Breaking the limitation of van der Waals integration

Chenyu Wang

DOI: https://doi.org/10.1038/s41578-024-00645-6

IF: 83.5

2024-01-08

Nature Reviews Materials

Abstract:An article in Nature Electronics introduces a single-step platform for integrating 2D materials into functional devices, addressing a fundamental constraint in van der Waals integration.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Van der Waals integration before and beyond two-dimensional materials

Yuan Liu,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1038/s41586-019-1013-x

IF: 64.8

2019-03-01

Nature

Abstract:Material integration strategies, such as epitaxial growth, usually involve strong chemical bonds and are typically limited to materials with strict structure matching and processing compatibility. Van der Waals integration, in which pre-fabricated building blocks are physically assembled together through weak van der Waals interactions, offers an alternative bond-free integration strategy without lattice and processing limitations, as exemplified by two-dimensional van der Waals heterostructures. Here we review the development, challenges and opportunities of this emerging approach, generalizing it for flexible integration of diverse material systems beyond two dimensions, and discuss its potential for creating artificial heterostructures or superlattices beyond the reach of existing materials.

multidisciplinary sciences
A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He,Yiming Pan,Haiyan Nan,Shuai Gu,Ziyi Yang,Bing Wu,Xiaoguang Luo,Bingchen Xu,Yuhan Zhang,Yun Li,Zhenhua Ni,Baigeng Wang,Jia Zhu,Yang Chai,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1511.02361

2015-11-07

Abstract:van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

Mesoscale and Nanoscale Physics,Materials Science
Van der Waals integration: Enables quantum explorations and innovative devices

Qi Qian

DOI: https://doi.org/10.1557/s43577-024-00668-y

IF: 5

2024-02-16

MRS Bulletin

Abstract:The fabrication of heterostructures and superlattices, which governs charge transport in materials, traditionally relies on high-temperature epitaxial processes. However, van der Waals (vdW) integration, a bond-free approach, has emerged as a versatile and gentle alternative. It allows for the integration of dissimilar materials beyond the thermodynamic limits, preserving material integrity and optimizing device performance. This approach has been instrumental in creating high-performance contacts for delicate lead halide perovskites, enabling quantum transport studies at low temperatures. Additionally, vdW integration has led to the development of vdW superlattices, and the chiral molecular intercalation superlattice offers a platform for exploring exotic chiral-induced spin selectivity effect and unconventional superconductivity. Together, vdW integration offers precise control over material composition and electronic structure, paving the way for innovative devices and the exploration of emergent quantum phenomena, all at the atomic scale. This groundbreaking strategy holds immense potential for advancing fundamental physical investigations and technological possibilities.

materials science, multidisciplinary,physics, applied
Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Xiaodong Zhang,Chenxi Huang,Zeyu Li,Jun Fu,Jiaran Tian,Zhuping Ouyang,Yuliang Yang,Xiang Shao,Yulei Han,Zhenhua Qiao,Hualing Zeng

DOI: https://doi.org/10.1038/s41467-024-49058-7

IF: 16.6

2024-05-30

Nature Communications

Abstract:Abstract Since the first report on single-layer MoS 2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.

multidisciplinary sciences
Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Xiangdong Yang,Jia Li,Rong Song,Bei Zhao,Jingmei Tang,Lingan Kong,Hao Huang,Zhengwei Zhang,Lei Liao,Yuan Liu,Xiangfeng Duan,Xidong Duan

DOI: https://doi.org/10.1038/s41565-023-01342-1

IF: 38.3

2023-03-21

Nature Nanotechnology

Abstract:Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS 2 ) have attracted tremendous interest for transistor applications. However, the fabrication of 2D transistors using traditional lithography or deposition processes often causes undesired damage and contamination to the atomically thin lattices, partially degrading the device performance and leading to large variation between devices. Here we demonstrate a highly reproducible van der Waals integration process for wafer-scale fabrication of high-performance transistors and logic circuits from monolayer MoS 2 grown by chemical vapour deposition. By designing a quartz/polydimethylsiloxane semirigid stamp and adapting a standard photolithography mask-aligner for the van der Waals integration process, our strategy ensures a uniform mechanical force and a bubble-free wrinkle-free interface during the pickup/release process, which is crucial for robust van der Waals integration over a large area. Our scalable van der Waals integration process allows damage-free integration of high-quality contacts on monolayer MoS 2 at the wafer scale and enables high-performance 2D transistors. The van-der-Waals-contacted devices display an atomically clean interface with much smaller threshold variation, higher on-current, smaller off-current, larger on/off ratio and smaller subthreshold swing than those fabricated with conventional lithography. The approach is further used to create various logic gates and circuits, including inverters with a voltage gain of up to 585, and logic OR gates, NAND gates, AND gates and half-adder circuits. This scalable van der Waals integration method may be useful for reliable integration of 2D semiconductors with mature industry technology, facilitating the technological transition of 2D semiconductor electronics.

materials science, multidisciplinary,nanoscience & nanotechnology
Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals (Adv. Mater. 7/2022)

Lixin Liu,Penglai Gong,Kailang Liu,Anmin Nie,Zhongyuan Liu,Sanjun Yang,Yongshan Xu,Teng Liu,Yinghe Zhao,Li Huang,Huiqiao Li,Tianyou Zhai

DOI: https://doi.org/10.1002/adma.202270057

IF: 29.4

2022-02-01

Advanced Materials

Abstract:2D Materials Van der Waals (vdW) encapsulation is one of the most promising approaches to improve the stability and reliability of 2D‐materials‐based devices. So far, a scalable vdW encapsulation approach through complementary metal–oxide‐semiconductor (CMOS)‐compatible processes still remains elusive. In article number 2106041, Kailang Liu, Tianyou Zhai, and co‐workers present a scalable vdW encapsulation method based on inorganic molecular crystals, through which the ambient stability of a series of 2D materials is significantly improved by tens of times.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Mixed‐Dimensional Van Der Waals Engineering for Charge Transfer Enables Wafer‐Level Flexible Electronics

Yiming Zhang,Dexing Liu,Qiuyue Huang,Qinqi Ren,Lingchong Fan,Chunhui Du,Shengdong Zhang,Min Zhang

DOI: https://doi.org/10.1002/adfm.202205111

IF: 19

2022-01-01

Advanced Functional Materials

Abstract:Flexible electronics draw intense interest because of their promising potential for emerging applications, which, however, encounter challenging obstacles of material self-limiting fabrication, trade-off mechanical flexibility, and associated moderate electrical performance. Here, wafer-level flexible fully-carbon-integrated transistors via mixed-dimensional van der Waals (vdW) engineering is realized. Remarkable performance includes subthreshold swing of 51.8 mV dec(-1) breaking thermionic limit, outstanding field-effect mobility as high as 313.8 cm(2) V-1 s(-1), and sub-1 V operating voltage. The charge transfer modulation of graphene oxide on carbon nanotube in the vdW-integrated transistors is designed to enhance channel conductance, which is simultaneously confirmed by theoretical calculations and electrical characterizations. Besides, the transistors maintain stable electrical performance after bending under an ultra-small radius of 250 mu m. Exponential-sensitivity temperature sensors and binary-logic inverters are further realized to demonstrate the feasibility of the devices as the building blocks of all-vdW electronics. These results indicate that either the strategy of all-vdW transistor realization or the charge transfer provides general approach to improve device performance and further advance flexible electronic technologies.
Integrating spin-based technologies with atomically controlled van der Waals interfaces

Wen Zhang,Ping Kwan Johnny Wong,Sheng Jiang,Qian Chen,Wei Huang,Andrew Thye Shen Wee

DOI: https://doi.org/10.1016/j.mattod.2021.09.015

IF: 24.2

2021-12-01

Materials Today

Abstract:As the feature sizes of electronic devices continue to shrink, new technologies—in particular spintronics and derived interfacial architectures—become increasingly pivotal. In this context, two-dimensional van der Waals materials and their interfaces are particularly attractive, relying on their ultimate atomic thicknesses and exceptional spin-related properties. This review provides a critical evaluation on the state-of-the-art of van der Waals interfaces and projected technological applications in spintronics, highlights major challenges and a viable solution—an all-in-situ growth and characterization strategy, and finally identifies several emerging spin-based technologies that might significantly benefit from the versatile van der Waals interfaces enabled by the strategy.

materials science, multidisciplinary
Devices and Applications of Van Der Waals Heterostructures

Chao Li,Peng Zhou,David Wei Zhang

DOI: https://doi.org/10.1088/1674-4926/38/3/031005

2017-01-01

Journal of Semiconductors

Abstract:Van der Waals heterostructures, composed of individual two-dimensional material have been developing extremely fast. Synthesis of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device exploitation. We review the approach of synthesis of van der Waals heterostructures, discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device.
Pattern Transfer for Van Der Waals Integration

Zhen Hu,Ruo-Xuan Sun,Xu-Dong Chen,Jianguo Tian,Zhibo Liu

DOI: https://doi.org/10.1021/acsaelm.4c01664

IF: 4.494

2024-01-01

ACS Applied Electronic Materials

Abstract:Atomically thin two-dimensional materials are promising candidates for designing functional electronic and optical devices through van der Waals integration. However, the route toward advanced devices typically involves transferring all prefabricated source materials onto target substrates, with significant reliance on post-transfer masking and etching operations to remove undesirable components. The existing transfer technologies are based on spin-coated polymeric carriers lacking controllable geometry, thereby limiting their ability to selectively transfer only the designated components of the source materials. Here, we introduce a pattern transfer technology for picking out the desired components from source materials on demand by rapidly patterning scalable polymeric transfer carriers into the required shapes and sizes. Patterned carriers provide the advantages of twist-angle controllability and one-step preparation of ready-to-transfer electrodes, enabling the formation of supermoire homostructures and van der Waals electrical contacts. These capabilities of the pattern transfer technology offer great potential for the design and versatile integration of multifunctional van der Waals devices and drive forward the industrial application of two-dimensional materials.
Allying nanophotonic structures with two-dimensional van der Waals materials

Yuan Meng,Hongkun Zhong,Zhihao Xu,Tiantian He,Justin S. Kim,Sangmoon Han,Yijie Shen,Mali Gong,Sang-Hoon Bae,Qirong Xiao

2023-05-12

Abstract:The integration of two-dimensional (2D) materials with photonic structures has catalyzed a wide spectrum of optical and optoelectronic applications. Conventional nanophotonic structures generally lack efficient reconfigurability and multifunctionality. The atomically thin 2D van der Waals materials can thus infuse new functionality and reconfigurability to the well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, micro-cavities, and metasurface, to name a few. Thanks to the handiness of van der Waals interfaces, the 2D materials can be easily transferred and mixed with other prefabricated photonic templates with high degrees of freedom, and can act as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here we review recent advents on combining 2D materials to nanophotonic structures for new functionality development or performance enhancements. Challenges and emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Optics
Functionalizing nanophotonic structures with 2D van der Waals materials

Yuan Meng,Hongkun Zhong,Zhihao Xu,Tiantian He,Justin S Kim,Sangmoon Han,Sunok Kim,Seoungwoong Park,Yijie Shen,Mali Gong,Qirong Xiao,Sang-Hoon Bae

DOI: https://doi.org/10.1039/d3nh00246b

2023-09-26

Abstract:The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Dasari Venkatakrishnarao,Abhishek Mishra,Yaoju Tarn,Michel Bosman,Rainer Lee,Sarthak Das,Subhrajit Mukherjee,Teymour Talha-Dean,Yiyu Zhang,Siew Lang Teo,Jian Wei Chai,Fabio Bussolotti,Kuan Eng Johnson Goh,Chit Siong Lau

DOI: https://doi.org/10.1021/acsnano.4c08554

2024-09-19

Abstract:Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Recent Advances in 1D Nanostructure Assembly and Direct Integration Methods for Device Applications

Incheol Cho,Jiwoo Ko,Dionisio Del Orbe Henriquez,Daejong Yang,Inkyu Park

DOI: https://doi.org/10.1002/smtd.202400474

IF: 12.4

2024-08-07

Small Methods

Abstract:In recent years, 1D nanostructure-based devices have achieved widespread usage in various fields, such as sensors, energy harvesters, transistors, and electrodes owing to their exceptional and distinct properties. The pioneering work of Dr. R. S. Wagner at Bell Laboratories in 1964 introduced the vapor-liquid-solid (VLS) process, a powerful synthesis method. Since then, numerous synthesis techniques, including sol-gel, hydrothermal, chemical vapor deposition (CVD), physical vapor deposition (PVD), and more, have been developed. These methods have enabled researchers to effectively control the shape (length and diameter) and material properties of nanowires. However, it was only about two decades ago that nanowires started to be widely utilized as key components in functional devices, primarily due to the lack of proper integration methods. Although dozens of integration techniques have been developed, none have emerged as a predominant choice, with each method presenting its own set of advantages and limitations. Therefore, this work aims to categorize these methods based on their working principles and provide a comprehensive summary of their pros and cons. Additionally, state-of-the-art devices that capitalize on the integration of 1D nanomaterials are introduced.
Mixed-dimensional van der Waals heterostructures: Synthesis, properties, and applications

Tangxin Li,Yihong She,Chang Yan,Jinshui Miao,Deep Jariwala

DOI: https://doi.org/10.1557/s43577-023-00618-0

IF: 5

2023-10-21

MRS Bulletin

Abstract:Mixed-dimensional van der Waals (vdW) hetero-integration, in which different materials are physically assembled through vdW forces, offers a promising bond-free integration strategy without lattice matching and processing limitations. Owing to their self-passivated and dangling-bond-free surface, two-dimensional (2D) layered materials can integrate with non-2D materials through vdW interactions. Here, we review the state-of-the-art multifunctional devices made from mixed-dimensional vdW heterostructures. By combining materials of differing dimensionalities, the vdW heterostructures with atomically sharp interfaces and highly distinct electronic functions offer a new material platform for fundamental studies that probe the generation, transport, and confinement of charges, excitons, phonons, and photons. Finally, wafer-scale growth of mixed-dimensional vdW heterostructures is also discussed for future applications in electronics, energy, and photonics. We highlight the contributions made in this issue on synthesis, properties, and applications of mixed-dimensional heterostructures in various domains and project future growth directions for the field.

materials science, multidisciplinary,physics, applied
Photonic van der Waals integration from 2D materials to 3D nanomembranes

Yuan Meng,Jiangang Feng,Sangmoon Han,Zhihao Xu,Wenbo Mao,Tan Zhang,Justin S. Kim,Ilpyo Roh,Yepin Zhao,Dong-Hwan Kim,Yang Yang,Jin-Wook Lee,Lan Yang,Cheng-Wei Qiu,Sang-Hoon Bae

DOI: https://doi.org/10.1038/s41578-023-00558-w

IF: 83.5

2023-04-22

Nature Reviews Materials

Abstract:The integration of functional nanomaterials and heterostructures with photonic architectures has laid the foundation for important photonic and optoelectronic applications. The advent of epitaxy and layer lift-off techniques has enabled a wide spectrum of two-dimensional materials and three-dimensional single-crystalline freestanding thin films with diverse optical functionalities, featuring van der Waals (vdW) interfaces suitable for photonic vdW integration. Physical assembly leveraging vdW interactions eliminates the constraints of epitaxial lattice-matching, introducing unprecedented freedom to combine dissimilar materials with appealing optoelectronic properties but radically distinct crystal structures. Various prefabricated vdW building blocks can be combined in novel hetero-integrated photonic architectures and hybrid vdW heterostructures to prototype new devices and explore exotic nanophotonic phenomena at mixed-dimensional vdW interfaces. The ultrathin nature of these freestanding nanomembranes also enables flexible and lightweight photonic devices for low-cost wearable and multifunctional health-care applications. In this Review, we survey the recent progress in photonic nanomembranes with vdW interfaces, discussing a broad range of delaminated freestanding nanomembranes from film preparation to device implementation. We also analyse the remaining challenges and highlight emerging opportunities for advanced vdW hetero-integration.

materials science, multidisciplinary,nanoscience & nanotechnology
Van Der Waals Nanomesh Electronics on Arbitrary Surfaces

You Meng,Xiaocui Li,Xiaolin Kang,Wanpeng Li,Wei Wang,Zhengxun Lai,Weijun Wang,Quan,Xiuming Bu,SenPo Yip,Pengshan Xie,Dong Chen,Dengji Li,Fei Wang,Chi-Fung Yeung,Changyong Lan,Chuntai Liu,Lifan Shen,Yang Lu,Furong Chen,Chun-Yuen Wong,Johnny C. Ho

DOI: https://doi.org/10.1038/s41467-023-38090-8

IF: 16.6

2023-01-01

Nature Communications

Abstract:Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm 2 /Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.
One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Ziyang Zhang,Guanyu Liu,Saifei Gou,Weida Hong,Haitao Jiang,Zhongying Xue,Miao Zhang,Wenzhong Bao,Ziao Tian,Zengfeng Di

DOI: https://doi.org/10.1002/adfm.202418615

IF: 19

2024-12-02

Advanced Functional Materials

Abstract:A reliable one‐step van der Waals integration technique is developed for centimeter‐scale transfer printing of multilayer top‐gate stacks. This technique enables the realization of superior electrical performance and threshold voltage control in MoS2 transistors. Depletion‐mode Al‐gated transistors and enhancement‐mode Au‐gated transistors are utilized to construct inverters, logic gates, static random‐access memory, and ring oscillators, demonstrating the functionality of multi‐threshold 2D circuits. Transition‐metal dichalcogenides (TMDs), as atomically thin semiconductors, have shown immense promise for next‐generation electronics due to their high mobility and potential for creating van der Waals heterostructures. However, precise control of the threshold voltage (Vth) in field‐effect transistors (FETs) remains a significant challenge, impeding the development of 2D material circuits with tailored electronic functions. Herein, a graphene‐assisted one‐step van der Waals integration technique is presented for fabricating multi‐threshold 2D functional circuits. Graphene's unique property of having a surface without dangling bonds is utilized as an intermediary layer, allowing for the transfer of electrodes with various work functions and high‐κ dielectric layers onto 2D channel materials in a single step. This technique has successfully produced Al‐gated MoS2 FETs with a Vth of −0.2 V and Au‐gated MoS2 FETs with a Vth of 1.9 V. This precision enables the development of functional devices such as rail‐to‐rail inverters with large noise margins. Furthermore, more complex multi‐threshold 2D circuits are achieved, including basic logic gates (NOT, NAND, NOR), six‐transistor static random‐access memory (6T‐SRAM), and ring oscillators (RO). This work showcases a scalable and effective strategy for threshold voltage engineering in 2D material‐based circuits, paving the way for sophisticated electronic and optoelectronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Wafer-scale and universal van der Waals metal semiconductor contact

Lingan Kong,Ruixia Wu,Yang Chen,Ying Huangfu,Liting Liu,Wei Li,Donglin Lu,Quanyang Tao,Wenjing Song,Wanying Li,Zheyi Lu,Xiao Liu,Yunxin Li,Zhiwei Li,Wei Tong,Shuimei Ding,Songlong Liu,Likuan Ma,Liwang Ren,Yiliu Wang,Lei Liao,Xidong Duan,Yuan Liu

DOI: https://doi.org/10.1038/s41467-023-36715-6

IF: 16.6

2023-02-24

Nature Communications

Abstract:Van der Waals (vdW) metallic contacts have been demonstrated as a promising approach to reduce the contact resistance and minimize the Fermi level pinning at the interface of two-dimensional (2D) semiconductors. However, only a limited number of metals can be mechanically peeled and laminated to fabricate vdW contacts, and the required manual transfer process is not scalable. Here, we report a wafer-scale and universal vdW metal integration strategy readily applicable to a wide range of metals and semiconductors. By utilizing a thermally decomposable polymer as the buffer layer, different metals were directly deposited without damaging the underlying 2D semiconductor channels. The polymer buffer could be dry-removed through thermal annealing. With this technique, various metals could be vdW integrated as the contact of 2D transistors, including Ag, Al, Ti, Cr, Ni, Cu, Co, Au, Pd. Finally, we demonstrate that this vdW integration strategy can be extended to bulk semiconductors with reduced Fermi level pinning effect.

multidisciplinary sciences
Hybrid van der Waals heterojunction based on two-dimensional materials

Cuicui Sun,Meili Qi

DOI: https://doi.org/10.1088/1742-6596/2109/1/012012

2021-11-01

Journal of Physics: Conference Series

Abstract:Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.

Breaking the limitation of van der Waals integration

Van der Waals integration before and beyond two-dimensional materials

A van der Waals pn heterojunction with organic/inorganic semiconductors

Van der Waals integration: Enables quantum explorations and innovative devices

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals (Adv. Mater. 7/2022)

Mixed‐Dimensional Van Der Waals Engineering for Charge Transfer Enables Wafer‐Level Flexible Electronics

Integrating spin-based technologies with atomically controlled van der Waals interfaces

Devices and Applications of Van Der Waals Heterostructures

Pattern Transfer for Van Der Waals Integration

Allying nanophotonic structures with two-dimensional van der Waals materials

Functionalizing nanophotonic structures with 2D van der Waals materials

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Recent Advances in 1D Nanostructure Assembly and Direct Integration Methods for Device Applications

Mixed-dimensional van der Waals heterostructures: Synthesis, properties, and applications

Photonic van der Waals integration from 2D materials to 3D nanomembranes

Van Der Waals Nanomesh Electronics on Arbitrary Surfaces

One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Wafer-scale and universal van der Waals metal semiconductor contact

Hybrid van der Waals heterojunction based on two-dimensional materials