Abstract:New applications of high-quality synthetic diamond in sensors and integrated photonic circuits, which are being rapidly developed nowdays, often demand freestanding diamond membranes with a thickness of about 10 microns as a substrate. However, the process of thin single-crystal diamond membranes fabrication, as well as their subsequent processing are challenging due to the high hardness, chemical resistance and brittleness of the material. Our work demonstrates a method for creating freestanding diamond membranes mounted on a thick diamond substrate using reactive ion etching of single-crystalline diamond wafers in plasma with mechanical protective masks. The optimal thickness of a diamond wafer for membranes etching is determined in the range from 100 to 120 μm with mandatory plane-parallel polishing of the sides. We experimentally studied the interaction of RF discharge SF6 based plasma with diamond surface during deep etching with mechanical protective masks of various shapes. It was found that the use of thick masks leads to an uneven rate of diamond etching over the entire area of the formed membrane. We have assessed ion sputtering resistance of various mask materials in SF6 based plasma, and found the most promising mask materials for deep diamond etching (steel, copper, diamond). We have fabricated diamond membranes with a thickness of 11,5 μm (and more), mounted on a durable 60 μm (and more) thick frames, and studied their characteristics. After etching membrane surface roughness was less than 25 nm, and the unevenness of their thickness did not exceed 20%. Also, we compare different methods for controlling the depth of diamond etching and the thickness of the resulting membranes, including mechanical measurements, IR spectral reflectometry, optical profilometry and electron microscopy. For citation: Golovanov A.V., Yun M.I., Bondarenko M.G., Prosin A.A., Tarelkin S.A. Monocrystalline diamond membranes with a thickness of 10 microns, manufactured by plasma etching. ChemChemTech [Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.]. 2024. V. 67. N 10. P. 55-64. DOI: 10.6060/ivkkt.20246710.1y.

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