (β DL) was 8 × 10−6 Oe·(A·cm−2)−1 (1 Oe = 79.57747 A·m−1), which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work. The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples. Furthermore, the FePt grown on MgO with a granular structure had a larger effective SOT field and efficiency than that grown on SrTiO3 (STO) with a continuous structure. The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure. Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.
Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures

Tianli Jin,Gerard Joseph Lim,Han Yin Poh,Shuo Wu,Funan Tan,Wen Siang Lew

DOI: https://doi.org/10.1021/acsami.1c22061

2022-02-23

Abstract:Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through interfacing with a dielectric MgO layer. We demonstrate tunability of the effective out-of-plane spin torque acting on the ferromagnetic Co layer, enabling current-induced SOT magnetization switching without the assistance of an external magnetic field. The influence of the MgO layer thickness on effective SOT efficiency shows saturation at 4 nm, while up to 80% of field-free magnetization switching ratio is achieved with the MgO between 5 and 8 nm. We analyze and attribute the complex interaction to spin reflection at the dielectric/heavy metal interface and spin scattering within the dielectric medium due to interfacial electric fields. Further, through substituting the dielectric with Ti or Pt, we confirm that the MgO layer is indeed responsible for the observed field-free magnetization switching mechanism.

Temperature assistance of electric field-controlled spin–orbit torque-based magnetization switching in PMN–PT/FePt heterostructures

Modulation of spin dynamics in Ni/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/pt)(3)/pb(mg1/3nb2/3)o-3-pbtio3 Multiferroic Heterostructures

Efficient Tuning of the Spin–Orbit Torque Via the Magnetic Phase Transition of FeRh

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents

Electric-Field-Assisted Magnetization Switching in Fepd/Pb(Mg1/3nb2/3)O-3-Pbtio3 Heterostructure at Room Temperature

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt) 3 /PMN-PT Heterostructure.

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

In-Plane Current-Driven Spin-Orbit Torque Switching in Perpendicularly Magnetized Films with Enhanced Thermal Tolerance

Electric field control of spin-orbit torque in annealed Ta/CoFeB/HfOx heterostructures via interfacial oxidation modulation

Electric field control of magnetism through modulating phase separation in (011)-Nd 0.5 Sr 0.5 MnO 3 /PMN-PT heterostructures

Field-free magnetization switching with full scale in Pt/Tm 3 Fe 5 O 12 bilayer on vicinal substrate

Temperature Dependence of Spin-Orbit Torque-Driven Magnetization Switching in in Situ Grown Bi2Te3/MnTe Heterostructures

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

The Central Role of Tilted Anisotropy for Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization

Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures