Giant Resistive Switching and Lattice Modulation at Full Temperature Range in a Sr‐Doped Nickelate Oxide Transistor
Xiaofei Gao,Junhua Liu,Yaoyao Ji,Long Wei,Wen Xiao,Shilin Hu,Lin Li,Kai Chen,Zhaoliang Liao
DOI: https://doi.org/10.1002/aelm.202300116
IF: 6.2
2023-04-30
Advanced Electronic Materials
Abstract:By doping engineering, colossal resistance switching and lattice modulation are achieved in Sr‐doped Nd0.8Sr0.2NiO3 (NSNO) films at full temperature range during ionic liquid gating. Further, resistance switching at 2 K is two orders of magnitude higher than that at 300 K. Moreover, NSNO exhibits faster switching speed than undoped NdNiO3. The findings provide a new route for oxide electronics. How to promote the resistance switching ratio, enlarge the operating temperature range and accelerate the switching speed is at the forefront of ionic gating electronics. Usually, most attention has been paid to materials with metal‐to‐insulator transition (MIT), e.g., VO2 and SmNiO3. Here, Sr‐doped nickelate (Nd0.8Sr0.2NiO3) films which do not exhibit MIT are used for electric field control of H‐doping and to detect the variation of resistance, lattice, and electronic structures. The experimental results directly show a giant resistive switching by more than 105 at the full temperature range (2 K–300 K) and lattice modulation by 3.4%. More importantly, much faster switching speeds can be achieved in Nd0.8Sr0.2NiO3 devices than in nondoped NdNiO3 ones. Such high switching performance is demonstrated to arise from strongly suppressed Ni–O hybridization after H doping. The results of this study provide a new material paradigm for developing energy‐efficient neuromorphic computing. Further, the doping effect on device performance also suggests a novel approach to develop correlated perovskite oxide transistors in order to fulfill practical applications.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology