Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Direct localized growth of graphene on substrate: a novel nickel-catalyzed CVD process assisted by H2 plasma

Direct growth of bilayer graphene on SiO₂ substrates by carbon diffusion through nickel.

Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Controlled Growth of Large-Area Monolayer Graphene on Ni (110) Facet: Insight from Molecular Dynamics Simulation

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Direct Growth of Graphene on SiO2 by Using Ga-Ni Flux

Catalyst-Free Growth of Nanographene Films on Various Substrates

Layer-controlled and wafer-scale synthesis of uniform and high-quality graphene films on a polycrystalline nickel catalyst

Synthesis of Single-Layer Graphene on Nickel Using A Droplet Cvd Process

Monolayer Graphene Growth Using Additional Etching Process in Atmospheric Pressure Chemical Vapor Deposition

Fast Growth of Graphene on SiO2/Si Substrates by Atmospheric Pressure Chemical Vapor Deposition with Floating Metal Catalysts

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Bulk Growth of Mono- to Few-Layer Graphene on Nickel Particles by Chemical Vapor Deposition from Methane

Autonomously Controlled Homogenous Growth of Wafer‐Sized High‐Quality Graphene Via a Smart Janus Substrate

The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

Multilayer graphene growth by a metal-catalyzed crystallization of diamond-like carbon

Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling