Ultrathin and Ultrasensitive Direct X‐ray Detector Based on Heterojunction Phototransistors
Yuanhong Gao,Yongshuai Ge,Xinwei Wang,Jin Liu,Wenquan Liu,Yong Cao,Kaichen Gu,Zheng Guo,Yu‐Ming Wei,Ni Zhou,De Yu,Hong Meng,Xue‐Feng Yu,Hairong Zheng,Wei Huang,Jia Li
DOI: https://doi.org/10.1002/adma.202101717
IF: 29.4
2021-07-05
Advanced Materials
Abstract:<p>Most contemporary X-ray detectors adopt device structures with non/low-gain energy conversion, such that a fairly thick X-ray photoconductor or scintillator is required to generate sufficient X-ray-induced charges, and thus numerous merits for thin devices, such as mechanical flexibility and high spatial resolution, have to be compromised. This dilemma is overcome by adopting a new high-gain device concept of a heterojunction X-ray phototransistor. In contrast to conventional detectors, X-ray phototransistors allow both electrical gating and photodoping for effective carrier-density modulation, leading to high photoconductive gain and low noise. As a result, ultrahigh sensitivities of over 10<sup>5</sup> μC Gy<sub>air</sub><sup>−1</sup> cm<sup>−2</sup> with low detection limit are achieved by just using an ≈50 nm thin photoconductor. The employment of ultrathin photoconductors also endows the detectors with superior flexibility and high imaging resolution. This concept offers great promise in realizing well-balanced detection performance, mechanical flexibility, integration, and cost for next-generation X-ray detectors.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology