Abstract:The paper details the optimization of efficiency parameters for a InGaN TQW laser diode using the particle swarm optimization algorithm through SILVACO software. By adjusting layer thickness based on output power, slope efficiency, and threshold current, significant enhancements were achieved. Three optimized laser diodes (LD1, LD2, LD3) were compared with a primary LD, revealing notable improvements in output power and overall performance. Analysis of carrier recombination rates in the active region highlighted increased stimulated recombination and decreased non-radiative recombination, particularly in the n-side well. The study also showed a more uniform radiative recombination in the quantum wells of the optimized LDs, especially in LD3. Investigation of electron and hole concentrations, current densities, and energy levels demonstrated higher electron and hole current density in the optimized LDs, with LD3 exhibiting substantial improvements over the primary LD. Notably, the optimized LDs displayed reduced threshold current and improved slope efficiency compared to the primary LD. The study identified optimal layer thicknesses based on various cost functions, resulting in significant enhancements in output power (0.561 W), slope efficiency (2.515 W/A), and reduced threshold current (less than 0.029 A), indicative of enhanced TQW laser diode performance. Overall, the research showcases the effectiveness of the particle swarm optimization approach in optimizing GaN-based TQW laser diodes, leading to improved efficiency characteristics and demonstrating the potential for enhanced performance in practical applications.

Effect of optimized quaternary waveguides on the performance of deep ultraviolet laser diodes

High-Power and High-Efficiency 221 nm AlGaN Deep Ultraviolet Laser Diodes

High performance deep violet InGaN TQW laser diode through multi-layer thickness optimization using particle swarm optimization method

Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Advantages of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Graded Quantum Structures in the Active Region

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

Optimization of quantum well number of AlGaN/AlGaN deep-ultraviolet light-emitting diodes

Investigation of Quantum Structure in N-polar Deep-Ultraviolet Light-Emitting Diodes

Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate

Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers

High-Performances AlGaN-based DUV-LED via Under-Level Multiple Quantum Well Configuration

High-performance PCW-DFB laser diodes using offset quantum well epitaxial structures

Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers