Optically coherent nitrogen-vacancy centers in μm-thin etched diamond membranes

Maximilian Ruf,Mark IJspeert,Suzanne van Dam,Nick de Jong,Hans van den Berg,Guus Evers,Ronald Hanson

DOI: https://doi.org/10.1021/acs.nanolett.9b01316

2019-04-01

Abstract:Diamond membrane devices containing optically coherent nitrogen-vacancy (NV) centers are key to enable novel cryogenic experiments such as optical ground-state cooling of hybrid spin-mechanical systems and efficient entanglement distribution in quantum networks. Here, we report on the fabrication of a (3.4 $\pm$ 0.2) {\mu}m thin, smooth (surface roughness r$_q$ < 0.4 nm over an area of 20 {\mu}m by 30 {\mu}m diamond membrane containing individually resolvable, narrow linewidth (< 100 MHz) NV centers. We fabricate this sample via a combination of high energy electron irradiation, high temperature annealing, and an optimized etching sequence found via a systematic study of the diamond surface evolution on the microscopic level in different etch chemistries. While our particular device dimensions are optimized for cavity-enhanced entanglement generation between distant NV centers in open, tuneable micro-cavities, our results have implications for a broad range of quantum experiments that require the combination of narrow optical transitions and {\mu}m-scale device geometry.

Mesoscale and Nanoscale Physics,Optics,Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to fabricate micron - scale thin - layer diamond film devices containing optically coherent nitrogen - vacancy (NV) centers, which can support new low - temperature experiments, such as optical ground - state cooling of hybrid spin - mechanical systems and efficient entanglement distribution in quantum networks. Specifically, the authors aim to produce diamond film devices with narrow optical transition linewidths (<100 MHz) and micron - scale geometries by optimizing the preparation process to meet the requirements of quantum experiments.

### Core problems of the paper

1. **Introduction of optically coherent nitrogen - vacancy (NV) centers**:
- NV centers are point defects in diamond, with excellent optical and spin properties, and are widely used in fields such as quantum sensing, quantum computing, and quantum communication.
- However, embedding optically coherent NV centers in micron - scale devices remains a challenge.

2. **Fabrication of micron - scale diamond films**:
- In order to achieve efficient quantum entanglement generation and optical ground - state cooling, it is necessary to fabricate diamond films with a thickness of about 4 microns while maintaining a smooth surface (surface roughness \( r_q < 0.4 \) nm) and a narrow linewidth of NV centers (<100 MHz).

3. **Optimization of the etching process**:
- Problems such as surface damage and nanopillars are easily generated during the etching process, resulting in the degradation of the optical and spin properties of NV centers.
- It is necessary to find an optimized etching scheme that can ensure the thickness and smoothness of the film and maintain the high - quality optical properties of NV centers.

### Solutions

The authors achieved their goals through the following steps:

1. **High - energy electron irradiation**: Vacancies are formed in diamond by high - energy electron irradiation, and these vacancies combine with naturally occurring nitrogen atoms to form NV centers.
2. **High - temperature annealing**: Annealing treatment is carried out under high - temperature and high - vacuum conditions to ensure effective combination of vacancies and nitrogen atoms and reduce the influence of vacancy chains.
3. **Optimization of the etching process**: The influence of different etching chemical components on the surface roughness of diamond was studied. Finally, oxygen - based ICP - RIE (inductively coupled plasma reactive ion etching) was selected, and surface particles were removed by Ar/Cl₂ pre - etching to prevent the micro - masking effect.

Through the above methods, the authors successfully fabricated diamond film devices with a thickness of \( (3.4 \pm 0.2) \) microns, a surface roughness \( r_q < 0.4 \) nm, and an NV center linewidth less than 100 MHz, providing an ideal platform for quantum experiments.